3CD100 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

3CD100 PNP B C D E F G H PCM TC=75 100 W ICM 10 A Tjm 175 Tstg -55 150 VCE=10V Rth 1 /W IC=3A V(BR)CBO ICB=5mA 50 80 100 120 150 200 250 V V(BR)CEO ICE=5mA 50 80 100 120 150 200 250 V V(BR)EBO IEB=5mA 4.0 V ICBO VCB=50V

2SB1094(3CD1094) PNP /SILICON PNP TRANSISTOR Purpose Audio frequency power amplifier applications. 2SD1585(3DD1585) Features Complementary to the 2SD1585(3DD1585). /Absolute maximum ratings(Ta=25 ) Symbol Rating Unit V -60 V CBO V -60 V CEO V -7.0 V

Shaanxi Qunli Electric Co., Ltd Add. No. 1 Qunli Road,Baoji City,Shaanxi,China 3CD102,3CD103 PNP Silicon Low Frequency High Power Transistor Features 1. Heavy output current.Small saturation voltage drop. Good temperature stability. The cover is insulation with three electrodes for 3CD102. 2. Implementation of standards GJB33 A-97, QZJ840611A, QZJ840611. 3. Use for power amplify

Shaanxi Qunli Electric Co., Ltd Add. No. 1 Qunli Road,Baoji City,Shaanxi,China 3CD103 PNP Silicon Low Frequency High Power Transistor Features 1. Heavy output current.Small saturation voltage drop. Good temperature stability. 2. Implementation of standards GJB33 A-97, QZJ840611A, QZJ840611. 3. Use for power amplify, Low-speed switch, power adjustment. 4. Quality Class JP, JT, JC