MJE253G Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: MJE253G  📄📄 

Código: JE253

Material: Si

Polaridad de transistor: PNP

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pc): 15 W

Tensión colector-base (Vcb): 100 V

Tensión colector-emisor (Vce): 100 V

Tensión emisor-base (Veb): 7 V

Corriente del colector DC máxima (Ic): 4 A

Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Transición de frecuencia (fT): 40 MHz

Capacitancia de salida (Cc): 50 pF

Ganancia de corriente contínua (hFE): 40

Encapsulados: TO126

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MJE253G datasheet

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MJE253G

MJE243 - NPN, MJE253 - PNP Complementary Silicon Power Plastic Transistors These devices are designed for low power audio amplifier and low-current, high-speed switching applications. http //onsemi.com Features 4.0 AMPERES High Collector-Emitter Sustaining Voltage - POWER TRANSISTORS VCEO(sus) = 100 Vdc (Min) High DC Current Gain @ IC = 200 mAdc COMPLEMENTARY SILICON hFE =

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MJE253G

 8.1. Size:187K  onsemi
mje243 mje253.pdf pdf_icon

MJE253G

MJE243 - NPN, MJE253 - PNP Complementary Silicon Power Plastic Transistors These devices are designed for low power audio amplifier and low-current, high-speed switching applications. http //onsemi.com Features 4.0 AMPERES High Collector-Emitter Sustaining Voltage - POWER TRANSISTORS VCEO(sus) = 100 Vdc (Min) High DC Current Gain @ IC = 200 mAdc COMPLEMENTARY SILICON hFE =

 8.2. Size:203K  cdil
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MJE253G

Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company NPN EPITAXIAL SILICON POWER TRANSISTOR MJE243 TO-126 Plastic Package E C B Complementary MJE253 Designed for Low Power Audio Amplifier and Low-Current, High-Speed Switching Applications ABSOLUTE MAXIMUM RATINGS DESCRIPTION SYMBOL Value UNIT Collector Base Voltage VCBO 100 V Collector Emitter

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