3CG2 Specs and Replacement
Type Designator: 3CG2
Material of Transistor: Si
Polarity: PNP
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 0.5 W
Maximum Collector-Base Voltage |Vcb|: 20 V
Maximum Collector-Emitter Voltage |Vce|: 15 V
Maximum Emitter-Base Voltage |Veb|: 4 V
Maximum Collector Current |Ic max|: 0.1 A
Max. Operating Junction Temperature (Tj): 175 °C
Electrical Characteristics
Transition Frequency (ft): 100 MHz
Forward Current Transfer Ratio (hFE), MIN: 25
Noise Figure, dB: -
Package: TO18
- BJT ⓘ Cross-Reference Search
3CG2 datasheet
0.1. Size:123K china
3cg23.pdf 
3CG23 PNP A B C D E F G PCM 700 mW ICM 150 mA Tjm 175 Tstg -55 150 V(BR)CBO ICB=0.1mA 20 30 45 60 75 90 105 V V(BR)CEO ICE=0.1mA 15 25 40 55 70 85 100 V V(BR)EBO IEB=0.1mA 4.0 V ICBO VCB=10V 0.5 A ICEO VCE=10V 1.... See More ⇒
0.2. Size:113K china
3cg201.pdf
3CG201 PNP A B C D PCM TA=25 1 W ICM 1 A Tjm 175 Tstg -55 150 V(BR)CEO ICE=0.1mA 60 100 140 180 V V(BR)EBO IEB=0.1mA 4.0 V ICEO VCE=30V 1.0 A IC=500mA VCEsat 0.5 V IB=50mA VCE=5V hFE 25 270 IC=200mA VCE=10V ... See More ⇒
0.5. Size:130K china
3cg21.pdf
3CG21 PNP A B C D E PCM Tc=75 300 mW ICM 50 mA Tjm 150 Tstg -55 150 ICB=0.05m V(BR)CBO 15 25 40 55 70 V A V(BR)CEO ICE=0.05mA 15 25 40 55 70 V V(BR)EBO IEB=0.05mA 4.0 V ICBO VCB=10V 0.5 A ICEO VCE=10V 1.0 A I... See More ⇒
0.6. Size:116K china
3cg2907.pdf
3CG2907 PNP PCM 400 mW ICM 600 mA Tjm 175 Tstg -55 150 V(BR)CBO ICB=0.1mA 65 V V(BR)CEO ICE=0.1mA 60 V V(BR)EBO IEB=0.1mA 5.0 V ICBO VCB=10V 0.2 A ICEO VCE=10V 0.5 A IEBO VEB=2V 0.2 A VBEsat 1.0 IC=30mA V IB=3mA VCEsat ... See More ⇒
0.7. Size:124K china
3cg22.pdf
3CG22 PNP A B C D E F G PCM 500 mW ICM 100 mA Tjm 175 Tstg -55 150 V(BR)CBO ICB=0.1mA 20 30 40 50 65 80 95 V V(BR)CEO ICE=0.1mA 15 25 35 50 65 80 95 V V(BR)EBO IEB=0.1mA 4.0 V ICBO VCB=10V 0.1 A ICEO VCE=10V 0.1 ... See More ⇒
0.8. Size:124K china
3cg200.pdf
3CG200 PNP A B C D E F G PCM 700 mW ICM 200 mA Tjm 175 Tstg -55 150 V(BR)CBO ICB=0.05mA 20 30 40 50 60 70 80 V V(BR)CEO ICE=0.05mA 15 20 30 40 50 60 70 V V(BR)EBO IEB=0.05mA 4.0 V ICBO VCB=10V 0.2 A ICEO VCE=10V ... See More ⇒
0.9. Size:97K foshan
3cg298.pdf
2SA298(3CG298) PNP /SILICON PNP TRANSISTOR , /Purpose Audio frequency general purpose, driver stage amplifier applications. , , h , FE Features High voltage and high current, excellent h linearity, low noise. FE /Absolute maximum ratings(Ta=25 )... See More ⇒
0.10. Size:176K lzg
3cg2048.pdf
2SA2048(3CG2048) PNP /SILICON PNP RANSISTOR , Purpose Small signal low frequency amplifier, high speed switching. 2SC5730(3DG5730) Features High speed switching, low saturation voltage, complements the 2SC5730(3DG5730). /Absolute maximum ratings(Ta=2... See More ⇒
Detailed specifications: 3CG180, 3CG182, 3CG1955, 3CG1979S, 3CG1980, 3CG1980M, 3CG1981, 3CG1981M, 2SC4793, 3CG200, 3CG201, 3CG2048, 3CG21, 3CG22, 3CG23, 3CG2905, 3CG2907
Keywords - 3CG2 pdf specs
3CG2 cross reference
3CG2 equivalent finder
3CG2 pdf lookup
3CG2 substitution
3CG2 replacement
