3DD1 Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: 3DD1
Material: Si
Polaridad de transistor: NPN
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 10 W
Tensión colector-base (Vcb): 80 V
Tensión colector-emisor (Vce): 50 V
Tensión emisor-base (Veb): 6 V
Corriente del colector DC máxima (Ic): 1.5 A
Temperatura operativa máxima (Tj): 175 °C
CARACTERÍSTICAS ELÉCTRICAS
Ganancia de corriente contínua (hFE): 15
Encapsulados: TO3
Búsqueda de reemplazo de 3DD1
- Selecciónⓘ de transistores por parámetros
3DD1 datasheet
3dd1.pdf
3DD1(3DF1) NPN A B C D E F G PCM Tc=25 10 W ICM 1.5 A Tjm 175 Tstg -55 175 V(BR)CBO ICB=5mA 80 150 250 350 450 600 800 V V(BR)CEO ICE=5mA 50 100 200 250 300 400 500 V V(BR)EBO IEB=1mA 6.0 V ICEO VCE=30V 0.2 mA
3dd1555.pdf
CASE-RATED BIPOLAR TRANSISTOR FOR TYPE 3DD1555 FOR LOW FREQUENCY R 3DD1555 Package MAIN CHARACTERISTICS TO-3P(H)IS 1500 V BV CBO 5 A I C 5 V(max) V CE(sat) t 1 s(max) f APPLICATIONS Horizontal deflection output for color TV. 1 2 3 FEATURES
3dd13005.pdf
3DD13005 4A , 700V NPN Plastic-Encapsulated Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen & lead-free FEATURES TO-220J Power switching applications ABSOLUTE MAXIMUM RATINGS (TA=25 C unless otherwise specified) Parameter Symbol Rating Unit Collector to Base Voltage V 700 V CBO Collector to Emitter Voltage VCEO 400 V
3dd13003b.pdf
3DD13003B 1.5A , 700V NPN Plastic-Encapsulated Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen & lead-free FEATURES TO-92 Power switching applications A D Millimeter REF. Min. Max. B A 4.40 4.70 B 4.30 4.70 C 12.70 - D 3.30 3.81 Collector E 0.36 0.56 2 E C F 0.36 0.51 F G 1.27 TYP. H 1.10 - J 2
3dd13001.pdf
3DD13001 0.2A , 600V NPN Plastic-Encapsulated Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen & lead-free FEATURES TO-92 Power switching applications A D B CLASSIFICATION OF hFE(1) Product-Rank 3DD13001-A 3DD13001-B E C F Range 17 23 20 26 G H 1Base 1 1 1 3 2Collector 2 2 2 Emitter 3Emitter 3 3 3
3dd13001b.pdf
JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD TO-92 Plastic-Encapsulate Transistors 3DD13001B TRANSISTOR (NPN) FEATURE power switching applications TO-92 1. BASE 2. COLLECTOR 3. EMITTER Equivalent Circuit 13001 13001=Device code S 6B S 6B=Code 1 ORDERING INFORMATION Part Number Package Packing Method Pack Quantity 3DD13001B TO-92 Bulk 1000pcs/Bag B-TA
3dd13003b.pdf
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92 Plastic-Encapsulate Transistors TO-92 3DD13003B TRANSISTOR( NPN ) 1. EMITTER 2. COLLECTOR FEATURES 3. BASE power switching applications MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value Unit VCBO Collector-Base Voltage 700 V VCEO Collector-Emitter Voltage 400 V VEBO Emitter-Base Vol
3dd13007n36f.pdf
JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD TO-220F Plastic-Encapsulate Transistor 3DD13007N36F TRANSISTOR (NPN) TO-220F FEATURES Power switching applications 1. BASE 1 2 3 2. COLLECTOR 3. EMITTER 13007N=Device code Equivalent Circuit Solid dot=Green moldinn compound device, if none,the normal device 13007N 36F=Code 36F MAXIMUM RATINGS (Ta=25 unl
3dd13002.pdf
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-251-3L/TO-252-2L Plastic-Encapsulate Transistors 3DD13002 TRANSISTOR (NPN) TO-251-3L TO-252-2L FEATURE 1 2 3 power switching applications 1. BASE MAXIMUM RATINGS(Ta=25 unless otherwise noted) 2. COLLECTOR Symbol Parameter Value Unit VCBO Collector -Base Voltage 600 V 3. EMITTER 1 VCEO Collector-Emi
3dd13003.pdf
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-252-2L Plastic-Encapsulate Transistors 3DD13003 TRANSISTOR ( NPN ) TO-252-2L FEATURES 1. BASE Power Switching Applications 2. COLLECTOR 3. EMITTER MAXIMUM RATINGS(TA=25 unless otherwise noted) Symbol Parameter Value Unit VCBO Collector-Base Voltage 700 V VCEO Collector-Emitter Voltage 400 V VEBO Emitter-Base V
