MJF15031G Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: MJF15031G  📄📄 

Código: MJF15031

Material: Si

Polaridad de transistor: PNP

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pc): 36 W

Tensión colector-base (Vcb): 150 V

Tensión colector-emisor (Vce): 150 V

Tensión emisor-base (Veb): 5 V

Corriente del colector DC máxima (Ic): 8 A

Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Transición de frecuencia (fT): 30 MHz

Ganancia de corriente contínua (hFE): 40

Encapsulados: TO220

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MJF15031G datasheet

 ..1. Size:134K  onsemi
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MJF15031G

MJF15030 (NPN), MJF15031 (PNP) Complementary Power Transistors For Isolated Package Applications Designed for general-purpose amplifier and switching applications, http //onsemi.com where the mounting surface of the device is required to be electrically isolated from the heatsink or chassis. COMPLEMENTARY SILICON Features POWER TRANSISTORS Electrically Similar to the Popular MJE

 6.1. Size:246K  motorola
 mjf15030 mjf15031.pdf pdf_icon

MJF15031G

Order this document MOTOROLA by MJF15030/D SEMICONDUCTOR TECHNICAL DATA NPN MJF15030 Complementary Power PNP MJF15031 Transistors For Isolated Package Applications Designed for general purpose amplifier and switching applications, where the COMPLEMENTARY mounting surface of the device is required to be electrically isolated from the heatsink SILICON or chassis. POWER TRANSISTO

 6.2. Size:128K  onsemi
 mjf15030 mjf15031.pdf pdf_icon

MJF15031G

MJF15030 (NPN), MJF15031 (PNP) Complementary Power Transistors For Isolated Package Applications Designed for general-purpose amplifier and switching applications, http //onsemi.com where the mounting surface of the device is required to be electrically isolated from the heatsink or chassis. COMPLEMENTARY SILICON Features POWER TRANSISTORS Electrically Similar to the Popular MJE

 6.3. Size:209K  inchange semiconductor
 mjf15031.pdf pdf_icon

MJF15031G

isc Silicon PNP Power Transistor MJF15031 DESCRIPTION Collector-Emitter Sustaining Voltage- V = 150V(Min) CEO(SUS) High DC current gain - h = 40 (Min) @I = 3.0 A FE C h = 20 (Min) @I = 4.0 A FE C Complement to Type MJF15030 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for general-purpose amplifier and swit

MOSTRAR MÁS

Otros transistores... MJE703G, MJE800G, MJE802G, MJE803G, MJF122G, MJF127G, MJF13009, MJF15030G, TIP120, MJF18004G, MJF18008G, MJF2955G, MJF3055G, MJF31CG, MJF32CG, MJF44H11G, MJF45H11G