3CG857B . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

3CG857B(BC857B) PNP PCM TA=25 250 mW ICM 200 mA Tjm 150 Tstg -55~150 V(BR)CBO ICB=0.01mA 50 V V(BR)CEO ICE=10mA 45 V V(BR)EBO IEB=0.001mA 5.0 V ICBO VCB=30V 15.0 A IEBO VEB=5.0V 0.1 A VBEsat 850 IC=100mA V IB=5mA VCEsat

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92L Plastic-Encapsulate Transistors TO 92L 3CG8551 TRANSISTOR (PNP) 1. EMITTER 2. COLLECTOR FEATURES General Purpose Switching Application 3. BASE Complementary to 3DG8051 MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value UnitVCBO Collector-Base Voltage -50 V VCEO Collector-Emitter Vo

PNP PNP EPITAXIAL SILICON TRANSISTOR R3CG8550 MAIN CHARACTERISTICS Package I -1.5A CV -25V CEOP 1W C APPLICATIONS High frequency switching power supply High frequency power transform Commonly power amplifier circuit TO-92

S8550A(3CG8550A) PNP /SILICON PNP TRANSISTOR : Purpose: Amplifier of portable radios in class B push-pull operation. :P I , S8050A(3DG8050A) C CFeatures: High P and I , complementary pair with S8050A(3DG8050A). C C/Absolute maximum ratings(Ta=25) Symbol Rati

S8550M(3CG8550M) PNP /SILICON PNP TRANSISTOR :/Purpose: Power amplifier applications. : S8050M(3DG8050M)/Features: Complementary pair with S8050M(3DG8050M). /Absolute maximum ratings(Ta=25) Symbol Rating Unit V -40 V CBO V -25 V CEO V -6.0 V EBO I -800 mA

S8550(3CG8550) PNP /SILICON PNP TRANSISTOR : Purpose: Amplifier of portable radios in class B push-pull operation. :P I , S8050(3DG8050) C CFeatures: High P and I , complementary pair with S8050(3DG8050). C C/Absolute maximum ratings(Ta=25) Symbol Rating Uni

2SA854S(3CG854S) PNP /SILICON PNP TRANSISTOR : Purpose: General power amplifier applications. :,, 2SC1741S(3DG1741S) Features: Large I , Low V ,complements the 2SC1741S(3DG1741S). C CE(sat)/Absolute maximum ratings(Ta=25) Symbol Rating Unit V -40