3dd13005nd66.pdf
JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD TO-220-3L Plastic-Encapsulate Transistor TO-220-3L 3DD13005ND66 TRANSISTOR (NPN) BASE 1 . FEATURES 2. COLLECTOR Power switching applic
3dd13001.pdf
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92 Plastic-Encapsulate Transistors TO-92 3DD13001 TRANSISTOR (NPN) 1. BASE 2. COLLECTOR FEATURES Power switching applications 3. EMITTER MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value Unit VCBO Collector-Base Voltage 700 V VCEO Collector-Emitter Voltage 450 V VEBO Emitter-Base Volta
3dd13003n3.pdf
JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD TO-126 Plastic-Encapsulate Transistor 3DD13003N3 TRANSISTOR (NPN) TO-126 FEATURES 1 . BASE Power switching applications Good high temperature 2. COLLECTOR Low saturation voltage 3. EMITTER High speed switching Equivalent Circuit Logo 13003N3=Device code 13003N3 ORDERING INFORMATION Part Number Package Packi
3dd13002b.pdf
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92 Plastic-Encapsulate Transistors 3DD13002B TRANSISTOR NPN TO-92 FEATURE Power Switching Applications 1.EMITTER 2. COLLECTOR 3. BASE Equivalent Circuit 13002B=Device code 13002B Solid dot=Green molding compound device, XXX if none,the normal device XXX=Code 1 ORDERING INFORMATION Par
3dd13003 to-220-3l.pdf
3DD13003(NPN) TO-220 Transistor TO-220 1. BASE 2. COLLECTOR 3. EMITTER 3 2 1 Features power switching applications MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base Voltage 700 V VCEO Collector-Emitter Voltage 400 V Dimensions in inches and (millimeters) VEBO Emitter-Base Voltage 9 V IC Collector Current -Continuou
3dd13003 to-126.pdf
3DD13003(NPN) TO-126 Transistor TO-126 1.BASE 2.COLLECTOR 3.EMITTER 3 2 1 Features power switching applications MAXIMUM RATINGS (Ta=25 unless otherwise noted) 2.500 7.400 2.900 1.100 7.800 Symbol Parameter Value Units 1.500 VCBO Collector-Base Voltage 700 V 3.900 3.000 4.100 VCEO Collector-Emitter Voltage 400 V 3.200 10.600 0.000 VEBO Emitter-Base V
3dd13005.pdf
3DD13005(NPN) TO-220 Transistor TO-220 1. BASE 2. COLLECTOR 3. EMITTER 3 2 1 Features power switching applications MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base Voltage 700 V VCEO Collector-Emitter Voltage 400 V VEBO Emitter-Base Voltage 9 V Dimensions in inches and (millimeters) IC Collector Current -Continuo
3dd13007.pdf
3DD13007(NPN) TO-220 Transistor TO-220 1.BASE 2.COLLECTOR 3.EMITTER 3 2 1 Features power switching applications MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base Voltage 700 V VCEO Collector-Emitter Voltage 400 V Dimensions in inches and (millimeters) VEBO Emitter-Base Voltage 9 V IC Collector Current -Continuous 8
3dd13003b.pdf
3DD13003B(NPN) TO-92 Bipolar Transistors TO-92 1. EMITTER 4.45 2. COLLECTOR 5.21 3. BASE 4.32 2.92 5.33 MIN Features power switching applications 3.43 MIN 2.41 2.67 MAXIMUM RATINGS (TA=25 unless otherwise noted) 3.18 2.03 4.19 Symbol Parameter Value Units 2.67 1.14 VCBO Collector-Base Voltage 700 V 1.40 2.03 2.67 VCEO Collector-Emitter Voltage 400 V
3dd13002.pdf
3DD13002(NPN) TO-251/TO-252-2L Transistor TO-251 1. BASE 2. COLLECTOR 3. EMITTER 1 2 3 Features power switching applications MAXIMUM RATINGS* TA=25 unless otherwise noted TO-252-2L Symbol Parameter Value Units VCBO Collector -Base Voltage 600 V VCEO Collector-Emitter Voltage 400 V VEBO Emitter-Base Voltage 6 V IC Collector Current -Continuous 1 A PC Collector
3dd13001.pdf
3DD13001(NPN) TO-92 Bipolar Transistors TO-92 1. BASE 4.45 5.21 2. COLLECTOR 3. EMITTER 4.32 2.92 5.33 MIN Features power switching applications 3.43 MIN 2.41 2.67 MAXIMUM RATINGS (TA=25 unless otherwise noted) 3.18 2.03 4.19 Symbol Parameter Value Units 2.67 1.14 VCBO Collector -Base Voltage 600 V 1.40 2.03 VCEO Collector-Emitter Voltage 400 V 2.67 VEB
