MJE271G . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: MJE271G
Código: JE271
Material: Si
Polaridad de transistor: PNP
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 15 W
Tensión colector-base (Vcb): 100 V
Tensión colector-emisor (Vce): 100 V
Tensión emisor-base (Veb): 5 V
Corriente del colector DC máxima (Ic): 2 A
Temperatura operativa máxima (Tj): 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Transición de frecuencia (ft): 6 MHz
Ganancia de corriente contínua (hfe): 500
Paquete / Cubierta: TO126
Búsqueda de reemplazo de transistor bipolar MJE271G
MJE271G Datasheet (PDF)
mje271g.pdf
MJE270 (NPN),MJE271 (PNP)Complementary SiliconPower TransistorsFeatureshttp://onsemi.com High Safe Operating AreaIS/B @ 40 V, 1.0 s = 0.375 A 2.0 AMPERE Collector-Emitter Sustaining Voltage COMPLEMENTARYVCEO(sus) = 100 Vdc (Min)POWER DARLINGTON High DC Current GainTRANSISTORShFE @ 120 mA, 10 V = 1500 (Min)100 VOLTS, 15 WATTS Pb-Free Packages are Availab
mje270g mje271g.pdf
MJE270G (NPN),MJE271G (PNP)Complementary SiliconPower TransistorsFeatureshttp://onsemi.com High Safe Operating AreaIS/B @ 40 V, 1.0 s = 0.375 A 2.0 AMPERE Collector-Emitter Sustaining Voltage COMPLEMENTARYVCEO(sus) = 100 Vdc (Min)POWER DARLINGTON High DC Current GainTRANSISTORShFE @ 120 mA, 10 V = 1500 (Min)100 VOLTS, 15 WATTS These Devices are Pb-Free
mje270 mje271.pdf
MJE270 (NPN),MJE271 (PNP)Complementary SiliconPower TransistorsFeatureshttp://onsemi.com High Safe Operating AreaIS/B @ 40 V, 1.0 s = 0.375 A 2.0 AMPERE Collector-Emitter Sustaining Voltage COMPLEMENTARYVCEO(sus) = 100 Vdc (Min)POWER DARLINGTON High DC Current GainTRANSISTORShFE @ 120 mA, 10 V = 1500 (Min)100 VOLTS, 15 WATTS Pb-Free Packages are Availab
mje270re.pdf
Order this documentMOTOROLAby MJE270/DSEMICONDUCTOR TECHNICAL DATANPNMJE270Complementary Silicon PowerPNPMJE271Transistors. . . designed specifically for use with the MC3419 SolidState Subscriber LoopInterface Circuit (SLIC). High Safe Operating Area 2.0 AMPEREIS/B @ 40 V, 1.0 s = 0.375 A TO126 COMPLEMENTARY CollectorEmitter Sustaining Voltage POWE
mje270g.pdf
MJE270 (NPN),MJE271 (PNP)Complementary SiliconPower TransistorsFeatureshttp://onsemi.com High Safe Operating AreaIS/B @ 40 V, 1.0 s = 0.375 A 2.0 AMPERE Collector-Emitter Sustaining Voltage COMPLEMENTARYVCEO(sus) = 100 Vdc (Min)POWER DARLINGTON High DC Current GainTRANSISTORShFE @ 120 mA, 10 V = 1500 (Min)100 VOLTS, 15 WATTS Pb-Free Packages are Availab
mje270 71.pdf
Continental Device India LimitedAn ISO/TS 16949, ISO 9001 and ISO 14001 Certified CompanyTO-126 (SOT-32) Plastic Package MJE270, MJE271MJE270 NPN PLASTIC POWER TRANSISTORMJE271 PNP PLASTIC POWER TRANSISTORMedium Power Darlingtons for Linear and Switching ApplicationsPIN CONFIGURATION1. EMITTER2. COLLECTOR3. BASE123ALL DIMENSIONS IN MMABSOLUTE MAXIMUM RATINGSCollect
Otros transistores... 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .
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