MJE5850G . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: MJE5850G
Código: MJE5850
Material: Si
Polaridad de transistor: PNP
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 80 W
Tensión colector-emisor (Vce): 300 V
Tensión emisor-base (Veb): 6 V
Corriente del colector DC máxima (Ic): 8 A
Temperatura operativa máxima (Tj): 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Capacitancia de salida (Cc): 270 pF
Ganancia de corriente contínua (hfe): 5
Paquete / Cubierta: TO220AB
Búsqueda de reemplazo de transistor bipolar MJE5850G
MJE5850G Datasheet (PDF)
mje5850g.pdf
MJE5850, MJE5851,MJE5852SWITCHMODE SeriesPNP Silicon PowerTransistorshttp://onsemi.comThe MJE5850, MJE5851 and the MJE5852 transistors are designedfor high-voltage, high-speed, power switching in inductive circuits8 AMPEREwhere fall time is critical. They are particularly suited for line operatedSWITCHMODE applications.PCP SILICONPOWER TRANSISTORSFeatures300-350-400
mje5850r.pdf
Order this documentMOTOROLAby MJE5850/DSEMICONDUCTOR TECHNICAL DATAMJE5850*MJE5851Designer's Data SheetMJE5852*SWITCHMODE Series*Motorola Preferred DevicePNP Silicon Power Transistors8 AMPEREThe MJE5850, MJE5851 and the MJE5852 transistors are designed for highvolt-PNP SILICONage, highspeed, power switching in inductive circuits where fall time is critic
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MJE5850, MJE5851,MJE5852Switch-mode Series PNPSilicon Power TransistorsThe MJE5850, MJE5851 and the MJE5852 transistors are designedfor high-voltage, high-speed, power switching in inductive circuitswww.onsemi.comwhere fall time is critical. They are particularly suited for line operatedswitch-mode applications.8 AMPEREFeaturesPCP SILICON Switching RegulatorsPOWER T
mje5852.pdf
MJE5852HIGH VOLTAGE PNP POWER TRANSISTOR STMicroelectronics PREFERREDSALESTYPE PNP TRANSISTOR HIGH VOLTAGE CAPABILITYAPPLICATIONS: SWITCHING REGULATORS MOTOR CONTROL INVERTERS 321DESCRIPTION The MJE5852 is manufactured using HighTO-220Voltage PNP Multi-Epitaxial technology for highswitching speed and high voltage capability.It is intended for use in hi
mje5851g.pdf
MJE5850, MJE5851,MJE5852SWITCHMODE SeriesPNP Silicon PowerTransistorshttp://onsemi.comThe MJE5850, MJE5851 and the MJE5852 transistors are designedfor high-voltage, high-speed, power switching in inductive circuits8 AMPEREwhere fall time is critical. They are particularly suited for line operatedSWITCHMODE applications.PCP SILICONPOWER TRANSISTORSFeatures300-350-400
mje5852g.pdf
MJE5850, MJE5851,MJE5852SWITCHMODE SeriesPNP Silicon PowerTransistorshttp://onsemi.comThe MJE5850, MJE5851 and the MJE5852 transistors are designedfor high-voltage, high-speed, power switching in inductive circuits8 AMPEREwhere fall time is critical. They are particularly suited for line operatedSWITCHMODE applications.PCP SILICONPOWER TRANSISTORSFeatures300-350-400
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