MJE800G
. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: MJE800G
Código: JE800
Material: Si
Polaridad de transistor: NPN
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 40
W
Tensión colector-base (Vcb): 60
V
Tensión colector-emisor (Vce): 60
V
Tensión emisor-base (Veb): 5
V
Corriente del colector DC máxima (Ic): 4
A
Temperatura operativa máxima (Tj): 150
°C
CARACTERÍSTICAS ELÉCTRICAS
Ganancia de corriente contínua (hfe): 100
Paquete / Cubierta:
TO126
Búsqueda de reemplazo de transistor bipolar MJE800G
MJE800G
Datasheet (PDF)
..1. Size:126K onsemi
mje800g.pdf
MJE700, MJE702, MJE703(PNP) - MJE800, MJE802,MJE803 (NPN)Plastic DarlingtonComplementary Siliconhttp://onsemi.comPower TransistorsThese devices are designed for general-purpose amplifier and4.0 AMPERElow-speed switching applications.DARLINGTON POWERFeaturesTRANSISTORS High DC Current Gain - hFE = 2000 (Typ) @ IC COMPLEMENTARY SILICON= 2.0 Adc40 WATT Monolit
8.1. Size:51K fairchild semi
mje800.pdf
MJE800/801/802/803Monolithic Construction With Built-in Base-Emitter Resistors High DC Current Gain : hFE= 750 (Min.) @ IC= 1.5 and 2.0A DC Complement to MJE700/701/702/703TO-12611. Emitter 2.Collector 3.BaseNPN Epitaxial Silicon Darlington TransistorAbsolute Maximum Ratings TC=25C unless otherwise notedEquivalent CircuitCSymbol Parameter Value Units VCBO Coll
8.2. Size:212K inchange semiconductor
mje800t.pdf
isc Silicon NPN Darlington Power Transistor MJE800TDESCRIPTIONCollectorEmitter Breakdown Voltage: V = 60 V(BR)CEODC Current Gain: h = 750(Min) @ I = 1.5AFE C= 100(Min) @ I = 4ACComplement to Type MJE700TMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for general-purpose amplifier and low-speed
8.3. Size:118K inchange semiconductor
mje800 mje801 mje802 mje803.pdf
Inchange Semiconductor Product Specification Silicon NPN Power Transistors MJE800/801/802/803 DESCRIPTION With TO-126 package Complement to type MJE700/701/702/703 High DC current gain DARLINGTON APPLICATIONS Designed for generalpurpose amplifier and lowspeed switching applications PINNING (see Fig.2) PIN DESCRIPTION1 Emitter Collector;connected to
8.4. Size:214K inchange semiconductor
mje800.pdf
isc Silicon NPN Darlington Power Transistor MJE800DESCRIPTIONCollectorEmitter Breakdown Voltage: V = 60 V(BR)CEODC Current Gain: h = 750(Min) @ I = 1.5 AFE C= 100(Min) @ I = 4ACComplement to Type MJE700Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for general-purpose amplifier and low-speeds
Otros transistores... 2SA1801
, 2SA1802
, 2SA1802A
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, 2SA1804
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, 2SA1805R
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.