3CG1020 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: 3CG1020
   Material: Si
   Polaridad de transistor: PNP

ESPECIFICACIONES MÁXIMAS

   Disipación total del dispositivo (Pc): 0.9 W
   Tensión colector-base (Vcb): 50 V
   Tensión colector-emisor (Vce): 50 V
   Tensión emisor-base (Veb): 5 V
   Corriente del colector DC máxima (Ic): 2 A
   Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

   Transición de frecuencia (ft): 100 MHz
   Capacitancia de salida (Cc): 40 pF
   Ganancia de corriente contínua (hfe): 70
   Paquete / Cubierta: TO92L

Búsqueda de reemplazo de transistor bipolar 3CG1020

3CG1020 Datasheet (PDF)

..1. Size:115K china
3cg1020.pdf

3CG1020(2SA1020) PNP PCM TA=25 900 mW ICM 2 A Tjm 150 Tstg -55~150 V(BR)CBO ICB0.1mA 50 V V(BR)CEO ICE0.1mA 50 V V(BR)EBO IEB0.1mA 5.0 V ICBO VCB=50V 1.0 A VBEsat 1.2 IC=1000mA V IB=50mA VCEsat 0.5 VCE=2V, hFE 70

8.1. Size:24K shaanxi
3cg102.pdf

Shaanxi Qunli Electric Co., Ltd Add.:No. 1 Qunli Road,Baoji City,Shaanxi,China 3CG102PNP Silicon High Frequency Low Power Transistor Features: 1. Using epitaxy planar technology structure. High working frequency. Metallic packaging. 2. Small volume, light weight, easy installation. 3. Use for high frequency oscillation, high frequency small signal amplification, low power source a

9.1. Size:118K china
3cg1013.pdf

3CG1013 PNP PCM TA=25 0.9 W ICM 1 A Tjm 175 Tstg -55~150 V(BR)CBO ICB=0.1mA 160 V V(BR)CEO ICE=0.1mA 160 V V(BR)EBO IEB=0.1mA 6.0 V ICBO VCB=30V 1.0 A ICEO VCE=30V 1.0 A IEBO VEB=5V 0.5 A VBEsat 1.5 IC=500mA V IB=50mA

9.2. Size:238K lzg
3cg1015.pdf

2SA1015(3CG1015) PNP /SILICON PNP TRANSISTOR :,/Purpose: Audio frequency general purpose, driver stage amplifier applications. :,, h ,, 2SC1815(3DG1815) FEFeatures: High voltage and high current, excellent h linearity, low noise, FEcomplementary p

9.3. Size:247K lzg
3cg1030.pdf

2SB1030(3CG1030) 2SB1030A(3CG1030A) PNP /SILICON PNP TRANSISTOR :, 2SD1423(3DG1423)/2SD1423A(3DG1423A) Purpose: Low frequency power amplifier, complementary to 2SD1423(3DG1423)/2SD1423A(3DG1423A). : Features: Optimum for high-density mounting. /Absolute Maximum Ratin

9.4. Size:288K lzg
3cg1037ak.pdf

2SA1037AK(3CG1037AK) PNP /SILICON PNP TRANSISTOR : /Purpose: General amplifier applications. :, 2SC2412K(3DG2412K)/Features: Excellent h linearity, FEComplementary pair with 2SC2412K(3DG2412K). /Absolute maximum ratings(Ta=25) Symbol Rating Unit V -60 V C

9.5. Size:248K lzg
3cg1013t.pdf

2SA1013T(3CG1013T) PNP /SILICON PNP TRANSISTOR :,/Purpose: Color TV vert.and class B sound output applications. :,, 2SC2383T(3DG2383T)/Features: High voltage, large continuous collector current capability, Complementary pair with 2SC2383T(3DG2383T). /Absolute maximum rat

9.6. Size:873K lzg
3cg1036k.pdf

2SA1036K(3CG1036K) PNP /SILICON PNP TRANSISTOR : Purpose: Medium power amplifier applications. : 2SC2411K3DG2411K Features: .Large Ic low Vce(sat),complementary pair with the 2SC2411K(3DG2411K). /Absolute maximum ratings(Ta=25)

9.7. Size:190K lzg
3cg1018.pdf

2SA1018(3CG1018) PNP /SILICON PNP TRANSISTOR :/Purpose: General amplifier. :, 2SC1473(3DG1473) Features: High V , Complementary pair with 2SC1473(3DG1473). CEO/Absolute maximum ratings(Ta=25) Symbol Rating Unit V -250 V CBO V -200 V CEO V -5.0 V EBO I -7

9.8. Size:243K lzg
3cg1015m.pdf

2SA1015M(3CG1015M) PNP /SILICON PNP TRANSISTOR :,/Purpose: Audio frequency general purpose amplifier applications, driver stage amplifier applications. /Absolute maximum ratings(Ta=25) Symbol Rating Unit V -50 V CBO V -50 V CEO V -5.0 V EBO I -150 mA C I -50 m

9.9. Size:247K lzg
3cg1030a.pdf

9.10. Size:203K lzg
3cg1091.pdf

2SA1091(3CG1091) PNP /SILICON PNP TRANSISTOR :,,/Purpose: High voltage control, plasma display, nixie tube driver, cathode ray tube brightness control applications. :,,/Features: High voltage, low saturation voltage, small collector output cap

9.11. Size:287K lzg
3cg1048.pdf

2SA1048(3CG1048) PNP /SILICON PNP TRANSISTOR :/Purpose: Audio frequency amplifier applications. :,,, h ,, FE 2SC2458(3DG2458)/Features: Small package, high voltage, high h , FEexcellent h linearity, low noise, Complementary pair wi

Otros transistores... HA9079 , HA9500 , HA9501 , HA9502 , HA9531 , HA9531A , HA9532 , HA9532A , TIP142 , HCT2907A , HCT2907M , HDA412 , HDA420 , HDA496 , HEP637 , HEPG0001 , HEPG0002 .

History: KT626A | KT361V | 2SD837A | 2SD651 | 2SD790 | 2SB350A | 2SA1909

Liste

Recientemente añadidas las descripciónes de los transistores:

BJT: SBT42 | 2SA200-Y | 2SA200-O | 2SD882-Q | 2SD882-P | 2SD882-E | 2SC945-L | 2SC945-H | 2SC4226-R23 | 2SC3357-F | 2SC3357-E | 2SC3356-R26 | 2SC3356-R24 | 2SC3356-R23 | 2SB772-Q | 2SB772-P | 2SB772-E | 2SA1015-L | 2SA1015-H | HSS8550 | HSS8050