MJE800G - Даташиты. Аналоги. Основные параметры

MJE700, MJE702, MJE703 (PNP) - MJE800, MJE802, MJE803 (NPN) Plastic Darlington Complementary Silicon http //onsemi.com Power Transistors These devices are designed for general-purpose amplifier and 4.0 AMPERE low-speed switching applications. DARLINGTON POWER Features TRANSISTORS High DC Current Gain - hFE = 2000 (Typ) @ IC COMPLEMENTARY SILICON = 2.0 Adc 40 WATT Monolit

MJE800/801/802/803 Monolithic Construction With Built-in Base- Emitter Resistors High DC Current Gain hFE= 750 (Min.) @ IC= 1.5 and 2.0A DC Complement to MJE700/701/702/703 TO-126 1 1. Emitter 2.Collector 3.Base NPN Epitaxial Silicon Darlington Transistor Absolute Maximum Ratings TC=25 C unless otherwise noted Equivalent Circuit C Symbol Parameter Value Units VCBO Coll

isc Silicon NPN Darlington Power Transistor MJE800T DESCRIPTION Collector Emitter Breakdown Voltage V = 60 V (BR)CEO DC Current Gain h = 750(Min) @ I = 1.5A FE C = 100(Min) @ I = 4A C Complement to Type MJE700T Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for general-purpose amplifier and low-speed

Inchange Semiconductor Product Specification Silicon NPN Power Transistors MJE800/801/802/803 DESCRIPTION With TO-126 package Complement to type MJE700/701/702/703 High DC current gain DARLINGTON APPLICATIONS Designed for general purpose amplifier and low speed switching applications PINNING (see Fig.2) PIN DESCRIPTION 1 Emitter Collector;connected to

isc Silicon NPN Darlington Power Transistor MJE800 DESCRIPTION Collector Emitter Breakdown Voltage V = 60 V (BR)CEO DC Current Gain h = 750(Min) @ I = 1.5 A FE C = 100(Min) @ I = 4A C Complement to Type MJE700 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for general-purpose amplifier and low-speed s