MJH11022G Specs and Replacement

Type Designator: MJH11022G

SMD Transistor Code: MJH11022

Material of Transistor: Si

Polarity: NPN

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 150 W

Maximum Collector-Base Voltage |Vcb|: 250 V

Maximum Collector-Emitter Voltage |Vce|: 250 V

Maximum Emitter-Base Voltage |Veb|: 5 V

Maximum Collector Current |Ic max|: 15 A

Max. Operating Junction Temperature (Tj): 150 °C

Electrical Characteristics

Transition Frequency (ft): 3 MHz

Collector Capacitance (Cc): 400 pF

Forward Current Transfer Ratio (hFE), MIN: 400

Noise Figure, dB: -

Package: TO218 TO247

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MJH11022G datasheet

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MJH11022G

MJH11017, MJH11019, MJH11021 (PNP) MJH11018, MJH11020, MJH11022 (NPN) Complementary Darlington http //onsemi.com Silicon Power Transistors These devices are designed for use as general purpose amplifiers, 15 AMPERE DARLINGTON low frequency switching and motor control applications. COMPLEMENTARY SILICON Features POWER TRANSISTORS High DC Current Gain @ 10 Adc hFE = 400 Min (... See More ⇒

 6.1. Size:212K  motorola

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MJH11022G

Order this document MOTOROLA by MJH11017/D SEMICONDUCTOR TECHNICAL DATA MJH10012 (See MJ10012) Complementary Darlington PNP Silicon Power Transistors * MJH11017 . . . designed for use as general purpose amplifiers, low frequency switching and motor control applications. MJH11019* High DC Current Gain @ 10 Adc hFE = 400 Min (All Types) Collector Emitter Sustaining Vo... See More ⇒

 6.2. Size:269K  inchange semiconductor

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MJH11022G

isc Silicon NPN Darlington Power Transistor MJH11022 DESCRIPTION Collector-Emitter Sustaining Voltage V = 250V (Min.) CEO(SUS) High DC Current Gain h = 400(Min.)@I = 10A FE C Low Collector Saturation Voltage V = 1.0V(Max.)@ I = 5.0A CE (sat) C Complement to Type MJH11021 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS... See More ⇒

 7.1. Size:141K  onsemi

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MJH11022G

MJH11017, MJH11019, MJH11021 (PNP) MJH11018, MJH11020, MJH11022 (NPN) Complementary Darlington http //onsemi.com Silicon Power Transistors These devices are designed for use as general purpose amplifiers, 15 AMPERE DARLINGTON low frequency switching and motor control applications. COMPLEMENTARY SILICON Features POWER TRANSISTORS High DC Current Gain @ 10 Adc hFE = 400 Min (... See More ⇒

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Detailed specifications: MJF47G, MJF6388G, MJF6668, MJF6668G, MJH11017G, MJH11019G, MJH11020G, MJH11021G, 2N3055, MJH16010, MJH16010A, MJH16012, MJH16018, MJH6284G, MJH6287G, MJL1302AG, MJL21193G

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