Справочник транзисторов. MJE210G

 

Биполярный транзистор MJE210G Даташит. Аналоги


   Наименование производителя: MJE210G
   Маркировка: JE210
   Тип материала: Si
   Полярность: PNP
   Максимальная рассеиваемая мощность (Pc): 15 W
   Макcимально допустимое напряжение коллектор-база (Ucb): 25 V
   Макcимально допустимое напряжение коллектор-эмиттер (Uce): 40 V
   Макcимально допустимое напряжение эмиттер-база (Ueb): 8 V
   Макcимальный постоянный ток коллектора (Ic): 5 A
   Предельная температура PN-перехода (Tj): 150 °C
   Граничная частота коэффициента передачи тока (ft): 65 MHz
   Ёмкость коллекторного перехода (Cc): 120 pf
   Статический коэффициент передачи тока (hfe): 45
   Корпус транзистора: TO126
 

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MJE210G Datasheet (PDF)

 ..1. Size:164K  onsemi
 mje200g mje210g.pdf pdf_icon

MJE210G

MJE200G (NPN),MJE210G (PNP)Complementary SiliconPower Plastic TransistorsThese devices are designed for low voltage, low-power, high-gainaudio amplifier applications.http://onsemi.comFeatures5.0 AMPERES High DC Current GainPOWER TRANSISTORS Low Collector-Emitter Saturation VoltageCOMPLEMENTARY SILICON High Current-Gain - Bandwidth Product Annular Construc

 ..2. Size:115K  onsemi
 mje210g.pdf pdf_icon

MJE210G

MJE200 - NPN,MJE210 - PNPPreferred Device Complementary SiliconPower Plastic TransistorsThese devices are designed for low voltage, low-power, high-gainaudio amplifier applications.http://onsemi.comFeatures5.0 AMPERES Collector-Emitter Sustaining Voltage -POWER TRANSISTORSVCEO(sus) = 25 Vdc (Min) @ IC = 10 mAdc High DC Current Gain -COMPLEMENTARY SILICONhFE

 8.1. Size:63K  st
 mje210.pdf pdf_icon

MJE210G

MJE210SILICON PNP TRANSISTOR SGS-THOMSON PREFERRED SALESTYPE PNP TRANSISTORDESCRIPTION The MJE210 is a silicon epitaxial-base PNPtransistor in Jedec SOT-32 plastic package,designed for low voltage, low power, high gainaydio amplifier applications.123SOT-32INTERNAL SCHEMATIC DIAGRAMABSOLUTE MAXIMUM RATINGSSymbol Parameter Value UnitVCBO Collector-Base Voltage (IE

 8.2. Size:53K  st
 mje210 2.pdf pdf_icon

MJE210G

MJE210SILICON PNP TRANSISTOR STMicroelectronics PREFERREDSALESTYPE PNP TRANSISTORDESCRIPTION The MJE210 is a silicon Epitaxial-Base PNPtransistor in Jedec SOT-32 plastic package,designed for low voltage, low power, high gainaudio amplifier applications.123SOT-32INTERNAL SCHEMATIC DIAGRAMABSOLUTE MAXIMUM RATINGSSymbol Parameter Value UnitVCBO Collector-Base

ПОКАЗАТЬ ЕЩЁ

Другие транзисторы... MJE171G , MJE172G , MJE18004G , MJE18008G , MJE180G , MJE181G , MJE182G , MJE200G , D209L , MJE210T , MJE243G , MJE253G , MJE270G , MJE271G , MJE2955A , MJE2955TG , MJE3055A .

History: MMBT589 | SFT131

 

 
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