All Transistors. MJH11022G Datasheet

 

MJH11022G Datasheet, Equivalent, Cross Reference Search

Type Designator: MJH11022G

SMD Transistor Code: MJH11022

Material of Transistor: Si

Polarity: NPN

Maximum Collector Power Dissipation (Pc): 150 W

Maximum Collector-Base Voltage |Vcb|: 250 V

Maximum Collector-Emitter Voltage |Vce|: 250 V

Maximum Emitter-Base Voltage |Veb|: 5 V

Maximum Collector Current |Ic max|: 15 A

Max. Operating Junction Temperature (Tj): 150 °C

Transition Frequency (ft): 3 MHz

Collector Capacitance (Cc): 400 pF

Forward Current Transfer Ratio (hFE), MIN: 400

Noise Figure, dB: -

Package: TO218_TO247

MJH11022G Transistor Equivalent Substitute - Cross-Reference Search

 

MJH11022G Datasheet (PDF)

1.1. mjh11022g.pdf Size:141K _update

MJH11022G
MJH11022G

MJH11017, MJH11019, MJH11021 (PNP) MJH11018, MJH11020, MJH11022 (NPN) Complementary Darlington http://onsemi.com Silicon Power Transistors These devices are designed for use as general purpose amplifiers, 15 AMPERE DARLINGTON low frequency switching and motor control applications. COMPLEMENTARY SILICON Features POWER TRANSISTORS • High DC Current Gain @ 10 Adc — hFE = 400 Min (

2.1. mjh11017 mjh11018 mjh11019 mjh11020 mjh11021 mjh11022.pdf Size:212K _motorola

MJH11022G
MJH11022G

Order this document MOTOROLA by MJH11017/D SEMICONDUCTOR TECHNICAL DATA MJH10012 (See MJ10012) Complementary Darlington PNP Silicon Power Transistors * MJH11017 . . . designed for use as general purpose amplifiers, low frequency switching and motor control applications. MJH11019* High DC Current Gain @ 10 Adc hFE = 400 Min (All Types) CollectorEmitter Sustaining Voltage MJH1

 3.1. mjh11020g.pdf Size:141K _update

MJH11022G
MJH11022G

MJH11017, MJH11019, MJH11021 (PNP) MJH11018, MJH11020, MJH11022 (NPN) Complementary Darlington http://onsemi.com Silicon Power Transistors These devices are designed for use as general purpose amplifiers, 15 AMPERE DARLINGTON low frequency switching and motor control applications. COMPLEMENTARY SILICON Features POWER TRANSISTORS • High DC Current Gain @ 10 Adc — hFE = 400 Min (

3.2. mjh11021g.pdf Size:141K _update

MJH11022G
MJH11022G

MJH11017, MJH11019, MJH11021 (PNP) MJH11018, MJH11020, MJH11022 (NPN) Complementary Darlington http://onsemi.com Silicon Power Transistors These devices are designed for use as general purpose amplifiers, 15 AMPERE DARLINGTON low frequency switching and motor control applications. COMPLEMENTARY SILICON Features POWER TRANSISTORS • High DC Current Gain @ 10 Adc — hFE = 400 Min (

Datasheet: 2N3181 , 2N3182 , 2N3183 , 2N3184 , 2N3185 , 2N3186 , 2N3187 , 2N3188 , BC547B , 2N319 , 2N3190 , 2N3191 , 2N3192 , 2N3193 , 2N3194 , 2N3195 , 2N3196 .

 
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