3CG562TM . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: 3CG562TM
Material: Si
Polaridad de transistor: PNP
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 0.5 W
Tensión colector-base (Vcb): 35 V
Tensión colector-emisor (Vce): 30 V
Tensión emisor-base (Veb): 5 V
Corriente del colector DC máxima (Ic): 0.5 A
Temperatura operativa máxima (Tj): 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Transición de frecuencia (ft): 200 MHz
Capacitancia de salida (Cc): 13 pF
Ganancia de corriente contínua (hfe): 70
Paquete / Cubierta: TO92
- Selección de transistores por parámetros
3CG562TM Datasheet (PDF)
3cg562tm.pdf

2SA562TM(3CG562TM) PNP /SILICON PNP TRANSISTOR : Purpose: Audio frequency low power amplifier, driver stage amplifier, switching applications. : h ,1W , 2SC1959(3DG1959) FEFeatures: Excellent h linearity,1 watt amplifier application, complementary pair with
3cg562.pdf

2SB562(3CG562) PNP /SILICON PNP TRANSISTOR : Purpose: Low frequency power amplifier. /Absolute Maximum Ratings(Ta=25) Symbol Rating Unit V -25 V CBO V -20 V CEO V -5.0 V EBO I -1.0 A C I -1.5 A cp P 900 mW C T 150 j T -55150 stg
3cg562m.pdf

2SA562M(3CG562M) PNP /SILICON PNP TRANSISTOR : Purpose: Audio frequency low power amplifier, driver stage amplifier, switching applications. : h , 2SC1959M(3DG1959M) FEFeatures: Excellent h linearity, complementary pair with 2SC1959M(3DG1959M). FE
3cg56.pdf

3CG56 PNP TO-92 SOT-23 SOT-223 PCM TA=25 mW 625 350 1000 Rj-a TA>25 5.0 2.8 8.0 mW/ ICM 0.5 mA Tjm 150 Tstg -55~150 V(BR)CBO ICB=0.1mA 80 V V(BR)CEO ICE=1mA 80 V ICBO IEB=0.1mA 4 A ICEO VCB=80V 0.1 A IEBO VCE=60V 0.1 A
Otros transistores... 2SA1801 , 2SA1802 , 2SA1802A , 2SA1803 , 2SA1803O , 2SA1803R , 2SA1804 , 2SA1804O , 2SD2499 , 2SA1805 , 2SA1805O , 2SA1805R , 2SA1806 , 2SA181 , 2SA1810 , 2SA1810B , 2SA1810C .
History: 2SA267 | 2SC2610 | 2SB736AR | KSB1017 | 2N3927 | BCW31LT3 | 2SA60
History: 2SA267 | 2SC2610 | 2SB736AR | KSB1017 | 2N3927 | BCW31LT3 | 2SA60



Liste
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