3CG9 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Shaanxi Qunli Electric Co., Ltd Add.:No. 1 Qunli Road,Baoji City,Shaanxi,China 3CG9PNP Silicon High Frequency Low Power Transistor Features: 1. Using epitaxy planar technology structure. High working frequency. Metallic packaging. 2. Small volume, light weight, easy installation. 3. Use for high frequency oscillation, high frequency small signal amplification, low power source adj

PNP PNP EPITAXIAL SILICON TRANSISTOR R3CG9012 MAIN CHARACTERISTICS Package I -500mA CV -20V CEOP 625mW C APPLICATIONS High frequency switching power supply High frequency power transform Commonly power amplifier circuit TO-92

2SA984(K)(BR3CG984K) Rev.C Feb.-2015 DATA SHEET / Descriptions TO-92 PNP Silicon PNP transistor in a TO-92 Plastic Package. / Features High breakdown voltage, high current, low saturation voltage. / Applications Low frequency power amplifier application

2SA937(3CG937) PNP /SILICON PNP TRANSISTOR :,,,,, Purpose: General small-signal amplifier, preamplifiers, equalizer amplifiers, RF amplifiers and oscillators, medium-speed switching. : 2SC2021(3DG2021)/Features: Complementary pair with 2SC2021(3DG2021).

2SA953(3CG953) PNP /SILICON PNP TRANSISTOR :/Purpose: Audio frequency amplifier and driver stage. :,h ,V /Features: High total power dissipation, high h and FEFE CEOhigh V . CEO/Absolute maximum ratings(Ta=25) Symbol Rating Unit

S9012(3CG9012) PNP /SILICON PNP TRANSISTOR : Purpose: Amplifier of portable radios in class B push-pull operation. :P I , h , S9013(3DG9013) C C FEFeatures: High P and I , excellent h linearity, complementary pair with S9013(3DG9013). C C FE/Absolute maximum ratings(Ta=25)

2SA965(3CG965) PNP /SILICON PNP TRANSISTOR : Purpose: Power amplifier applications, driver stage amplifier applications. : 2SC2235(3DG2235) Features: Complementary pair with 2SC2235(3DG2235). /Absolute maximum ratings(Ta=25) Symbol Rating Unit V -120 V

2SA966(3CG966) PNP /SILICON PNP TRANSISTOR :/Purpose: AF power amplifier applications. : 2SC2236(3DG2236), 3W Features: Complementary to 2SC2236(3DG2236) and 3 Watts output applications. /Absolute maximum ratings(Ta=25) Symbol Rating Unit V -30 V CBO

2SA966T(3CG966T) PNP /SILICON PNP TRANSISTOR :/Purpose: AF power amplifier applications. : 2SC2236T(3DG2236T) Features: Complementary to 2SC2236T(3DG2236T). /Absolute maximum ratings(Ta=25) Symbol Rating Unit V -30 V CBO V -30 V CEO V -5.0 V EBO I -1.5 A C

2SA952(3CG952) PNP /SILICON PNP TRANSISTOR :/Purpose: Output stage of portable radio and cassette type tape recorder, general purpose applications. :,h ,V /Features: High total dissipation, high h and low V . FE CE(sat)FE CE(sat)/Absolute maximum ratings(Ta=25)

2SA970(3CG970) PNP /SILICON PNP TRANSISTOR : Purpose: Low noise audio amplifier applications. : ,, Features: Low noise, high DC current gain, high breakdown voltage. /Absolute Maximum Ratings(Ta=25) Symbol Rating Unit V -120

2SB926(3CG926) PNP /SILICON PNP TRANSISTOR : Purpose: Power supplies, relay drivers, lamp drivers, electrical equipment. : FBET MBIT ,, Features: Adoption of FBET,MBIT processes, low saturation voltage, large c

2SA950(3CG950) PNP /SILICON PNP TRANSISTOR :/Purpose: Audio frequency power amplifier. : h , 1W , 2SC2120(3DG2120) FEFeatures: High h ,1W output applications, Complementary pair with 2SC2120(3DG2120). FE/Absolute maximum ratings(Ta=25) Symbol Rating Unit V -

2SA953M(3CG953M) PNP /SILICON PNP TRANSISTOR :/Purpose: Audio frequency amplifier and driver stage. :,h ,V /Features: High total power dissipation, high h and FEFE CEOhigh V . CEO/Absolute maximum ratings(Ta=25) Symbol Rating Unit