3CG5 Specs and Replacement

Type Designator: 3CG5

Material of Transistor: Si

Polarity: PNP

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 0.5 W

Maximum Collector-Base Voltage |Vcb|: 20 V

Maximum Collector-Emitter Voltage |Vce|: 15 V

Maximum Emitter-Base Voltage |Veb|: 4 V

Maximum Collector Current |Ic max|: 0.15 A

Max. Operating Junction Temperature (Tj): 175 °C

Electrical Characteristics

Transition Frequency (ft): 100 MHz

Forward Current Transfer Ratio (hFE), MIN: 25

Noise Figure, dB: -

Package: TO18

 3CG5 Substitution

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3CG5 datasheet

 ..1. Size:123K  china

 3cg5.pdf pdf_icon

3CG5

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 0.1. Size:129K  china

 3cg56.pdf pdf_icon

3CG5

3CG56 PNP TO-92 SOT-23 SOT-223 PCM TA=25 mW 625 350 1000 Rj-a TA>25 5.0 2.8 8.0 mW/ ICM 0.5 mA Tjm 150 Tstg -55 150 V(BR)CBO ICB=0.1mA 80 V V(BR)CEO ICE=1mA 80 V ICBO IEB=0.1mA 4 A ICEO VCB=80V 0.1 A IEBO VCE=60V 0.1 A ... See More ⇒

 0.2. Size:113K  china

 3cg560.pdf pdf_icon

3CG5

3CG560 PNP PCM TA=25 500 mW ICM 500 mA Tjm 175 Tstg -55 150 V(BR)CBO ICB=0.1mA 450 V V(BR)CEO ICE=0.1mA 450 V V(BR)EBO IEB=0.1mA 5.0 V ICBO VCB=360V 0.1 A ICEO VCE=360V 0.1 A IEBO VEB=5.0V 0.1 A VBEsat 0.9 IC=50mA V I... See More ⇒

 0.3. Size:111K  china

 3cg5t3z.pdf pdf_icon

3CG5

3CG5T3Z PNP PCM TA=25 900 mW ICM 15 A Tjm 150 Tstg -55 150 V(BR)CBO ICB=0.1mA 50 V V(BR)CEO ICE=10mA 40 V V(BR)EBO IEB=0.1mA 7.5 V ICBO VCB=40V 20 nA IEBO VCB=6V 20 nA VBEsat 0.9 IC=2A V IB=40mA VCEsat 0.175 VCE=2V hFE ... See More ⇒

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Detailed specifications: 3CG2905, 3CG2907, 3CG2907A, 3CG298, 3CG3, 3CG3906, 3CG4126, 3CG4403, 2SD2499, 3CG5087, 3CG5415, 3CG56, 3CG560, 3CG561, 3CG562, 3CG562M, 3CG562TM

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