3dd13009.pdf
3DD13009(NPN) TO-220 Transistor TO-220 1. BASE 2. COLLECTOR 3. EMITTER 3 2 1 Features power switching applications MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base Voltage 700 V VCEO Collector-Emitter Voltage 400 V VEBO Emitter-Base Voltage 9 V Dimensions in inches and (millimeters) IC Collector Current -Contin
3dd13002b.pdf
3DD13002B(NPN) TO-92 Bipolar Transistors TO-92 1. EMITTER 4.45 5.21 2. COLLECTOR 3. BASE 4.32 2.92 5.33 MIN Features power switching applications 3.43 MIN 2.41 2.67 MAXIMUM RATINGS (TA=25 unless otherwise noted) 3.18 Symbol Parameter Value Units 2.03 4.19 2.67 VCBO Collector-Base Voltage 600 V 1.14 1.40 2.03 VCEO Collector-Emitter Voltage 400 V 2.67
3dd13003b.pdf
WEITRON 3DD13003B NPN Plastic-Encapsulate Transistor P b Lead(Pb)-Free 1. EMITTER 2. COLLECTOR 3. BASE FEATURES power switching applications TO-92 MAXIMUM RATINGS (T unless otherwise noted) A=25 C Parameter Symbol Value Units Collector-Base Voltage V VCBO 700 Collector-Emitter Voltage V VCEO 400 Emitter-Base Voltage 9 V VEBO A Collector Current -Continuous IC 1.5 Col
3dd13002b.pdf
3DD13002B Switch Mode NPN Transistors TO-92 1. EMITTER 1 2 2. COLLECTOR 3 3. BASE ABSOLUTE MAXIMUM RATINGS (Ta=25 C) Rating Symbol Value Unit Collector-Emitter Voltage V CEO 400 Vdc Collector-Base Voltage VCBO 600 Vdc Emitter-Base VOltage VEBO 6.0 Vdc Collector Current IC 1.0 Adc PD 1.0 Total Device Dissipation T =25 C W A Junction Temperature T 150 j C Storage, Tempera
3dd13007k.pdf
NPN HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR R 3DD13007K MAIN CHARACTERISTICS Package I 8A C V 400V CEO P (TO-220C) 80W C APPLICATIONS Energy-saving ligh Electronic ballasts High frequency switching power supply
3dd13003a.pdf
NPN HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR R 3DD13003A MAIN CHARACTERISTICS Package I 1.5A C V 450V CEO P (TO-92) 1W C P (DPAK/IPAK) 10W C P (TO-126) 20W C P (TO-220) 40W C TO-92-FJ TO-126 APPLICATIONS TO-220 IPAK Battery changer Electronic ballast
3dd13005d.pdf
NPN HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR R 3DD13005D MAIN CHARACTERISTICS Package I 4A C V 400V CEO P (TO-126/IPAK/IPAK-S3) 40W C P (TO-220/TO-220-S1) 75W C APPLICATIONS Energy-saving light Electronic ballasts High frequency swit
3dd13003v1d.pdf
NPN MIDDLING VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR R 3DD13003V1D APPLICATIONS Package Energy-saving ligh Electronic ballasts Electronic transformer Commonly power amplifier circuit FEATURES M
3dd13007md.pdf
NPN HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR R 3DD13007MD MAIN CHARACTERISTICS Package I 8A C V 400V CEO P (TO-220HF/220MF-K1) 45W C P (TO-220C/262/263) 80W C TO-220C TO-220C-S1 APPLICATIONS Energy-saving light Electronic ballasts High frequency swit
3dd13005ed.pdf
NPN HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR R 3DD13005ED MAIN CHARACTERISTICS Package I 4A C V 450V CEO P (IPAK/TO-126/126F/220HF) 40W C P (DPAK) 50W C P (TO-220/220C/262/263) 75W C TO-220C-S1 TO-220C TO-220 APPLICATIONS Energy-saving light Electronic ba
3dd13009e.pdf
NPN HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR R 3DD13009E MAIN CHARACTERISTICS Package I 12A C V 400V CEO P (TO-220C) 100W C P (TO-3PB) 120W C TO-220C-S1 TO-220C APPLICATIONS Energy-saving ligh Electronic ballasts High fre
br3dd13005p8f.pdf
MJE13005P8(BR3DD13005P8F) Rev.C Feb.-2015 DATA SHEET / Descriptions TO-220F NPN Silicon NPN transistor in a TO-220F Plastic Package. / Features , High voltage capability, high speed switching. / Applications High fr
br3dd13007x9p.pdf
MJE13007X9(BR3DD13007X9P) Rev.C Feb.-2015 DATA SHEET / Descriptions TO-3P NPN Silicon NPN Transistor in a TO-3P Plastic Package. / Features High Speed Switching / Applications High frequency electronic lighting, switching power supply applications.
