MJF32CG Todos los transistores

 

MJF32CG . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: MJF32CG
   Material: Si
   Polaridad de transistor: PNP

ESPECIFICACIONES MÁXIMAS


   Disipación total del dispositivo (Pc): 28 W
   Tensión colector-base (Vcb): 100 V
   Tensión colector-emisor (Vce): 100 V
   Tensión emisor-base (Veb): 5 V
   Corriente del colector DC máxima (Ic): 3 A
   Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   Transición de frecuencia (ft): 3 MHz
   Ganancia de corriente contínua (hfe): 10
   Paquete / Cubierta: TO220F

 Búsqueda de reemplazo de transistor bipolar MJF32CG

 

MJF32CG Datasheet (PDF)

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 mjf32cg.pdf pdf_icon

MJF32CG

MJF31C (NPN), MJF32C (PNP) Preferred Device Complementary Silicon Plastic Power Transistors for Isolated Package http //onsemi.com Applications Designed for use in general purpose amplifier and switching 3.0 AMPERE applications. POWER TRANSISTORS COMPLEMENTARY SILICON Features 100 VOLTS, 28 WATTS Collector-Emitter Saturation Voltage - VCE(sat) = 1.2 Vdc (Max) @ IC = 3.0 Adc

 8.1. Size:190K  onsemi
 mjf31c mjf32c.pdf pdf_icon

MJF32CG

MJF31C (NPN), MJF32C (PNP) Preferred Device Complementary Silicon Plastic Power Transistors for Isolated Package http //onsemi.com Applications Designed for use in general purpose amplifier and switching 3.0 AMPERE applications. POWER TRANSISTORS COMPLEMENTARY SILICON Features 100 VOLTS, 28 WATTS Collector-Emitter Saturation Voltage - VCE(sat) = 1.2 Vdc (Max) @ IC = 3.0 Adc

Otros transistores... MJF13009 , MJF15030G , MJF15031G , MJF18004G , MJF18008G , MJF2955G , MJF3055G , MJF31CG , BD222 , MJF44H11G , MJF45H11G , MJF47G , MJF6388G , MJF6668 , MJF6668G , MJH11017G , MJH11019G .

 

 
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