MJE5850G datasheet, аналоги, основные параметры
Наименование производителя: MJE5850G 📄📄
Маркировка: MJE5850
Тип материала: Si
Полярность: PNP
Предельные значения
Максимальная рассеиваемая мощность (Pc): 80 W
Макcимально допустимое напряжение коллектор-эмиттер (Uce): 300 V
Макcимально допустимое напряжение эмиттер-база (Ueb): 6 V
Макcимальный постоянный ток коллектора (Ic): 8 A
Предельная температура PN-перехода (Tj): 150 °C
Электрические характеристики
Ёмкость коллекторного перехода (Cc): 270 pf
Статический коэффициент передачи тока (hFE): 5
Корпус транзистора: TO220AB
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Аналоги (замена) для MJE5850G
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MJE5850G даташит
mje5850g.pdf
MJE5850, MJE5851, MJE5852 SWITCHMODE Series PNP Silicon Power Transistors http //onsemi.com The MJE5850, MJE5851 and the MJE5852 transistors are designed for high-voltage, high-speed, power switching in inductive circuits 8 AMPERE where fall time is critical. They are particularly suited for line operated SWITCHMODE applications. PCP SILICON POWER TRANSISTORS Features 300-350-400
mje5850r.pdf
Order this document MOTOROLA by MJE5850/D SEMICONDUCTOR TECHNICAL DATA MJE5850 * MJE5851 Designer's Data Sheet MJE5852 * SWITCHMODE Series *Motorola Preferred Device PNP Silicon Power Transistors 8 AMPERE The MJE5850, MJE5851 and the MJE5852 transistors are designed for high volt- PNP SILICON age, high speed, power switching in inductive circuits where fall time is critic
mje5850 mje5851 mje5852.pdf
MJE5850, MJE5851, MJE5852 Switch-mode Series PNP Silicon Power Transistors The MJE5850, MJE5851 and the MJE5852 transistors are designed for high-voltage, high-speed, power switching in inductive circuits www.onsemi.com where fall time is critical. They are particularly suited for line operated switch-mode applications. 8 AMPERE Features PCP SILICON Switching Regulators POWER T
mje5852.pdf
MJE5852 HIGH VOLTAGE PNP POWER TRANSISTOR STMicroelectronics PREFERRED SALESTYPE PNP TRANSISTOR HIGH VOLTAGE CAPABILITY APPLICATIONS SWITCHING REGULATORS MOTOR CONTROL INVERTERS 3 2 1 DESCRIPTION The MJE5852 is manufactured using High TO-220 Voltage PNP Multi-Epitaxial technology for high switching speed and high voltage capability. It is intended for use in hi
Другие транзисторы: MJE3439G, MJE344G, MJE371G, MJE4343G, MJE5730G, MJE5731AG, MJE5731G, MJE5742G, BC549, MJE5851G, MJE5852G, MJE6040T, MJE6041T, MJE6042T, MJE6043T, MJE6045T, MJE700G
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