All Transistors. MJE271G Datasheet

 

MJE271G Datasheet, Equivalent, Cross Reference Search


   Type Designator: MJE271G
   SMD Transistor Code: JE271
   Material of Transistor: Si
   Polarity: PNP
   Maximum Collector Power Dissipation (Pc): 15 W
   Maximum Collector-Base Voltage |Vcb|: 100 V
   Maximum Collector-Emitter Voltage |Vce|: 100 V
   Maximum Emitter-Base Voltage |Veb|: 5 V
   Maximum Collector Current |Ic max|: 2 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Transition Frequency (ft): 6 MHz
   Forward Current Transfer Ratio (hFE), MIN: 500
   Noise Figure, dB: -
   Package: TO126

 MJE271G Transistor Equivalent Substitute - Cross-Reference Search

   

MJE271G Datasheet (PDF)

 ..1. Size:101K  onsemi
mje271g.pdf

MJE271G
MJE271G

MJE270 (NPN),MJE271 (PNP)Complementary SiliconPower TransistorsFeatureshttp://onsemi.com High Safe Operating AreaIS/B @ 40 V, 1.0 s = 0.375 A 2.0 AMPERE Collector-Emitter Sustaining Voltage COMPLEMENTARYVCEO(sus) = 100 Vdc (Min)POWER DARLINGTON High DC Current GainTRANSISTORShFE @ 120 mA, 10 V = 1500 (Min)100 VOLTS, 15 WATTS Pb-Free Packages are Availab

 ..2. Size:84K  onsemi
mje270g mje271g.pdf

MJE271G
MJE271G

MJE270G (NPN),MJE271G (PNP)Complementary SiliconPower TransistorsFeatureshttp://onsemi.com High Safe Operating AreaIS/B @ 40 V, 1.0 s = 0.375 A 2.0 AMPERE Collector-Emitter Sustaining Voltage COMPLEMENTARYVCEO(sus) = 100 Vdc (Min)POWER DARLINGTON High DC Current GainTRANSISTORShFE @ 120 mA, 10 V = 1500 (Min)100 VOLTS, 15 WATTS These Devices are Pb-Free

 8.1. Size:101K  onsemi
mje270 mje271.pdf

MJE271G
MJE271G

MJE270 (NPN),MJE271 (PNP)Complementary SiliconPower TransistorsFeatureshttp://onsemi.com High Safe Operating AreaIS/B @ 40 V, 1.0 s = 0.375 A 2.0 AMPERE Collector-Emitter Sustaining Voltage COMPLEMENTARYVCEO(sus) = 100 Vdc (Min)POWER DARLINGTON High DC Current GainTRANSISTORShFE @ 120 mA, 10 V = 1500 (Min)100 VOLTS, 15 WATTS Pb-Free Packages are Availab

 9.1. Size:109K  motorola
mje270re.pdf

MJE271G
MJE271G

Order this documentMOTOROLAby MJE270/DSEMICONDUCTOR TECHNICAL DATANPNMJE270Complementary Silicon PowerPNPMJE271Transistors. . . designed specifically for use with the MC3419 SolidState Subscriber LoopInterface Circuit (SLIC). High Safe Operating Area 2.0 AMPEREIS/B @ 40 V, 1.0 s = 0.375 A TO126 COMPLEMENTARY CollectorEmitter Sustaining Voltage POWE

 9.2. Size:101K  onsemi
mje270g.pdf

MJE271G
MJE271G

MJE270 (NPN),MJE271 (PNP)Complementary SiliconPower TransistorsFeatureshttp://onsemi.com High Safe Operating AreaIS/B @ 40 V, 1.0 s = 0.375 A 2.0 AMPERE Collector-Emitter Sustaining Voltage COMPLEMENTARYVCEO(sus) = 100 Vdc (Min)POWER DARLINGTON High DC Current GainTRANSISTORShFE @ 120 mA, 10 V = 1500 (Min)100 VOLTS, 15 WATTS Pb-Free Packages are Availab

 9.3. Size:520K  cdil
mje270 71.pdf

MJE271G
MJE271G

Continental Device India LimitedAn ISO/TS 16949, ISO 9001 and ISO 14001 Certified CompanyTO-126 (SOT-32) Plastic Package MJE270, MJE271MJE270 NPN PLASTIC POWER TRANSISTORMJE271 PNP PLASTIC POWER TRANSISTORMedium Power Darlingtons for Linear and Switching ApplicationsPIN CONFIGURATION1. EMITTER2. COLLECTOR3. BASE123ALL DIMENSIONS IN MMABSOLUTE MAXIMUM RATINGSCollect

Datasheet: 2SA1803O , 2SA1803R , 2SA1804 , 2SA1804O , 2SA1804R , 2SA1805 , 2SA1805O , 2SA1805R , D209L , 2SA181 , 2SA1810 , 2SA1810B , 2SA1810C , 2SA1811 , 2SA1815 , 2SA1815-3 , 2SA1815-4 .

 

 
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