3CD6
. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: 3CD6
Material: Si
Polaridad de transistor: PNP
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 50
W
Tensión colector-base (Vcb): 50
V
Tensión colector-emisor (Vce): 50
V
Tensión emisor-base (Veb): 4
V
Corriente del colector DC máxima (Ic): 5
A
Temperatura operativa máxima (Tj): 175
°C
CARACTERÍSTICAS ELÉCTRICAS
Ganancia de corriente contínua (hfe): 15
Paquete / Cubierta:
TO257
Búsqueda de reemplazo de transistor bipolar 3CD6
3CD6
Datasheet (PDF)
..1. Size:142K china
3cd6.pdf 
3CD6 PNP B C D E F G H PCM TC=75 50 W ICM 5 A Tjm 175 Tstg -55~150 VCE=10V Rth 2 /W IC=1.5A V(BR)CBO ICB=5mA 50 80 110 150 200 250 300 V V(BR)CEO ICE=5mA 50 80 110 150 200 250 300 V V(BR)EBO IEB=7mA 4.0 V ICBO VCB=20V
0.1. Size:142K china
3cd6109.pdf
3CD6 PNP B C D E F G H PCM TC=75 50 W ICM 5 A Tjm 175 Tstg -55~150 VCE=10V Rth 2 /W IC=1.5A V(BR)CBO ICB=5mA 50 80 110 150 200 250 300 V V(BR)CEO ICE=5mA 50 80 110 150 200 250 300 V V(BR)EBO IEB=7mA 4.0 V ICBO VCB=20V
0.2. Size:347K lzg
3cd6125.pdf
2N6125(3CD6125) PNP /SILICON PNP TRANSISTOR Purpose: Medium power linear switching applications. 2N61223DD6122 Features: Complement to 2N6122(3DD6122). /Absolute maximum ratings(Ta=25) Symbol Rating Unit V -60 V CBO V -60 V CEO V -5.0 V EB
0.3. Size:342K lzg
3cd6124.pdf
2N6124(3CD6124) PNP /SILICON PNP TRANSISTOR Purpose: Medium power linear switching applications. 2N61213DD6121 Features: Complement to 2N6121(3DD6121). /Absolute maximum ratings(Ta=25) Symbol Rating Unit V -45 V CBO V -45 V CEO V -5.0 V EB
0.4. Size:344K lzg
3cd6126.pdf
2N6126(3CD6126) PNP /SILICON PNP TRANSISTOR Purpose: Medium power linear switching applications. 2N61233DD6123 Features: Complement to 2N6123(3DD6123). /Absolute maximum ratings(Ta=25) Symbol Rating Unit V -80 V CBO V -80 V CEO V -5.0 V EB
0.5. Size:188K inchange semiconductor
3cd6d.pdf
isc Silicon PNP Power Transistor 3CD6DDESCRIPTIONCollector-Emitter Breakdown Voltage-: V = -110V(Min.)(BR)CEODC Current Gain-: h =10-180@I = -2.5AFE CCollector-Emitter Saturation Voltage-: V )= -1.5V(Max)@ I = -2.5ACE(sat CMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSPower amplifierLow speed switchingP
Otros transistores... 2SA1801
, 2SA1802
, 2SA1802A
, 2SA1803
, 2SA1803O
, 2SA1803R
, 2SA1804
, 2SA1804O
, TIP35C
, 2SA1805
, 2SA1805O
, 2SA1805R
, 2SA1806
, 2SA181
, 2SA1810
, 2SA1810B
, 2SA1810C
.
