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MJF122G Specs and Replacement


   Type Designator: MJF122G
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 30 W
   Maximum Collector-Base Voltage |Vcb|: 100 V
   Maximum Collector-Emitter Voltage |Vce|: 100 V
   Maximum Emitter-Base Voltage |Veb|: 5 V
   Maximum Collector Current |Ic max|: 5 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Collector Capacitance (Cc): 200 pF
   Forward Current Transfer Ratio (hFE), MIN: 1000
   Noise Figure, dB: -
   Package: TO220F

 MJF122G Transistor Equivalent Substitute - Cross-Reference Search

   

MJF122G detailed specifications

 ..1. Size:189K  inchange semiconductor
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MJF122G

SavantIC Semiconductor Product Specification Silicon NPN Power Transistors MJF122 DESCRIPTION With TO-220F package DARLINGTON High DC current gain Low collector saturation voltage Complement to type MJF127 APPLICATIONS Designed for general purpose amplifier and switching applications. PINNING PIN DESCRIPTION 1 Base 2 Collector 3 Emitter ABSOLUTE MAXI... See More ⇒

 8.1. Size:267K  motorola
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MJF122G

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 9.1. Size:150K  onsemi
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MJF122G

MJF122, MJF127 Complementary Power Darlingtons For Isolated Package Applications Designed for general-purpose amplifiers and switching http //onsemi.com applications, where the mounting surface of the device is required to be electrically isolated from the heatsink or chassis. COMPLEMENTARY SILICON Features POWER DARLINGTONS Electrically Similar to the Popular TIP122 and TIP127 ... See More ⇒

Detailed specifications: MJE6043T , MJE6045T , MJE700G , MJE702G , MJE703G , MJE800G , MJE802G , MJE803G , TIP32C , MJF127G , MJF13009 , MJF15030G , MJF15031G , MJF18004G , MJF18008G , MJF2955G , MJF3055G .

History: MJF15031G

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