3CD6 Specs and Replacement

Type Designator: 3CD6

Material of Transistor: Si

Polarity: PNP

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 50 W

Maximum Collector-Base Voltage |Vcb|: 50 V

Maximum Collector-Emitter Voltage |Vce|: 50 V

Maximum Emitter-Base Voltage |Veb|: 4 V

Maximum Collector Current |Ic max|: 5 A

Max. Operating Junction Temperature (Tj): 175 °C

Electrical Characteristics

Forward Current Transfer Ratio (hFE), MIN: 15

Noise Figure, dB: -

Package: TO257

 3CD6 Substitution

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3CD6 datasheet

 ..1. Size:142K  china

 3cd6.pdf pdf_icon

3CD6

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 3cd6109.pdf pdf_icon

3CD6

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 3cd6125.pdf pdf_icon

3CD6

2N6125(3CD6125) PNP /SILICON PNP TRANSISTOR Purpose Medium power linear switching applications. 2N6122 3DD6122 Features Complement to 2N6122(3DD6122). /Absolute maximum ratings(Ta=25 ) Symbol Rating Unit V -60 V CBO V -60 V CEO V -5.0 V EB... See More ⇒

 0.3. Size:342K  lzg

 3cd6124.pdf pdf_icon

3CD6

2N6124(3CD6124) PNP /SILICON PNP TRANSISTOR Purpose Medium power linear switching applications. 2N6121 3DD6121 Features Complement to 2N6121(3DD6121). /Absolute maximum ratings(Ta=25 ) Symbol Rating Unit V -45 V CBO V -45 V CEO V -5.0 V EB... See More ⇒

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Detailed specifications: 3CD32A, 3CD32B, 3CD32C, 3CD4, 3CD42, 3CD438, 3CD4399, 3CD5, TIP42, 3CD6109, 3CD6124, 3CD6125, 3CD6126, 3CD8, 3CD834, 3CD837, 3CD9

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