MJW1302AG Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: MJW1302AG

Código: MJW1302A

Material: Si

Polaridad de transistor: PNP

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pc): 200 W

Tensión colector-base (Vcb): 230 V

Tensión colector-emisor (Vce): 230 V

Tensión emisor-base (Veb): 5 V

Corriente del colector DC máxima (Ic): 15 A

Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Transición de frecuencia (fT): 30 MHz

Capacitancia de salida (Cc): 600 pF

Ganancia de corriente contínua (hFE): 50

Encapsulados: TO247

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MJW1302AG datasheet

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MJW1302AG

MJW3281A (NPN) MJW1302A (PNP) Complementary NPN-PNP Silicon Power Bipolar Transistors http //onsemi.com The MJW3281A and MJW1302A are PowerBaset power transistors for high power audio, disk head positioners and other linear 15 AMPERES applications. COMPLEMENTARY Features SILICON POWER TRANSISTORS Designed for 100 W Audio Frequency 230 VOLTS 200 WATTS Gain Complementary

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MJW1302AG

MJW3281A (NPN) MJW1302A (PNP) Complementary NPN-PNP Silicon Power Bipolar Transistors http //onsemi.com The MJW3281A and MJW1302A are PowerBaset power transistors for high power audio, disk head positioners and other linear 15 AMPERES applications. COMPLEMENTARY Features SILICON POWER TRANSISTORS Designed for 100 W Audio Frequency 230 VOLTS 200 WATTS Gain Complementary

 6.2. Size:711K  cn sptech
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MJW1302AG

SPTECH Product Specification MJW1302A SPTECH Silicon PNP Power Transistor DESCRIPTION High DC current amplifier rate h 50-200@V = 5V,I = 1A FE CE C Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS High power audio, disk head positioners and other linear applications. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE U

Otros transistores... MJL1302AG, MJL21193G, MJL21194G, MJL21195G, MJL21196G, MJL3281AG, MJL4281AG, MJL4302AG, 13009, MJW21191, MJW21192, MJW21193G, MJW21194G, MJW21195G, MJW21196G, MJW3281AG, 3CD010