br3dd13007v9p.pdf
MJE13007V9(BR3DD13007V9P) Rev.C Feb.-2015 DATA SHEET / Descriptions TO-3P NPN Silicon NPN Transistor in a TO-3P Plastic Package. / Features High Speed Switching / Applications High frequency electronic lighting ballast applications. / Equivalent Circuit
br3dd13007hv7r.pdf
MJE13007HV7(BR3DD13007HV7R) Rev.C Feb.-2015 DATA SHEET / Descriptions TO-220 NPN Silicon NPN transistor in a TO-220 Plastic Package. / Features , High voltage capability, high speed switching. / Applications High frequency electronic light
br3dd13003vk1k.pdf
MJE13003VK1(BR3DD13003VK1K) Rev.C Feb.-2015 DATA SHEET / Descriptions TO-92 NPN Silicon NPN transistor in a TO-92 Plastic Package. / Features High Voltage Capability High Speed Switching. / Applications 110V Suitable for 110V circuit mode, fluore
br3dd13002dg1k.pdf
MJE13002DG1(BR3DD13002DG1K) Rev.C Feb.-2015 DATA SHEET / Descriptions TO-92 NPN Silicon NPN transistor in a TO-92 Plastic Package. / Features High Voltage Capability High Speed Switching. / Applications High freque
br3dd13002e1k.pdf
MJE13002E1(BR3DD13002E1K) Rev.C Feb.-2015 DATA SHEET / Descriptions TO-92 NPN Silicon NPN transistor in a TO-92 Plastic Package. / Features High Voltage Capability High Speed Switching. / Applications High frequenc
br3dd13009x8f.pdf
MJE13009X8(BR3DD13009X8F) Rev.C Feb.-2015 DATA SHEET / Descriptions TO-220F NPN Silicon NPN transistor in a TO-220F Plastic Package. / Features , High voltage capability, high speed switching. / Applications High frequency electronic lighting ballast applications.
br3dd13007x7r.pdf
MJE13007X7(BR3DD13007X7R) Rev.C Feb.-2015 DATA SHEET / Descriptions TO-220 NPN Silicon NPN transistor in a TO-220 Plastic Package. / Features , High voltage capability, high speed switching. / Applications High frequency electronic lightin
br3dd13005p7r.pdf
MJE13005P7(BR3DD13005P7R) Rev.C Feb.-2015 DATA SHEET / Descriptions TO-220 NPN Silicon NPN transistor in a TO-220 Plastic Package. / Features , High voltage capability, high speed switching. / Applications High frequency electronic lightin
br3dd13009x7r.pdf
MJE13009X7(BR3DD13009X7R) Rev.C Feb.-2015 DATA SHEET / Descriptions TO-220 NPN Silicon NPN transistor in a TO-220 Plastic Package. / Features , High voltage capability, high speed switching. / Applications High frequency electronic lighting ballast applications .
br3dd13007x8f.pdf
MJE13007X8(BR3DD13007X8F) Rev.C Feb.-2015 DATA SHEET / Descriptions TO-220F NPN Silicon NPN transistor in a TO-220F Plastic Package. / Features , High voltage capability, high speed switching. / Applications High frequency electronic light
br3dd13009x9p.pdf
MJE13009X9(BR3DD13009X9P) Rev.C Feb.-2015 DATA SHEET / Descriptions TO-3P NPN Silicon NPN Transistor in a TO-3P Plastic Package. / Features High Speed Switching / Applications High frequency electronic lighting ballast applications. / Equivalent Circuit
br3dd13005t8f.pdf
MJE13005T8(BR3DD13005T8F) Rev.C Feb.-2015 DATA SHEET / Descriptions TO-220F NPN Silicon NPN transistor in a TO-220F Plastic Package. / Features , High voltage capability, high speed switching. / Applications High frequency electronic light
