3CG1013 Specs and Replacement
Type Designator: 3CG1013
Material of Transistor: Si
Polarity: PNP
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 0.9 W
Maximum Collector-Base Voltage |Vcb|: 160 V
Maximum Collector-Emitter Voltage |Vce|: 160 V
Maximum Emitter-Base Voltage |Veb|: 6 V
Maximum Collector Current |Ic max|: 1 A
Max. Operating Junction Temperature (Tj): 175 °C
Electrical Characteristics
Transition Frequency (ft): 15 MHz
Collector Capacitance (Cc): 35 pF
Forward Current Transfer Ratio (hFE), MIN: 60
Package: TO92MOD
3CG1013 Substitution
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3CG1013 datasheet
3CG1013 PNP PCM TA=25 0.9 W ICM 1 A Tjm 175 Tstg -55 150 V(BR)CBO ICB=0.1mA 160 V V(BR)CEO ICE=0.1mA 160 V V(BR)EBO IEB=0.1mA 6.0 V ICBO VCB=30V 1.0 A ICEO VCE=30V 1.0 A IEBO VEB=5V 0.5 A VBEsat 1.5 IC=500mA V IB=50mA ... See More ⇒
2SA1013T(3CG1013T) PNP /SILICON PNP TRANSISTOR , /Purpose Color TV vert.and class B sound output applications. , , 2SC2383T(3DG2383T) /Features High voltage, large continuous collector current capability, Complementary pair with 2SC2383T(3DG2383T). /Absolute maximum rat... See More ⇒
2SA1015(3CG1015) PNP /SILICON PNP TRANSISTOR , /Purpose Audio frequency general purpose, driver stage amplifier applications. , , h , , 2SC1815(3DG1815) FE Features High voltage and high current, excellent h linearity, low noise, FE complementary p... See More ⇒
2SA1018(3CG1018) PNP /SILICON PNP TRANSISTOR /Purpose General amplifier. , 2SC1473(3DG1473) Features High V , Complementary pair with 2SC1473(3DG1473). CEO /Absolute maximum ratings(Ta=25 ) Symbol Rating Unit V -250 V CBO V -200 V CEO V -5.0 V EBO I -7... See More ⇒
Detailed specifications: 3CD8, 3CD834, 3CD837, 3CD9, 3CD940, 3CF1, 3CF5, 3CG1, NJW0281G, 3CG1013T, 3CG1015, 3CG1015M, 3CG1018, 3CG102, 3CG1020, 3CG1030, 3CG1030A
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