3CG1365 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: 3CG1365
   Código: HAE_HAF_HAG
   Material: Si
   Polaridad de transistor: PNP

ESPECIFICACIONES MÁXIMAS

   Disipación total del dispositivo (Pc): 0.15 W
   Tensión colector-base (Vcb): 25 V
   Tensión colector-emisor (Vce): 20 V
   Tensión emisor-base (Veb): 4 V
   Corriente del colector DC máxima (Ic): 0.7 A
   Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

   Transición de frecuencia (ft): 180 MHz
   Ganancia de corriente contínua (hfe): 150
   Paquete / Cubierta: SOT23

Búsqueda de reemplazo de transistor bipolar 3CG1365

3CG1365 Datasheet (PDF)

..1. Size:324K lzg
3cg1365.pdf

2SA1365(3CG1365) PNP /SILICON PNP TRANSISTOR : Purpose: Small type motor drive, relay drive, power supply. : Features: Low collector to emitter saturation voltage, excellent linearity of DC forward curren

9.1. Size:125K china
3cg130.pdf

3CG130 PNP A B C D E F G PCM 700 mW ICM 300 mA Tjm 175 Tstg -55~150 V(BR)CBO ICB=0.1mA 20 35 50 65 80 95 110 V V(BR)CEO ICE=0.1mA 15 30 45 60 75 90 105 V V(BR)EBO IEB=0.1mA 4.0 V ICBO VCB=10V 0.5 A ICEO VCE=10V 1

9.2. Size:121K china
3cg131.pdf

3CG131 PNP A B C D E PCM Tc=75 700 mW ICM 300 mA Tjm 175 Tstg -55~150 V(BR)CBO ICB=0.1mA 15 30 45 60 75 V V(BR)CEO ICE=0.1mA 15 30 45 60 75 V V(BR)EBO IEB=0.1mA 4.0 V ICBO VCB=10V 0.5 A ICEO VCE=10V 1.0 A IEBO VE

9.3. Size:182K lzg
3cg1316.pdf

2SA1316(3CG1316) PNP /SILICON PNP TRANSISTOR : Purpose: Low noise audio amplifier applications. :,, 2SC3329(3DG3329) Features: Low rbb, low noise figure, complementary pair with 2SC3329(3DG3329). /Absolute maximum ratings(Ta=25)

9.4. Size:370K lzg
3cg1386.pdf

2SB1386(3CG1386) PNP /SILICON PNP TRANSISTOR : Purpose: General power amplifier applications. ,, 2SD2098(3DG2098) Features: Low V , excellent DC current gain , complements the 2SD2098(3DG2098). CE(sat)/Absolute maximum ratings(Ta=25)

9.5. Size:297K lzg
3cg1376.pdf

2SA1376(3CG1376) PNP /SILICON PNP TRANSISTOR : Purpose: General purpose amplifier applications requiring high breakdown voltages. : , 2SC3478(3DG3478) Features: High breakdown voltage, good h linearity, complementary to 2SC3478(3DG3478). FE/Absolute maxi

9.6. Size:373K lzg
3cg1320.pdf

2SA1320(3CG1320) PNP /SILICON PNP TRANSISTOR :, Purpose: High voltage switching, color TV chroma output applications . /Absolute maximum ratings(Ta=25) Symbol Rating Unit V -250 V CBO V -250 V CEO V -5.0 V EBO I -50 mA CI -100 mA CPI -20 mA BP 600 mW

9.7. Size:229K lzg
3cg1317.pdf

2SA1317(3CG1317) PNP /SILION PNP TRANSISTOR : Purpose: Capable of being used in the low frequency to high frequency range. :/Features: Large current capacity and wide ASO. /Absolute maximum ratings(Ta=25) Symbol Rating Unit

9.8. Size:266K lzg
3cg1300.pdf

2SA1300(3CG1300) PNP /SILION PNP TRANSISTOR :, Purpose: Strobo flash, medium power amplifier applications. : Features: High DC current gain, excellent h linearity, low saturation voltage. FE/Absolute maximum ratings(Ta=25)

Otros transistores... 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .

History: 2SB1233

Liste

Recientemente añadidas las descripciónes de los transistores:

BJT: SBT42 | 2SA200-Y | 2SA200-O | 2SD882-Q | 2SD882-P | 2SD882-E | 2SC945-L | 2SC945-H | 2SC4226-R23 | 2SC3357-F | 2SC3357-E | 2SC3356-R26 | 2SC3356-R24 | 2SC3356-R23 | 2SB772-Q | 2SB772-P | 2SB772-E | 2SA1015-L | 2SA1015-H | HSS8550 | HSS8050