br3dd13005lp7r.pdf
MJE13005LP7(BR3DD13005LP7R) Rev.C Feb.-2015 DATA SHEET / Descriptions TO-220 NPN Silicon NPN transistor in a TO-220 Plastic Package. / Features , High voltage capability, high speed switching. / Applications High frequency electronic light
br3dd13003vk7r.pdf
MJE13003VK7(BR3DD13003VK7R) Rev.C Feb.-2015 DATA SHEET / Descriptions TO-220 NPN Silicon NPN transistor in a TO-220 Plastic Package. / Features RoHS High voltage capability, high speed switching, wide soa, RoHS compliant. / Applications 110V
3dd13005 c9d.pdf
NPN R 3DD13005 C9D 3DD13005 C9D NPN VCEO 400 V IC 4 A Ptot TC=25 75 W
3dd13005 n8d.pdf
NPN R 3DD13005 N8D 3DD13005 N8D NPN VCEO 400 V IC 4 A Ptot TC=25 75 W
3dd13001a1.pdf
NPN R 3DD13001 A1 3DD13001 A1 NPN VCEO 400 V IC 0.25 A Ptot Ta=25 0.8 W
3dd13007 z8.pdf
NPN R 3DD13007 Z8 3DD13007 Z8 NPN VCEO 200 V IC 8 A Ptot TC=25 75 W
3dd13003m8d.pdf
NPN R 3DD13003 M8D 3DD13003 M8D NPN VCEO 400 V IC 2 A Ptot W TC=25 60
3dd13002b1-7.pdf
NPN R 3DD13002 B1-7 3DD13002 B1-7 VCEO 450 V NPN IC 0.5 A Ptot Ta=25 0.7 W
3dd13009a8.pdf
NPN R 3DD13009 A8 3DD13009 A8 NPN VCEO 400 V IC 12 A Ptot TC=25 100 W
3dd13002 b1-7.pdf
NPN R 3DD13002 B1-7 3DD13002 B1-7 VCEO 450 V NPN IC 0.5 A Ptot Ta=25 0.7 W
3dd13003f3d.pdf
NPN R 3DD13003 F3D 3DD13003 F3D VCEO 400 V NPN IC 1.5 A Ptot Tc=25 30 W
3dd13012 an.pdf
NPN R 3DD13012 AN 3DD13012 AN NPN VCEO 400 V IC 15 A Ptot TC=25 120 W
3dd13007y8.pdf
NPN R 3DD13007 Y8 3DD13007 Y8 NPN VCEO 340 V IC 7 A Ptot W TC=25 80
3dd13007 b8.pdf
NPN R 3DD13007 B8 3DD13007 B8 NPN VCEO 400 V IC 8 A Ptot W TC=25 80
3dd128a8d.pdf
NPN R 3DD128 A8D 3DD128 A8D NPN VCEO 200 V IC 5 A Ptot TC=25 60 W
3dd13007b8.pdf
NPN R 3DD13007 B8 3DD13007 B8 NPN VCEO 400 V IC 8 A Ptot W TC=25 80
3dd13003 k8.pdf
NPN R 3DD13003 K8 3DD13003 K8 NPN VCEO 400 V IC 1.8 A Ptot TC=25 60 W
3dd13007 z7.pdf
NPN R 3DD13007 Z7 3DD13007 Z7 NPN VCEO 200 V IC 8 A Ptot TC=25 50 W
3dd13003u1d.pdf
NPN R 3DD13003 U1D 3DD13003 U1D VCEO 200 V NPN IC 1.8 A Ptot Ta=25 0.8 W
3dd128 a8d.pdf
NPN R 3DD128 A8D 3DD128 A8D NPN VCEO 200 V IC 5 A Ptot TC=25 60 W
3dd13003h6d.pdf
NPN R 3DD13003 H6D 3DD13003 H6D VCEO 400 V NPN IC 1.8 A Ptot Tc=25 50 W
3dd13005 c7d.pdf
NPN R 3DD13005 C7D 3DD13005 C7D NPN VCEO 400 V IC 4 A Ptot TC=25 50 W
3dd13003u3d.pdf
NPN R 3DD13003 U3D 3DD13003 U3D VCEO 200 V NPN IC 1.8 A Ptot TC=25 30 W
3dd13003 m6d.pdf
NPN R 3DD13003 M6D 3DD13003 M6D NPN VCEO 400 V IC 2 A Ptot TC=25 50 W
3dd13005c9d.pdf
NPN R 3DD13005 C9D 3DD13005 C9D NPN VCEO 400 V IC 4 A Ptot TC=25 75 W
3dd13012an.pdf
NPN R 3DD13012 AN 3DD13012 AN NPN VCEO 400 V IC 15 A Ptot TC=25 120 W
3dd13005c8d.pdf
NPN R 3DD13005 C8D 3DD13005 C8D NPN VCEO 400 V IC 4 A Ptot TC=25 75 W
3dd13005n7d.pdf
NPN R 3DD13005 N7D 3DD13005 N7D NPN VCEO 400 V IC 4 A Ptot W TC=25 60
3dd13003h3d.pdf
R NPN 3DD13003H3D 1 3DD13003H3D NPN VCEO 400 V IC 1.8 A Ptot TC=25
3dd13009 a8.pdf
NPN R 3DD13009 A8 3DD13009 A8 NPN VCEO 400 V IC 12 A Ptot TC=25 100 W
