3CG5 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

3CG5 PNP A B C D E F G PCM 500 mW ICM 150 mA Tjm 175 Tstg -55~150 V(BR)CBO ICB=0.1mA 20 40 60 20 40 40 60 V V(BR)CEO ICE=0.1mA 15 30 45 15 30 30 50 V V(BR)EBO IEB=0.1mA 4.0 V ICBO VCB=10V 0.5 A ICEO VCE=10V 1.0

3CG56 PNP TO-92 SOT-23 SOT-223 PCM TA=25 mW 625 350 1000 Rj-a TA>25 5.0 2.8 8.0 mW/ ICM 0.5 mA Tjm 150 Tstg -55~150 V(BR)CBO ICB=0.1mA 80 V V(BR)CEO ICE=1mA 80 V ICBO IEB=0.1mA 4 A ICEO VCB=80V 0.1 A IEBO VCE=60V 0.1 A

3CG560 PNP PCM TA=25 500 mW ICM 500 mA Tjm 175 Tstg -55~150 V(BR)CBO ICB=0.1mA 450 V V(BR)CEO ICE=0.1mA 450 V V(BR)EBO IEB=0.1mA 5.0 V ICBO VCB=360V 0.1 A ICEO VCE=360V 0.1 A IEBO VEB=5.0V 0.1 A VBEsat 0.9 IC=50mA V I

3CG5T3Z PNP PCM TA=25 900 mW ICM 15 A Tjm 150 Tstg -55~150 V(BR)CBO ICB=0.1mA 50 V V(BR)CEO ICE=10mA 40 V V(BR)EBO IEB=0.1mA 7.5 V ICBO VCB=40V 20 nA IEBO VCB=6V 20 nA VBEsat 0.9 IC=2A V IB=40mA VCEsat 0.175 VCE=2V hFE

3CG5415 PNP A B C D PCM 750 mW ICM 1000 mA Tjm 175 Tstg -55~150 V(BR)CBO ICB=0.1mA 100 140 180 220 V V(BR)CEO ICE=0.1mA 100 140 180 220 V V(BR)EBO IEB=0.1mA 4.0 V ICBO VCB=30V 10 A ICEO VCE=30V 50 A IEBO VEB=2V 10 A

2SB562(3CG562) PNP /SILICON PNP TRANSISTOR : Purpose: Low frequency power amplifier. /Absolute Maximum Ratings(Ta=25) Symbol Rating Unit V -25 V CBO V -20 V CEO V -5.0 V EBO I -1.0 A C I -1.5 A cp P 900 mW C T 150 j T -55150 stg

2N5087(3CG5087) PNP /SILICON PNP TRANSISTOR 50mA Purpose:This device is designed for low noise,high gain,general purpose amplifier applications at collector currents to 50mA. /Absolute maximum ratings(Ta=25) Symbol Rating Unit V -50 V

2SA562M(3CG562M) PNP /SILICON PNP TRANSISTOR : Purpose: Audio frequency low power amplifier, driver stage amplifier, switching applications. : h , 2SC1959M(3DG1959M) FEFeatures: Excellent h linearity, complementary pair with 2SC1959M(3DG1959M). FE

2SB561(3CG561) PNP /SILICON PNP TRANSISTOR : Purpose: Low frequency power amplifier. : 2SD467(3DG467) Features: Complementary pair with 2SD467(3DG467). /Absolute Maximum Ratings(Ta=25) Symbol Rating Unit V CBO-25 V V -20 V CEO V -5.0 V EBO I -0.7 A C

2SA562TM(3CG562TM) PNP /SILICON PNP TRANSISTOR : Purpose: Audio frequency low power amplifier, driver stage amplifier, switching applications. : h ,1W , 2SC1959(3DG1959) FEFeatures: Excellent h linearity,1 watt amplifier application, complementary pair with