3CG857B Todos los transistores

 ..1. Size:129K  china
 3cg857b.pdf

3CG857B(BC857B) PNP PCM TA=25 250 mW ICM 200 mA Tjm 150 Tstg -55 150 V(BR)CBO ICB=0.01mA 50 V V(BR)CEO ICE=10mA 45 V V(BR)EBO IEB=0.001mA 5.0 V ICBO VCB=30V 15.0 A IEBO VEB=5.0V 0.1 A VBEsat 850 IC=100mA V IB=5mA VCEsat

 9.1. Size:109K  jiangsu
 3cg8551.pdf

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92L Plastic-Encapsulate Transistors TO 92L 3CG8551 TRANSISTOR (PNP) 1. EMITTER 2. COLLECTOR FEATURES General Purpose Switching Application 3. BASE Complementary to 3DG8051 MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value Unit VCBO Collector-Base Voltage -50 V VCEO Collector-Emitter Vo

 9.2. Size:553K  jilin sino
 3cg8550.pdf

 9.3. Size:184K  foshan
 3cg8550a.pdf

S8550A(3CG8550A) PNP /SILICON PNP TRANSISTOR Purpose Amplifier of portable radios in class B push-pull operation. P I , S8050A(3DG8050A) C C Features High P and I , complementary pair with S8050A(3DG8050A). C C /Absolute maximum ratings(Ta=25 ) Symbol Rati

 9.4. Size:136K  foshan
 3cg8550m s8550m.pdf

S8550M(3CG8550M) PNP /SILICON PNP TRANSISTOR /Purpose Power amplifier applications. S8050M(3DG8050M) /Features Complementary pair with S8050M(3DG8050M). /Absolute maximum ratings(Ta=25 ) Symbol Rating Unit V -40 V CBO V -25 V CEO V -6.0 V EBO I -800 mA

 9.5. Size:221K  foshan
 3cg8550.pdf

S8550(3CG8550) PNP /SILICON PNP TRANSISTOR Purpose Amplifier of portable radios in class B push-pull operation. P I , S8050(3DG8050) C C Features High P and I , complementary pair with S8050(3DG8050). C C /Absolute maximum ratings(Ta=25 ) Symbol Rating Uni

 9.6. Size:389K  lzg
 3cg854s.pdf

2SA854S(3CG854S) PNP /SILICON PNP TRANSISTOR Purpose General power amplifier applications. , , 2SC1741S(3DG1741S) Features Large I , Low V ,complements the 2SC1741S(3DG1741S). C CE(sat) /Absolute maximum ratings(Ta=25 ) Symbol Rating Unit V -40