3dd13003u6d.pdf
NPN R 3DD13003 U6D 3DD13003 U6D VCEO 200 V NPN IC 1.8 A Ptot TC=25 35 W
3dd13005 c8d.pdf
NPN R 3DD13005 C8D 3DD13005 C8D NPN VCEO 400 V IC 4 A Ptot TC=25 75 W
3dd13005c7d.pdf
NPN R 3DD13005 C7D 3DD13005 C7D NPN VCEO 400 V IC 4 A Ptot TC=25 50 W
3dd13007h8d.pdf
NPN R 3DD13007 H8D 3DD13007 H8D NPN VCEO 400 V IC 9 A Ptot W TC=25 90
3dd13001p.pdf
NPN R 3DD13001 P 3DD13001 P NPN VCEO 400 V IC 0.17 A Ptot Ta=25 0.6 W
3dd13007x1.pdf
NPN R 3DD13007 X1 3DD13007 X1 NPN VCEO 400 V IC 8 A Ptot W TC=25 80
3dd13005g3d.pdf
NPN R 3DD13005 G3D 3DD13005 G3D NPN VCEO 400 V IC 4 A Ptot W TC=25 40
3dd13007 x1.pdf
NPN R 3DD13007 X1 3DD13007 X1 NPN VCEO 400 V IC 8 A Ptot W TC=25 80
3dd13001 a1.pdf
NPN R 3DD13001 A1 3DD13001 A1 NPN VCEO 400 V IC 0.25 A Ptot Ta=25 0.8 W
3dd13005 grd.pdf
NPN R 3DD13005 GRD 3DD13005 GRD NPN VCEO 400 V IC 4 A Ptot TC=25 75 W
3dd13005 g3d.pdf
NPN R 3DD13005 G3D 3DD13005 G3D NPN VCEO 400 V IC 4 A Ptot W TC=25 40
3dd13005g8d.pdf
NPN R 3DD13005 G8D 3DD13005 G8D NPN VCEO 400 V IC 4 A Ptot W TC=25 75
3dd13003 k6.pdf
NPN R 3DD13003 K6 3DD13003 K6 NPN VCEO 400 V IC 1.8 A Ptot TC=25 50 W
3dd13003m6d.pdf
NPN R 3DD13003 M6D 3DD13003 M6D NPN VCEO 400 V IC 2 A Ptot W TC=25 50
3dd13003 f6d.pdf
NPN R 3DD13003 F6D 3DD13003 F6D VCEO 400 V NPN IC 1.5 A Ptot Tc=25 50 W
3dd13002 rud.pdf
NPN R 3DD13002 RUD 3DD13003 RUD VCEO 200 V NPN IC 1 A Ptot Ta=25 0.5 W
3dd13009x8d.pdf
NPN R 3DD13009 X8D 3DD13009 X8D VCEO 200 V NPN IC 12 A Ptot TC=25 100 W
3dd13003h8d.pdf
NPN R 3DD13003 H8D 3DD13003 H8D VCEO 400 V NPN IC 1.8 A Ptot TC=25 60 W
3dd13005c3d.pdf
NPN R 3DD13005 C3D 3DD13005 C3D NPN VCEO 400 V IC 4 A Ptot TC=25 40 W
3dd13005 n7d.pdf
NPN R 3DD13005 N7D 3DD13005 N7D NPN VCEO 400 V IC 4 A Ptot TC=25 60 W
3dd128 y8d.pdf
NPN R 3DD128 Y8D 3DD128 Y8D NPN VCEO 200 V IC 4 A Ptot TC=25 60 W
3dd13003 u1d.pdf
NPN R 3DD13003 U1D 3DD13003 U1D VCEO 200 V NPN IC 1.8 A Ptot Ta=25 0.8 W
3dd128y8d.pdf
NPN R 3DD128 Y8D 3DD128 Y8D NPN VCEO 200 V IC 4 A Ptot TC=25 60 W
3dd13005 c3d.pdf
NPN R 3DD13005 C3D 3DD13005 C3D NPN VCEO 400 V IC 4 A Ptot TC=25 40 W
3dd13005n8d.pdf
NPN R 3DD13005 N8D 3DD13005 N8D NPN VCEO 400 V IC 4 A Ptot W TC=25 75
3dd13007 h8d.pdf
NPN R 3DD13007 H8D 3DD13007 H8D NPN VCEO 400 V IC 9 A Ptot W TC=25 90
3dd13002b1d.pdf
NPN R 3DD13002 B1D 3DD13002 B1D VCEO 400 V NPN IC 0.5 A Ptot Ta=25 0.8 W
3dd13002rud.pdf
NPN R 3DD13002 RUD 3DD13003 RUD VCEO 200 V NPN IC 1 A Ptot Ta=25 0.5 W
3dd13003e6d.pdf
NPN R 3DD13003 E6D 3DD13003 E6D VCEO 400 V NPN IC 1.3 A Ptot Tc=25 40 W
3dd13005grd.pdf
NPN R 3DD13005 GRD 3DD13005 GRD NPN VCEO 400 V IC 4 A Ptot TC=25 75 W
3dd13003 m8d.pdf
NPN R 3DD13003 M8D 3DD13003 M8D NPN VCEO 400 V IC 2 A Ptot W TC=25 60
3dd13007 b8d.pdf
NPN R 3DD13007 B8D 3DD13007 B8D NPN VCEO 400 V IC 7 A Ptot TC=25 80 W
3dd13003 u3d.pdf
NPN R 3DD13003 U3D 3DD13003 U3D VCEO 200 V NPN IC 1.8 A Ptot TC=25 30 W
3dd13007 y8.pdf
NPN R 3DD13007 Y8 3DD13007 Y8 NPN VCEO 340 V IC 7 A Ptot W TC=25 80
3dd13005 g8d.pdf
NPN R 3DD13005 G8D 3DD13005 G8D NPN VCEO 400 V IC 4 A Ptot W TC=25 75
