MJE172G - Даташиты. Аналоги. Основные параметры

MJE170, MJE171, MJE172 (PNP), MJE180, MJE181, MJE182 (NPN) Complementary Plastic Silicon Power Transistors http //onsemi.com The MJE170/180 series is designed for low power audio amplifier and low current, high speed switching applications. 3 AMPERES Features POWER TRANSISTORS Collector-Emitter Sustaining Voltage - COMPLEMENTARY SILICON VCEO(sus) = 40 Vdc - MJE170, MJE180 = 60

MJE170G, MJE171G, MJE172G (PNP), MJE180G, MJE181G, MJE182G (NPN) Complementary Plastic Silicon Power Transistors http //onsemi.com The MJE170/180 series is designed for low power audio amplifier and low current, high speed switching applications. 3 AMPERES Features POWER TRANSISTORS High DC Current Gain COMPLEMENTARY SILICON High Current-Gain - Bandwidth Product 40 - 60 -

MJE172 MJE182 COMPLEMENTARY SILICON POWER TRANSISTORS SGS-THOMSON PREFERRED SALESTYPES COMPLEMENTARY PNP - NPN DEVICES DESCRIPTION The MJE172 (PNP type) and MJE182 (NPN type) are silicon epitaxial planar, complementary transistors in Jedec SOT-32 plastic package, they are designed for low power audio amplifier and low current, high speed switching applications. 1 2 3 SOT-3

MJE172 MJE182 COMPLEMENTARY SILICON POWER TRANSISTORS STMicroelectronics PREFERRED SALESTYPES COMPLEMENTARY PNP - NPN DEVICES DESCRIPTION The MJE172 (PNP type) and MJE182 (NPN type) are silicon Epitaxial Planar, complementary transistors in Jedec SOT-32 plastic package. They are designed for low power audio amplifier 1 2 and low current, high speed switching 3 applicatio

MJE170/171/172 Low Power Audio Amplifier Low Current, High Speed Switching Applications TO-126 1 1. Emitter 2.Collector 3.Base PNP Epitaxial Silicon Transistor Absolute Maximum Ratings TC=25 C unless otherwise noted Symbol Parameter Value Units VCBO Collector-Base Voltage MJE170 - 60 V MJE171 - 80 V MJE172 - 100 V VCEO Collector-Emitter Voltage MJE170 - 40 V MJE171 - 60

MJE170, MJE171, MJE172 (PNP), MJE180, MJE181, MJE182 (NPN) Preferred Device Complementary Plastic Silicon Power Transistors http //onsemi.com The MJE170/180 series is designed for low power audio amplifier and low current, high speed switching applications. 3 AMPERES Features POWER TRANSISTORS Collector-Emitter Sustaining Voltage - COMPLEMENTARY SILICON VCEO(sus) = 40 Vdc - M

Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com Please note As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductor s system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

MJE170 / MJE171 / MJE172 PNP General Purpose Transistor Elektronische Bauelemente RoHS Compliant Product TO-126 A suffix of -C specifies halogen and lead free FEATURES Low frequency amplifier Emitter Collector Low current Base High speed switching applications A B E F C N H L M K D J G Millimeter Millimeter REF. REF. Min. Max. M

INCHANGE Semiconductor isc Product Specification isc Silicon PNP Power Transistor MJE172 DESCRIPTION Collector Emitter Sustaining Voltage VCEO(SUS) = -80 V DC Current Gain hFE = 30(Min) @ IC= -0.5 A = 12(Min) @ IC= -1.5 A Complement to Type MJE182 APPLICATIONS Low power audio amplifier Low current high speed switching applications ABSOLUTE MAXIMUM R