3CG2 Datasheet, Equivalent, Cross Reference Search
Type Designator: 3CG2
Material of Transistor: Si
Polarity: PNP
Maximum Collector Power Dissipation (Pc): 0.5 W
Maximum Collector-Base Voltage |Vcb|: 20 V
Maximum Collector-Emitter Voltage |Vce|: 15 V
Maximum Emitter-Base Voltage |Veb|: 4 V
Maximum Collector Current |Ic max|: 0.1 A
Max. Operating Junction Temperature (Tj): 175 °C
Transition Frequency (ft): 100 MHz
Forward Current Transfer Ratio (hFE), MIN: 25
Noise Figure, dB: -
Package: TO18
3CG2 Transistor Equivalent Substitute - Cross-Reference Search
3CG2 Datasheet (PDF)
3cg2.pdf
3CG2 PNP A B C D E F G PCM 500 mW ICM 100 mA Tjm 175 Tstg -55~150 V(BR)CBO ICB=0.1mA 20 30 40 50 60 70 80 V V(BR)CEO ICE=0.1mA 15 20 30 40 50 60 70 V V(BR)EBO IEB=0.1mA 4.0 V ICBO VCB=10V 0.2 A ICEO VCE=10V 0.5
3cg23.pdf
3CG23 PNP A B C D E F G PCM 700 mW ICM 150 mA Tjm 175 Tstg -55~150 V(BR)CBO ICB=0.1mA 20 30 45 60 75 90 105 V V(BR)CEO ICE=0.1mA 15 25 40 55 70 85 100 V V(BR)EBO IEB=0.1mA 4.0 V ICBO VCB=10V 0.5 A ICEO VCE=10V 1.
3cg201.pdf
3CG201 PNP A B C D PCM TA=25 1 W ICM 1 A Tjm 175 Tstg -55~150 V(BR)CEO ICE=0.1mA 60 100 140 180 V V(BR)EBO IEB=0.1mA 4.0 V ICEO VCE=30V 1.0 A IC=500mA VCEsat 0.5 V IB=50mA VCE=5V hFE 25~270 IC=200mA VCE=10V
3cg2907a.pdf
3CG2907A(BT2907A) PNP PCM TA=25 225 mW ICM 600 mA Tjm 150 Tstg -55~150 V(BR)CBO ICB=0.1mA 60 V V(BR)CEO ICE=0.1mA 60 V V(BR)EBO IEB=0.1mA 5.0 V ICBO VCB=50V 0.01 A IEBO VEB=5.0V 0.1 A VBEsat 0.4 IC=150mA V IB=15mA VCEsat
3cg2905.pdf
3CG2905 PNP PCM TA=25 600 mW ICM 600 mA Tjm 175 Tstg -55~150 V(BR)CBO ICB=0.1mA 60 V V(BR)CEO ICE=0.1mA 40 V V(BR)EBO IEB=0.1mA 5.0 V ICBO VCB=50V 0.02 A IC=150mA VCEsat 0.4 V IB=15mA VCE=10V hFE 35 IC=1mA VCE=5V
3cg21.pdf
3CG21 PNP A B C D E PCM Tc=75 300 mW ICM 50 mA Tjm 150 Tstg -55~150 ICB=0.05mV(BR)CBO 15 25 40 55 70 V A V(BR)CEO ICE=0.05mA 15 25 40 55 70 V V(BR)EBO IEB=0.05mA 4.0 V ICBO VCB=10V 0.5 A ICEO VCE=10V 1.0 A I
3cg2907.pdf
3CG2907 PNP PCM 400 mW ICM 600 mA Tjm 175 Tstg -55~150 V(BR)CBO ICB=0.1mA 65 V V(BR)CEO ICE=0.1mA 60 V V(BR)EBO IEB=0.1mA 5.0 V ICBO VCB=10V 0.2 A ICEO VCE=10V 0.5 A IEBO VEB=2V 0.2 A VBEsat 1.0 IC=30mA V IB=3mA VCEsat
3cg22.pdf
3CG22 PNP A B C D E F G PCM 500 mW ICM 100 mA Tjm 175 Tstg -55~150 V(BR)CBO ICB=0.1mA 20 30 40 50 65 80 95 V V(BR)CEO ICE=0.1mA 15 25 35 50 65 80 95 V V(BR)EBO IEB=0.1mA 4.0 V ICBO VCB=10V 0.1 A ICEO VCE=10V 0.1
3cg200.pdf
3CG200 PNP A B C D E F G PCM 700 mW ICM 200 mA Tjm 175 Tstg -55~150 V(BR)CBO ICB=0.05mA 20 30 40 50 60 70 80 V V(BR)CEO ICE=0.05mA 15 20 30 40 50 60 70 V V(BR)EBO IEB=0.05mA 4.0 V ICBO VCB=10V 0.2 A ICEO VCE=10V
3cg298.pdf
2SA298(3CG298) PNP /SILICON PNP TRANSISTOR :,/Purpose: Audio frequency general purpose, driver stage amplifier applications. :,, h , FEFeatures: High voltage and high current, excellent h linearity, low noise. FE/Absolute maximum ratings(Ta=25)
3cg2048.pdf
2SA2048(3CG2048) PNP /SILICON PNP RANSISTOR :, Purpose: Small signal low frequency amplifier, high speed switching. 2SC5730(3DG5730) Features: High speed switching, low saturation voltage, complements the 2SC5730(3DG5730). /Absolute maximum ratings(Ta=2
Datasheet: 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .
History: 2SB1102
