3CG1013 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

3CG1013 PNP PCM TA=25 0.9 W ICM 1 A Tjm 175 Tstg -55~150 V(BR)CBO ICB=0.1mA 160 V V(BR)CEO ICE=0.1mA 160 V V(BR)EBO IEB=0.1mA 6.0 V ICBO VCB=30V 1.0 A ICEO VCE=30V 1.0 A IEBO VEB=5V 0.5 A VBEsat 1.5 IC=500mA V IB=50mA

2SA1013T(3CG1013T) PNP /SILICON PNP TRANSISTOR :,/Purpose: Color TV vert.and class B sound output applications. :,, 2SC2383T(3DG2383T)/Features: High voltage, large continuous collector current capability, Complementary pair with 2SC2383T(3DG2383T). /Absolute maximum rat

2SA1015(3CG1015) PNP /SILICON PNP TRANSISTOR :,/Purpose: Audio frequency general purpose, driver stage amplifier applications. :,, h ,, 2SC1815(3DG1815) FEFeatures: High voltage and high current, excellent h linearity, low noise, FEcomplementary p

2SA1018(3CG1018) PNP /SILICON PNP TRANSISTOR :/Purpose: General amplifier. :, 2SC1473(3DG1473) Features: High V , Complementary pair with 2SC1473(3DG1473). CEO/Absolute maximum ratings(Ta=25) Symbol Rating Unit V -250 V CBO V -200 V CEO V -5.0 V EBO I -7

2SA1015M(3CG1015M) PNP /SILICON PNP TRANSISTOR :,/Purpose: Audio frequency general purpose amplifier applications, driver stage amplifier applications. /Absolute maximum ratings(Ta=25) Symbol Rating Unit V -50 V CBO V -50 V CEO V -5.0 V EBO I -150 mA C I -50 m