MJE210T Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: MJE210T  📄📄 

Código: JE210

Material: Si

Polaridad de transistor: PNP

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pc): 15 W

Tensión colector-base (Vcb): 25 V

Tensión colector-emisor (Vce): 40 V

Tensión emisor-base (Veb): 8 V

Corriente del colector DC máxima (Ic): 5 A

Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Transición de frecuencia (fT): 65 MHz

Capacitancia de salida (Cc): 120 pF

Ganancia de corriente contínua (hFE): 45

Encapsulados: TO126

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MJE210T datasheet

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 mje210t.pdf pdf_icon

MJE210T

MJE200 - NPN, MJE210 - PNP Preferred Device Complementary Silicon Power Plastic Transistors These devices are designed for low voltage, low-power, high-gain audio amplifier applications. http //onsemi.com Features 5.0 AMPERES Collector-Emitter Sustaining Voltage - POWER TRANSISTORS VCEO(sus) = 25 Vdc (Min) @ IC = 10 mAdc High DC Current Gain - COMPLEMENTARY SILICON hFE

 8.1. Size:63K  st
 mje210.pdf pdf_icon

MJE210T

MJE210 SILICON PNP TRANSISTOR SGS-THOMSON PREFERRED SALESTYPE PNP TRANSISTOR DESCRIPTION The MJE210 is a silicon epitaxial-base PNP transistor in Jedec SOT-32 plastic package, designed for low voltage, low power, high gain aydio amplifier applications. 1 2 3 SOT-32 INTERNAL SCHEMATIC DIAGRAM ABSOLUTE MAXIMUM RATINGS Symbol Parameter Value Unit VCBO Collector-Base Voltage (IE

 8.2. Size:53K  st
 mje210 2.pdf pdf_icon

MJE210T

MJE210 SILICON PNP TRANSISTOR STMicroelectronics PREFERRED SALESTYPE PNP TRANSISTOR DESCRIPTION The MJE210 is a silicon Epitaxial-Base PNP transistor in Jedec SOT-32 plastic package, designed for low voltage, low power, high gain audio amplifier applications. 1 2 3 SOT-32 INTERNAL SCHEMATIC DIAGRAM ABSOLUTE MAXIMUM RATINGS Symbol Parameter Value Unit VCBO Collector-Base

 8.3. Size:41K  fairchild semi
 mje210.pdf pdf_icon

MJE210T

MJE210 Feature Low Collector-Emitter Saturation Voltage High Current Gain Bandwidth Product fT=65MHz@IC= -100mA (Min.) Complement to MJE200 TO-126 1 1. Emitter 2.Collector 3.Base PNP Epitaxial Silicon Transistor Absolute Maximum Ratings TC=25 C unless otherwise noted Symbol Parameter Value Units VCBO Collector-Base Voltage - 40 V VCEO Collector-Emitter Voltage - 2

MOSTRAR MÁS

Otros transistores... MJE172G, MJE18004G, MJE18008G, MJE180G, MJE181G, MJE182G, MJE200G, MJE210G, 9014, MJE243G, MJE253G, MJE270G, MJE271G, MJE2955A, MJE2955TG, MJE3055A, MJE3055TG