Справочник транзисторов. MJF15031G

 

Биполярный транзистор MJF15031G - описание производителя. Основные параметры. Даташиты.


   Наименование производителя: MJF15031G
   Маркировка: MJF15031
   Тип материала: Si
   Полярность: PNP
   Максимальная рассеиваемая мощность (Pc): 36 W
   Макcимально допустимое напряжение коллектор-база (Ucb): 150 V
   Макcимально допустимое напряжение коллектор-эмиттер (Uce): 150 V
   Макcимально допустимое напряжение эмиттер-база (Ueb): 5 V
   Макcимальный постоянный ток коллектора (Ic): 8 A
   Предельная температура PN-перехода (Tj): 150 °C
   Граничная частота коэффициента передачи тока (ft): 30 MHz
   Статический коэффициент передачи тока (hfe): 40
   Корпус транзистора: TO220

 Аналоги (замена) для MJF15031G

 

 

MJF15031G Datasheet (PDF)

 ..1. Size:134K  onsemi
mjf15031g.pdf

MJF15031G
MJF15031G

MJF15030 (NPN),MJF15031 (PNP)Complementary PowerTransistorsFor Isolated Package ApplicationsDesigned for general-purpose amplifier and switching applications,http://onsemi.comwhere the mounting surface of the device is required to be electricallyisolated from the heatsink or chassis.COMPLEMENTARY SILICONFeaturesPOWER TRANSISTORS Electrically Similar to the Popular MJE

 6.1. Size:246K  motorola
mjf15030 mjf15031.pdf

MJF15031G
MJF15031G

Order this documentMOTOROLAby MJF15030/DSEMICONDUCTOR TECHNICAL DATANPNMJF15030Complementary PowerPNPMJF15031TransistorsFor Isolated Package ApplicationsDesigned for generalpurpose amplifier and switching applications, where theCOMPLEMENTARYmounting surface of the device is required to be electrically isolated from the heatsinkSILICONor chassis.POWER TRANSISTO

 6.2. Size:128K  onsemi
mjf15030 mjf15031.pdf

MJF15031G
MJF15031G

MJF15030 (NPN),MJF15031 (PNP)Complementary PowerTransistorsFor Isolated Package ApplicationsDesigned for general-purpose amplifier and switching applications,http://onsemi.comwhere the mounting surface of the device is required to be electricallyisolated from the heatsink or chassis.COMPLEMENTARY SILICONFeaturesPOWER TRANSISTORS Electrically Similar to the Popular MJE

 6.3. Size:209K  inchange semiconductor
mjf15031.pdf

MJF15031G
MJF15031G

isc Silicon PNP Power Transistor MJF15031DESCRIPTIONCollector-Emitter Sustaining Voltage-: V = 150V(Min)CEO(SUS)High DC current gain -: h = 40 (Min) @I = 3.0 AFE C: h = 20 (Min) @I = 4.0 AFE CComplement to Type MJF15030Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for general-purpose amplifier and swit

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