MJH11022G Todos los transistores

 

MJH11022G . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: MJH11022G
   Código: MJH11022
   Material: Si
   Polaridad de transistor: NPN

ESPECIFICACIONES MÁXIMAS


   Disipación total del dispositivo (Pc): 150 W
   Tensión colector-base (Vcb): 250 V
   Tensión colector-emisor (Vce): 250 V
   Tensión emisor-base (Veb): 5 V
   Corriente del colector DC máxima (Ic): 15 A
   Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   Transición de frecuencia (ft): 3 MHz
   Capacitancia de salida (Cc): 400 pF
   Ganancia de corriente contínua (hfe): 400
   Paquete / Cubierta: TO218 TO247
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MJH11022G Datasheet (PDF)

 ..1. Size:141K  onsemi
 mjh11022g.pdf pdf_icon

MJH11022G

MJH11017, MJH11019,MJH11021 (PNP)MJH11018, MJH11020,MJH11022 (NPN)Complementary Darlingtonhttp://onsemi.comSilicon Power TransistorsThese devices are designed for use as general purpose amplifiers,15 AMPERE DARLINGTONlow frequency switching and motor control applications.COMPLEMENTARY SILICONFeaturesPOWER TRANSISTORS High DC Current Gain @ 10 Adc hFE = 400 Min (

 6.1. Size:212K  motorola
 mjh11017 mjh11018 mjh11019 mjh11020 mjh11021 mjh11022.pdf pdf_icon

MJH11022G

Order this documentMOTOROLAby MJH11017/DSEMICONDUCTOR TECHNICAL DATAMJH10012(See MJ10012)Complementary DarlingtonPNPSilicon Power Transistors*MJH11017. . . designed for use as general purpose amplifiers, low frequency switching andmotor control applications.MJH11019* High DC Current Gain @ 10 Adc hFE = 400 Min (All Types) CollectorEmitter Sustaining Vo

 6.2. Size:269K  inchange semiconductor
 mjh11022.pdf pdf_icon

MJH11022G

isc Silicon NPN Darlington Power Transistor MJH11022DESCRIPTIONCollector-Emitter Sustaining Voltage: V = 250V (Min.)CEO(SUS)High DC Current Gain: h = 400(Min.)@I = 10AFE CLow Collector Saturation Voltage: V = 1.0V(Max.)@ I = 5.0ACE (sat) CComplement to Type MJH11021Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONS

 7.1. Size:141K  onsemi
 mjh11020g.pdf pdf_icon

MJH11022G

MJH11017, MJH11019,MJH11021 (PNP)MJH11018, MJH11020,MJH11022 (NPN)Complementary Darlingtonhttp://onsemi.comSilicon Power TransistorsThese devices are designed for use as general purpose amplifiers,15 AMPERE DARLINGTONlow frequency switching and motor control applications.COMPLEMENTARY SILICONFeaturesPOWER TRANSISTORS High DC Current Gain @ 10 Adc hFE = 400 Min (

MOSTRAR MÁS

Otros transistores... 2SA1803O , 2SA1803R , 2SA1804 , 2SA1804O , 2SA1804R , 2SA1805 , 2SA1805O , 2SA1805R , TIP31 , 2SA181 , 2SA1810 , 2SA1810B , 2SA1810C , 2SA1811 , 2SA1815 , 2SA1815-3 , 2SA1815-4 .

History: MPSA42-BK | 2SC724 | MUN5313DW1T1G | 2SB968 | BUT50P | 2N6128 | 2N1683

 

 
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