3CG1260 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: 3CG1260
   Material: Si
   Polaridad de transistor: PNP

ESPECIFICACIONES MÁXIMAS

   Disipación total del dispositivo (Pc): 0.5 W
   Tensión colector-base (Vcb): 80 V
   Tensión colector-emisor (Vce): 80 V
   Tensión emisor-base (Veb): 5 V
   Corriente del colector DC máxima (Ic): 1 A
   Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

   Transición de frecuencia (ft): 100 MHz
   Capacitancia de salida (Cc): 25 pF
   Ganancia de corriente contínua (hfe): 82
   Paquete / Cubierta: SOT89

Búsqueda de reemplazo de transistor bipolar 3CG1260

3CG1260 Datasheet (PDF)

..1. Size:178K lzg
3cg1260.pdf

2SB1260(3CG1260) PNP /SILICON PNP TRANSISTOR Purpose: Power amplifier applications. : 2SD1898(3DG1898) Features: High breakdown voltage, good h linearity, low V , complements FE CE(sat)the 2SD1898(3DG1898). /Absolute maximum ratings(Ta=25

9.1. Size:115K china
3cg12.pdf

3CG12 PNP A B C D E F G H I PCM TA=25 500 mW ICM 50 mA Tjm 175 Tstg -55~150 V(BR)CBO ICB=0.1mA 20 50 80 20 40 70 15 40 60 V V(BR)CEO ICE=0.1mA 15 40 70 15 30 60 12 30 50 V V(BR)EBO IEB=0.1mA 4.0 V ICBO VCB=10V

9.2. Size:317K lzg
3cg1201.pdf

2SA1201(3CG1201) PNP /SILICON PNP TRANSISTOR : Purpose: power amplifier applications. ,, 2SC2881(3DG2881) Features: High f , high V , small flat package, complementary pair with 2SC2881(3DG2881). T CEO/Absolute maximum ratings(Ta=25)

9.3. Size:235K lzg
3cg1283.pdf

2SA1283(3CG1283) PNP /SILICON PNP TRANSISTOR Purpose: General purpose amplifier. /Absolute maximum ratings(Ta=25) Symbol Rating Unit V -60 V CBO V -60 V CEO V -6.0 V EBO I -1.0 A C P 0.9 W CT 150 j T -55150 stg /Electrical charact

9.4. Size:256K lzg
3cg1213.pdf

2SA1213(3CG1213) PNP /SILICON PNP TRANSISTOR : Purpose: Power amplifier and switching applications. : , 2SC2873(3DG2873) Features: Low collector saturation voltage, High speed switching time, small flat package, Complementary to 2SC2873(3DG2873).

9.5. Size:196K lzg
3cg1218a.pdf

2SB1218A(3CG1218A) PNP /SILICON PNP TRANSISTOR Purpose: General amplification. :, 2SD1819A(3DG1819A) Features: High h complements the 2SD1819A(3DG1819A). FE, /Absolute maximum ratings(Ta=25) Symbol Rating Unit V -45 V CBO V -45 V CEO V -7.0 V E

9.6. Size:263K lzg
3cg1203.pdf

2SA1203(3CG1203) PNP /SILICON PNP TRANSISTOR : Purpose: Audio frequency amplifier applications. 3W 2SC28833DG2883 Features: Suitable for output stage of 3 watts amplifier, small flat package, complementary to 2SC2883(3DG2883). /Absolute maximum ratings(Ta=2

9.7. Size:149K lzg
3cg1295.pdf

2SB1295(3CG1295) PNP /SILICON PNP TRANSISTOR : Purpose: AF power amplifiermedium-speed switching, small-sized motor drivers. : Features: Large current capacity, low collector to emitter saturation voltage, very s

9.8. Size:30K shaanxi
3cg120.pdf

Shaanxi Qunli Electric Co., Ltd Add.:No. 1 Qunli Road,Baoji City,Shaanxi,China 3CG120,3CG130 PNP Silicon High Frequency Middle Power Transistor Features: 1. Using epitaxy planar technology structure. High working frequency. Metallic packaging. 2. Small volume, light weight, easy installation. 3. Use for high frequency oscillation, high frequency small signal amplification, low power

Otros transistores... 2SA1803O , 2SA1803R , 2SA1804 , 2SA1804O , 2SA1804R , 2SA1805 , 2SA1805O , 2SA1805R , D209L , 2SA181 , 2SA1810 , 2SA1810B , 2SA1810C , 2SA1811 , 2SA1815 , 2SA1815-3 , 2SA1815-4 .

History: KT504A | L8550PLT3G | KT834A | BD13610S | TV41 | GMO290 | D34DJ3

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