All Transistors. MJE210T Datasheet

 

MJE210T Datasheet and Replacement


   Type Designator: MJE210T
   SMD Transistor Code: JE210
   Material of Transistor: Si
   Polarity: PNP
   Maximum Collector Power Dissipation (Pc): 15 W
   Maximum Collector-Base Voltage |Vcb|: 25 V
   Maximum Collector-Emitter Voltage |Vce|: 40 V
   Maximum Emitter-Base Voltage |Veb|: 8 V
   Maximum Collector Current |Ic max|: 5 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Transition Frequency (ft): 65 MHz
   Collector Capacitance (Cc): 120 pF
   Forward Current Transfer Ratio (hFE), MIN: 45
   Noise Figure, dB: -
   Package: TO126
 

 MJE210T Substitution

   - BJT ⓘ Cross-Reference Search

   

MJE210T Datasheet (PDF)

 ..1. Size:115K  onsemi
 mje210t.pdf pdf_icon

MJE210T

MJE200 - NPN,MJE210 - PNPPreferred Device Complementary SiliconPower Plastic TransistorsThese devices are designed for low voltage, low-power, high-gainaudio amplifier applications.http://onsemi.comFeatures5.0 AMPERES Collector-Emitter Sustaining Voltage -POWER TRANSISTORSVCEO(sus) = 25 Vdc (Min) @ IC = 10 mAdc High DC Current Gain -COMPLEMENTARY SILICONhFE

 8.1. Size:63K  st
 mje210.pdf pdf_icon

MJE210T

MJE210SILICON PNP TRANSISTOR SGS-THOMSON PREFERRED SALESTYPE PNP TRANSISTORDESCRIPTION The MJE210 is a silicon epitaxial-base PNPtransistor in Jedec SOT-32 plastic package,designed for low voltage, low power, high gainaydio amplifier applications.123SOT-32INTERNAL SCHEMATIC DIAGRAMABSOLUTE MAXIMUM RATINGSSymbol Parameter Value UnitVCBO Collector-Base Voltage (IE

 8.2. Size:53K  st
 mje210 2.pdf pdf_icon

MJE210T

MJE210SILICON PNP TRANSISTOR STMicroelectronics PREFERREDSALESTYPE PNP TRANSISTORDESCRIPTION The MJE210 is a silicon Epitaxial-Base PNPtransistor in Jedec SOT-32 plastic package,designed for low voltage, low power, high gainaudio amplifier applications.123SOT-32INTERNAL SCHEMATIC DIAGRAMABSOLUTE MAXIMUM RATINGSSymbol Parameter Value UnitVCBO Collector-Base

 8.3. Size:41K  fairchild semi
 mje210.pdf pdf_icon

MJE210T

MJE210Feature Low Collector-Emitter Saturation Voltage High Current Gain Bandwidth Product : fT=65MHz@IC= -100mA (Min.) Complement to MJE200TO-12611. Emitter 2.Collector 3.BasePNP Epitaxial Silicon TransistorAbsolute Maximum Ratings TC=25C unless otherwise notedSymbol Parameter Value Units VCBO Collector-Base Voltage - 40 V VCEO Collector-Emitter Voltage - 2

SHOW MORE

Datasheet: MJE172G , MJE18004G , MJE18008G , MJE180G , MJE181G , MJE182G , MJE200G , MJE210G , C3198 , MJE243G , MJE253G , MJE270G , MJE271G , MJE2955A , MJE2955TG , MJE3055A , MJE3055TG .

History: ASZ20N | TIP75A | ASZ1017 | PDTA143ZM | MJF122 | PDTA143TT | 2SA625

Keywords - MJE210T transistor datasheet

 MJE210T cross reference
 MJE210T equivalent finder
 MJE210T lookup
 MJE210T substitution
 MJE210T replacement

 

 
Back to Top

 


 
.