MJE210G Datasheet. Equivalente

 ..1. Size:164K  onsemi
 mje200g mje210g.pdf

MJE200G (NPN), MJE210G (PNP) Complementary Silicon Power Plastic Transistors These devices are designed for low voltage, low-power, high-gain audio amplifier applications. http //onsemi.com Features 5.0 AMPERES High DC Current Gain POWER TRANSISTORS Low Collector-Emitter Saturation Voltage COMPLEMENTARY SILICON High Current-Gain - Bandwidth Product Annular Construc

 ..2. Size:115K  onsemi
 mje210g.pdf

MJE200 - NPN, MJE210 - PNP Preferred Device Complementary Silicon Power Plastic Transistors These devices are designed for low voltage, low-power, high-gain audio amplifier applications. http //onsemi.com Features 5.0 AMPERES Collector-Emitter Sustaining Voltage - POWER TRANSISTORS VCEO(sus) = 25 Vdc (Min) @ IC = 10 mAdc High DC Current Gain - COMPLEMENTARY SILICON hFE

 8.1. Size:63K  st
 mje210.pdf

MJE210 SILICON PNP TRANSISTOR SGS-THOMSON PREFERRED SALESTYPE PNP TRANSISTOR DESCRIPTION The MJE210 is a silicon epitaxial-base PNP transistor in Jedec SOT-32 plastic package, designed for low voltage, low power, high gain aydio amplifier applications. 1 2 3 SOT-32 INTERNAL SCHEMATIC DIAGRAM ABSOLUTE MAXIMUM RATINGS Symbol Parameter Value Unit VCBO Collector-Base Voltage (IE

 8.2. Size:53K  st
 mje210 2.pdf

MJE210 SILICON PNP TRANSISTOR STMicroelectronics PREFERRED SALESTYPE PNP TRANSISTOR DESCRIPTION The MJE210 is a silicon Epitaxial-Base PNP transistor in Jedec SOT-32 plastic package, designed for low voltage, low power, high gain audio amplifier applications. 1 2 3 SOT-32 INTERNAL SCHEMATIC DIAGRAM ABSOLUTE MAXIMUM RATINGS Symbol Parameter Value Unit VCBO Collector-Base

 8.3. Size:41K  fairchild semi
 mje210.pdf

MJE210 Feature Low Collector-Emitter Saturation Voltage High Current Gain Bandwidth Product fT=65MHz@IC= -100mA (Min.) Complement to MJE200 TO-126 1 1. Emitter 2.Collector 3.Base PNP Epitaxial Silicon Transistor Absolute Maximum Ratings TC=25 C unless otherwise noted Symbol Parameter Value Units VCBO Collector-Base Voltage - 40 V VCEO Collector-Emitter Voltage - 2

 8.4. Size:115K  onsemi
 mje200 mje210.pdf

MJE200 - NPN, MJE210 - PNP Preferred Device Complementary Silicon Power Plastic Transistors These devices are designed for low voltage, low-power, high-gain audio amplifier applications. http //onsemi.com Features 5.0 AMPERES Collector-Emitter Sustaining Voltage - POWER TRANSISTORS VCEO(sus) = 25 Vdc (Min) @ IC = 10 mAdc High DC Current Gain - COMPLEMENTARY SILICON hFE

 8.5. Size:115K  onsemi
 mje210t.pdf

MJE200 - NPN, MJE210 - PNP Preferred Device Complementary Silicon Power Plastic Transistors These devices are designed for low voltage, low-power, high-gain audio amplifier applications. http //onsemi.com Features 5.0 AMPERES Collector-Emitter Sustaining Voltage - POWER TRANSISTORS VCEO(sus) = 25 Vdc (Min) @ IC = 10 mAdc High DC Current Gain - COMPLEMENTARY SILICON hFE