3CG9 - описание и поиск аналогов

 ..1. Size:24K  shaanxi
 3cg9.pdf 

Shaanxi Qunli Electric Co., Ltd Add. No. 1 Qunli Road,Baoji City,Shaanxi,China 3CG9 PNP Silicon High Frequency Low Power Transistor Features 1. Using epitaxy planar technology structure. High working frequency. Metallic packaging. 2. Small volume, light weight, easy installation. 3. Use for high frequency oscillation, high frequency small signal amplification, low power source adj

 0.1. Size:561K  jilin sino
 3cg9012.pdf 

 0.2. Size:310K  blue-rocket-elect
 br3cg984k.pdf 

2SA984(K)(BR3CG984K) Rev.C Feb.-2015 DATA SHEET / Descriptions TO-92 PNP Silicon PNP transistor in a TO-92 Plastic Package. / Features High breakdown voltage, high current, low saturation voltage. / Applications Low frequency power amplifier application

 0.3. Size:366K  china
 3cg937.pdf 

2SA937(3CG937) PNP /SILICON PNP TRANSISTOR , , , , , Purpose General small-signal amplifier, preamplifiers, equalizer amplifiers, RF amplifiers and oscillators, medium-speed switching. 2SC2021(3DG2021) /Features Complementary pair with 2SC2021(3DG2021).

 0.4. Size:535K  china
 3cg953.pdf 

2SA953(3CG953) PNP /SILICON PNP TRANSISTOR /Purpose Audio frequency amplifier and driver stage. ,h ,V /Features High total power dissipation, high h and FE FE CEO high V . CEO /Absolute maximum ratings(Ta=25 ) Symbol Rating Unit

 0.5. Size:217K  foshan
 3cg9012.pdf 

S9012(3CG9012) PNP /SILICON PNP TRANSISTOR Purpose Amplifier of portable radios in class B push-pull operation. P I , h , S9013(3DG9013) C C FE Features High P and I , excellent h linearity, complementary pair with S9013(3DG9013). C C FE /Absolute maximum ratings(Ta=25 )

 0.6. Size:213K  lzg
 3cg965.pdf 

2SA965(3CG965) PNP /SILICON PNP TRANSISTOR Purpose Power amplifier applications, driver stage amplifier applications. 2SC2235(3DG2235) Features Complementary pair with 2SC2235(3DG2235). /Absolute maximum ratings(Ta=25 ) Symbol Rating Unit V -120 V

 0.7. Size:230K  lzg
 3cg966.pdf 

2SA966(3CG966) PNP /SILICON PNP TRANSISTOR /Purpose AF power amplifier applications. 2SC2236(3DG2236) , 3W Features Complementary to 2SC2236(3DG2236) and 3 Watts output applications. /Absolute maximum ratings(Ta=25 ) Symbol Rating Unit V -30 V CBO

 0.8. Size:471K  lzg
 3cg966t.pdf 

2SA966T(3CG966T) PNP /SILICON PNP TRANSISTOR /Purpose AF power amplifier applications. 2SC2236T(3DG2236T) Features Complementary to 2SC2236T(3DG2236T). /Absolute maximum ratings(Ta=25 ) Symbol Rating Unit V -30 V CBO V -30 V CEO V -5.0 V EBO I -1.5 A C

 0.9. Size:259K  lzg
 3cg952.pdf 

2SA952(3CG952) PNP /SILICON PNP TRANSISTOR /Purpose Output stage of portable radio and cassette type tape recorder, general purpose applications. ,h ,V /Features High total dissipation, high h and low V . FE CE(sat) FE CE(sat) /Absolute maximum ratings(Ta=25 )

 0.10. Size:239K  lzg
 3cg970.pdf 

2SA970(3CG970) PNP /SILICON PNP TRANSISTOR Purpose Low noise audio amplifier applications. , , Features Low noise, high DC current gain, high breakdown voltage. /Absolute Maximum Ratings(Ta=25 ) Symbol Rating Unit V -120

 0.11. Size:219K  lzg
 3cg926.pdf 

2SB926(3CG926) PNP /SILICON PNP TRANSISTOR Purpose Power supplies, relay drivers, lamp drivers, electrical equipment. FBET MBIT , , Features Adoption of FBET,MBIT processes, low saturation voltage, large c

 0.12. Size:384K  lzg
 3cg950.pdf 

2SA950(3CG950) PNP /SILICON PNP TRANSISTOR /Purpose Audio frequency power amplifier. h , 1W , 2SC2120(3DG2120) FE Features High h ,1W output applications, Complementary pair with 2SC2120(3DG2120). FE /Absolute maximum ratings(Ta=25 ) Symbol Rating Unit V -

 0.13. Size:347K  lzg
 3cg953m.pdf 

2SA953M(3CG953M) PNP /SILICON PNP TRANSISTOR /Purpose Audio frequency amplifier and driver stage. ,h ,V /Features High total power dissipation, high h and FE FE CEO high V . CEO /Absolute maximum ratings(Ta=25 ) Symbol Rating Unit