3dd103.pdf
3DD103 NPN A B C D E PCM TC=75 50 W ICM 3 A Tjm 175 Tstg -55 150 VCE=10V Rth 2 /W IC=1.5A V(BR)CBO ICB=5mA 300 600 800 1200 1500 V V(BR)CEO ICE=5mA 200 300 400 600 800 V V(BR)EBO IEB=10mA 4.0 V ICBO VCB=50V 0.1 mA ICE
3dd164.pdf
3DD164 NPN A B C D E F G PCM TC=75 100 W ICM 10 A Tjm 175 Tstg -55 150 VCE=10V Rth 1 /W IC=3A V(BR)CBO ICB=5mA 80 150 200 250 350 400 600 V V(BR)CEO ICE=5mA 50 100 150 200 250 300 400 V V(BR)EBO IEB=5mA 5.0 V ICBO VCB=5
3dd1724.pdf
3DD1724 NPN PCM TC=75 60 W ICM 5 A Tjm 175 Tstg -55 150 VCE=10V Rth 1.67 /W IC=1.5A V(BR)CBO ICB=5mA 120 V V(BR)CEO ICE=7mA 80 V V(BR)EBO IEB=10mA 10 V ICBO VCB=80V 0.1 mA ICEO VCE=50V 0.5 mA IEBO VEB=4V 0.1 mA VBEsat 1.5
3dd176.pdf
3DD175/3DD176 NPN A B C D E F G PCM TC=75 300 W ICM 30 A Tjm 175 Tstg -55 150 VCE=10V Rth 0.33 /W IC=5A V(BR)CBO ICB=5mA 80 150 200 250 350 400 600 V V(BR)CEO ICE=5mA 50 100 150 200 250 300 400 V V(BR)EBO IEB=15mA 5.0 V
3dd157.pdf
3DD157 NPN A B C D E F G PCM TC=75 30 W ICM 3 A Tjm 175 Tstg -55 150 VCE=10V Rth 3.3 /W IC=1A V(BR)CBO ICB=3mA 80 150 200 250 350 400 600 V V(BR)CEO ICE=3mA 50 100 150 200 250 300 400 V V(BR)EBO IEB=1mA 5.0 V ICBO VCB=5
3dd153.pdf
3DD153 NPN A B C D E F G PCM TC=75 10 W ICM 1.5 A Tjm 175 Tstg -55 150 VCE=10V Rth 10 /W IC=0.2A V(BR)CBO ICB=1mA 80 150 200 250 350 400 600 V V(BR)CEO ICE=1mA 50 100 150 200 250 300 400 V V(BR)EBO IEB=0.5mA 5.0 V ICBO
3dd15.pdf
3DD15 NPN A B C D E F PCM TC=75 50 W ICM 5 A Tjm 175 Tstg -55 150 VCE=10V Rth 2.0 /W IC=1A V(BR)CBO ICB 5mA 60 150 200 300 400 500 V V(BR)CEO ICE 5mA 60 100 120 200 300 350 V V(BR)EBO IEB 5mA 4.0 V ICBO VCB=50V
3dd175.pdf
3DD175/3DD176 NPN A B C D E F G PCM TC=75 300 W ICM 30 A Tjm 175 Tstg -55 150 VCE=10V Rth 0.33 /W IC=5A V(BR)CBO ICB=5mA 80 150 200 250 350 400 600 V V(BR)CEO ICE=5mA 50 100 150 200 250 300 400 V V(BR)EBO IEB=15mA 5.0 V
3dd137.pdf
3DD137(BD137) NPN PCM Tc 70 8 W ICM 2 A Tjm 150 Tstg -55 150 VCE=10V Rth 10 /W IC=0.2A V(BR)CBO ICB=0.1mA 60 V V(BR)CEO ICE=0.1mA 60 V V(BR)EBO IEB=0.1mA 5.0 V ICBO VCB=30V 0.1 A IEBO VEB=5V 0.01 A Ic=0.5A VCEsat 0.5 V
3dd122.pdf
3DD122(TIP122) NPN PCM Tc=25 65 W 5 I A 8 Tjm 150 Tstg -55 150 VCE=10V Rth 1.9 /W IC=1.5A V(BR)CBO ICB=2mA 100 V V(BR)CEO ICE=10mA 100 V V(BR)EBO IEB=1mA 5.0 V VCB= 100V 0.2 ICBO VCB= 0.5V mA BR CBO 2.0 Tc=125
3dd167.pdf
3DD167 NPN A B C D E F G PCM TC=75 150 W ICM 15 A Tjm 175 Tstg -55 150 VCE=10V Rth 0.66 /W IC=5A V(BR)CBO ICB=5mA 80 150 200 250 350 400 600 V V(BR)CEO ICE=5mA 50 100 150 200 250 300 400 V V(BR)EBO IEB=5mA 5.0 V ICBO VC
3dd159.pdf
3DD159 NPN A B C D E F G PCM TC=75 50 W ICM 5 A Tjm 175 Tstg -55 150 VCE=10V Rth 2 /W IC=1.5A V(BR)CBO ICB=3mA 80 150 200 250 350 400 600 V V(BR)CEO ICE=3mA 50 100 150 200 250 300 400 V V(BR)EBO IEB=1mA 5.0 V ICBO VCB=5
3dd101.pdf
3DD101/3DD102 NPN A B C D E F PCM TC=75 50 W ICM 5 A Tjm 175 Tstg -55 150 VCE=10V Rth 2 /W IC=1.5A V(BR)CBO ICB=3mA 100 150 200 250 300 350 V V(BR)CEO ICE=3mA 50 100 150 200 250 300 V V(BR)EBO IEB=1mA 4.0 V ICBO VCB=50V 0.
