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MJF32CG Specs and Replacement


   Type Designator: MJF32CG
   Material of Transistor: Si
   Polarity: PNP
   Maximum Collector Power Dissipation (Pc): 28 W
   Maximum Collector-Base Voltage |Vcb|: 100 V
   Maximum Collector-Emitter Voltage |Vce|: 100 V
   Maximum Emitter-Base Voltage |Veb|: 5 V
   Maximum Collector Current |Ic max|: 3 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Transition Frequency (ft): 3 MHz
   Forward Current Transfer Ratio (hFE), MIN: 10
   Noise Figure, dB: -
   Package: TO220F

 MJF32CG Transistor Equivalent Substitute - Cross-Reference Search

   

MJF32CG detailed specifications

 ..1. Size:122K  onsemi
 mjf32cg.pdf pdf_icon

MJF32CG

MJF31C (NPN), MJF32C (PNP) Preferred Device Complementary Silicon Plastic Power Transistors for Isolated Package http //onsemi.com Applications Designed for use in general purpose amplifier and switching 3.0 AMPERE applications. POWER TRANSISTORS COMPLEMENTARY SILICON Features 100 VOLTS, 28 WATTS Collector-Emitter Saturation Voltage - VCE(sat) = 1.2 Vdc (Max) @ IC = 3.0 Adc ... See More ⇒

 8.1. Size:190K  onsemi
 mjf31c mjf32c.pdf pdf_icon

MJF32CG

MJF31C (NPN), MJF32C (PNP) Preferred Device Complementary Silicon Plastic Power Transistors for Isolated Package http //onsemi.com Applications Designed for use in general purpose amplifier and switching 3.0 AMPERE applications. POWER TRANSISTORS COMPLEMENTARY SILICON Features 100 VOLTS, 28 WATTS Collector-Emitter Saturation Voltage - VCE(sat) = 1.2 Vdc (Max) @ IC = 3.0 Adc ... See More ⇒

Detailed specifications: MJF13009 , MJF15030G , MJF15031G , MJF18004G , MJF18008G , MJF2955G , MJF3055G , MJF31CG , BD222 , MJF44H11G , MJF45H11G , MJF47G , MJF6388G , MJF6668 , MJF6668G , MJH11017G , MJH11019G .

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