MJF122G Todos los transistores

 

MJF122G . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: MJF122G
   Material: Si
   Polaridad de transistor: NPN

ESPECIFICACIONES MÁXIMAS


   Disipación total del dispositivo (Pc): 30 W
   Tensión colector-base (Vcb): 100 V
   Tensión colector-emisor (Vce): 100 V
   Tensión emisor-base (Veb): 5 V
   Corriente del colector DC máxima (Ic): 5 A
   Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   Capacitancia de salida (Cc): 200 pF
   Ganancia de corriente contínua (hfe): 1000
   Paquete / Cubierta: TO220F

 Búsqueda de reemplazo de transistor bipolar MJF122G

 

MJF122G Datasheet (PDF)

 ..1. Size:189K  inchange semiconductor
 mjf122g.pdf pdf_icon

MJF122G

SavantIC Semiconductor Product Specification Silicon NPN Power Transistors MJF122 DESCRIPTION With TO-220F package DARLINGTON High DC current gain Low collector saturation voltage Complement to type MJF127 APPLICATIONS Designed for general purpose amplifier and switching applications. PINNING PIN DESCRIPTION 1 Base 2 Collector 3 Emitter ABSOLUTE MAXI

 8.1. Size:267K  motorola
 mjf122 mjf127.pdf pdf_icon

MJF122G

 9.1. Size:150K  onsemi
 mjf127g.pdf pdf_icon

MJF122G

MJF122, MJF127 Complementary Power Darlingtons For Isolated Package Applications Designed for general-purpose amplifiers and switching http //onsemi.com applications, where the mounting surface of the device is required to be electrically isolated from the heatsink or chassis. COMPLEMENTARY SILICON Features POWER DARLINGTONS Electrically Similar to the Popular TIP122 and TIP127

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