MJF32CG Datasheet. Specs and Replacement

Type Designator: MJF32CG  📄📄 

Material of Transistor: Si

Polarity: PNP

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 28 W

Maximum Collector-Base Voltage |Vcb|: 100 V

Maximum Collector-Emitter Voltage |Vce|: 100 V

Maximum Emitter-Base Voltage |Veb|: 5 V

Maximum Collector Current |Ic max|: 3 A

Max. Operating Junction Temperature (Tj): 150 °C

Electrical Characteristics

Transition Frequency (ft): 3 MHz

Forward Current Transfer Ratio (hFE), MIN: 10

Noise Figure, dB: -

Package: TO220F

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MJF32CG datasheet

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MJF32CG

MJF31C (NPN), MJF32C (PNP) Preferred Device Complementary Silicon Plastic Power Transistors for Isolated Package http //onsemi.com Applications Designed for use in general purpose amplifier and switching 3.0 AMPERE applications. POWER TRANSISTORS COMPLEMENTARY SILICON Features 100 VOLTS, 28 WATTS Collector-Emitter Saturation Voltage - VCE(sat) = 1.2 Vdc (Max) @ IC = 3.0 Adc ... See More ⇒

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MJF32CG

MJF31C (NPN), MJF32C (PNP) Preferred Device Complementary Silicon Plastic Power Transistors for Isolated Package http //onsemi.com Applications Designed for use in general purpose amplifier and switching 3.0 AMPERE applications. POWER TRANSISTORS COMPLEMENTARY SILICON Features 100 VOLTS, 28 WATTS Collector-Emitter Saturation Voltage - VCE(sat) = 1.2 Vdc (Max) @ IC = 3.0 Adc ... See More ⇒

Detailed specifications: MJF13009, MJF15030G, MJF15031G, MJF18004G, MJF18008G, MJF2955G, MJF3055G, MJF31CG, BD222, MJF44H11G, MJF45H11G, MJF47G, MJF6388G, MJF6668, MJF6668G, MJH11017G, MJH11019G

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