3CG2
. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: 3CG2
Material: Si
Polaridad de transistor: PNP
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 0.5
W
Tensión colector-base (Vcb): 20
V
Tensión colector-emisor (Vce): 15
V
Tensión emisor-base (Veb): 4
V
Corriente del colector DC máxima (Ic): 0.1
A
Temperatura operativa máxima (Tj): 175
°C
CARACTERÍSTICAS ELÉCTRICAS
Transición de frecuencia (ft): 100
MHz
Ganancia de corriente contínua (hfe): 25
Paquete / Cubierta:
TO18
Búsqueda de reemplazo de transistor bipolar 3CG2
3CG2
Datasheet (PDF)
..1. Size:125K china
3cg2.pdf 
3CG2 PNP A B C D E F G PCM 500 mW ICM 100 mA Tjm 175 Tstg -55~150 V(BR)CBO ICB=0.1mA 20 30 40 50 60 70 80 V V(BR)CEO ICE=0.1mA 15 20 30 40 50 60 70 V V(BR)EBO IEB=0.1mA 4.0 V ICBO VCB=10V 0.2 A ICEO VCE=10V 0.5
0.1. Size:123K china
3cg23.pdf
3CG23 PNP A B C D E F G PCM 700 mW ICM 150 mA Tjm 175 Tstg -55~150 V(BR)CBO ICB=0.1mA 20 30 45 60 75 90 105 V V(BR)CEO ICE=0.1mA 15 25 40 55 70 85 100 V V(BR)EBO IEB=0.1mA 4.0 V ICBO VCB=10V 0.5 A ICEO VCE=10V 1.
0.2. Size:113K china
3cg201.pdf
3CG201 PNP A B C D PCM TA=25 1 W ICM 1 A Tjm 175 Tstg -55~150 V(BR)CEO ICE=0.1mA 60 100 140 180 V V(BR)EBO IEB=0.1mA 4.0 V ICEO VCE=30V 1.0 A IC=500mA VCEsat 0.5 V IB=50mA VCE=5V hFE 25~270 IC=200mA VCE=10V
0.3. Size:129K china
3cg2907a.pdf
3CG2907A(BT2907A) PNP PCM TA=25 225 mW ICM 600 mA Tjm 150 Tstg -55~150 V(BR)CBO ICB=0.1mA 60 V V(BR)CEO ICE=0.1mA 60 V V(BR)EBO IEB=0.1mA 5.0 V ICBO VCB=50V 0.01 A IEBO VEB=5.0V 0.1 A VBEsat 0.4 IC=150mA V IB=15mA VCEsat
0.4. Size:112K china
3cg2905.pdf
3CG2905 PNP PCM TA=25 600 mW ICM 600 mA Tjm 175 Tstg -55~150 V(BR)CBO ICB=0.1mA 60 V V(BR)CEO ICE=0.1mA 40 V V(BR)EBO IEB=0.1mA 5.0 V ICBO VCB=50V 0.02 A IC=150mA VCEsat 0.4 V IB=15mA VCE=10V hFE 35 IC=1mA VCE=5V
0.5. Size:130K china
3cg21.pdf
3CG21 PNP A B C D E PCM Tc=75 300 mW ICM 50 mA Tjm 150 Tstg -55~150 ICB=0.05mV(BR)CBO 15 25 40 55 70 V A V(BR)CEO ICE=0.05mA 15 25 40 55 70 V V(BR)EBO IEB=0.05mA 4.0 V ICBO VCB=10V 0.5 A ICEO VCE=10V 1.0 A I
0.6. Size:116K china
3cg2907.pdf
3CG2907 PNP PCM 400 mW ICM 600 mA Tjm 175 Tstg -55~150 V(BR)CBO ICB=0.1mA 65 V V(BR)CEO ICE=0.1mA 60 V V(BR)EBO IEB=0.1mA 5.0 V ICBO VCB=10V 0.2 A ICEO VCE=10V 0.5 A IEBO VEB=2V 0.2 A VBEsat 1.0 IC=30mA V IB=3mA VCEsat
0.7. Size:124K china
3cg22.pdf
3CG22 PNP A B C D E F G PCM 500 mW ICM 100 mA Tjm 175 Tstg -55~150 V(BR)CBO ICB=0.1mA 20 30 40 50 65 80 95 V V(BR)CEO ICE=0.1mA 15 25 35 50 65 80 95 V V(BR)EBO IEB=0.1mA 4.0 V ICBO VCB=10V 0.1 A ICEO VCE=10V 0.1
0.8. Size:124K china
3cg200.pdf
3CG200 PNP A B C D E F G PCM 700 mW ICM 200 mA Tjm 175 Tstg -55~150 V(BR)CBO ICB=0.05mA 20 30 40 50 60 70 80 V V(BR)CEO ICE=0.05mA 15 20 30 40 50 60 70 V V(BR)EBO IEB=0.05mA 4.0 V ICBO VCB=10V 0.2 A ICEO VCE=10V
0.9. Size:97K foshan
3cg298.pdf
2SA298(3CG298) PNP /SILICON PNP TRANSISTOR :,/Purpose: Audio frequency general purpose, driver stage amplifier applications. :,, h , FEFeatures: High voltage and high current, excellent h linearity, low noise. FE/Absolute maximum ratings(Ta=25)
0.10. Size:176K lzg
3cg2048.pdf
2SA2048(3CG2048) PNP /SILICON PNP RANSISTOR :, Purpose: Small signal low frequency amplifier, high speed switching. 2SC5730(3DG5730) Features: High speed switching, low saturation voltage, complements the 2SC5730(3DG5730). /Absolute maximum ratings(Ta=2
Otros transistores... 2SA1801
, 2SA1802
, 2SA1802A
, 2SA1803
, 2SA1803O
, 2SA1803R
, 2SA1804
, 2SA1804O
, TIP35C
, 2SA1805
, 2SA1805O
, 2SA1805R
, 2SA1806
, 2SA181
, 2SA1810
, 2SA1810B
, 2SA1810C
.