3dd102.pdf
3DD101/3DD102 NPN A B C D E F PCM TC=75 50 W ICM 5 A Tjm 175 Tstg -55 150 VCE=10V Rth 2 /W IC=1.5A V(BR)CBO ICB=3mA 100 150 200 250 300 350 V V(BR)CEO ICE=3mA 50 100 150 200 250 300 V V(BR)EBO IEB=1mA 4.0 V ICBO VCB=50V 0.
3dd14a.pdf
3DD14A(BUS14A) NPN PCM TC=25 250 W ICM 50 A Tjm 175 Tstg -55 175 V(BR)CEO ICE 5mA 450 V V(BR)EBO IEB 1mA 7.0 V IEBO VEB=9V 10 mA VBEsat 1.7 IC=16A V IB=3.2A VCEsat 1.5 VCE=10V fT IC=0.2A 7.0 MHz fo=1.0MHz
3dd155.pdf
3DD155 NPN A B C D E F G PCM TC=75 20 W ICM 2 A Tjm 175 Tstg -55 150 VCE=10V Rth 5 /W IC=0.5A V(BR)CBO ICB=1mA 80 150 200 250 350 400 600 V V(BR)CEO ICE=1mA 50 100 150 200 250 300 400 V V(BR)EBO IEB=0.5mA 5.0 V ICBO VCB
3dd162-s.pdf
3DD162-S NPN PCM Tc=25 75 W ICM 5 A Tjm 175 Tstg -55 150 VCE=10V Rth 2.0 /W Ic=1.5A 25 Tc 75 V(BR)CBO ICB=5mA 80 V V(BR)CEO ICE=5mA 80 V V(BR)EBO IEB=5mA 5.0 V ICBO VCB=80V, 50 A ICEO VCE=70V 1.0 mA IEBO VEB=5.0V 0.5 m
3dd151.pdf
3DD151 NPN A B C D E F G PCM TC=75 5 W ICM 1 A Tjm 175 Tstg -55 150 VCE=10V Rth 20 /W IC=0.1A V(BR)CBO ICB=1mA 80 150 200 250 350 400 600 V V(BR)CEO ICE=1mA 50 100 150 200 250 300 400 V V(BR)EBO IEB=0.1mA 5.0 V ICBO VCB
3dd13007.pdf
SMD r DIP Ty Trans stor SMD Type Transistor SMD Type TransistoC SMDTyppee Tra n s iis tIors Type Product specification 3DD13007 Features TO-263 Unit mm High Speed Switching +0.2 4.57-0.2 +0.1 1.27-0.1 Suitable for Switching Regulator and Motor Control +0.1 0.1max 1.27-0.1 1 3 2 +0.1 0.81-0.1 2.54 1. BASE +0.2 2.54-0.2 +0.1 +0.2 5.08-0.1 0.4-0.2 2. COLLE
3dd13002.pdf
SMD Type Transistors NPN Transistors 3DD13002 1.70 0.1 Features Collector Current Capability IC=1A Collector Emitter Voltage VCEO=400V Power Switching Applications 0.42 0.1 0.46 0.1 1.Base 2.Collector 3.Emitter Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector - Base Voltage VCBO 600 Collector - Emitter Voltage VCEO 400 V Emitt
3dd13003.pdf
SMD Type Transistors NPN Transistors 3DD13003 1.70 0.1 Features Collector Current Capability IC=1.5A Collector Emitter Voltage VCEO=400V 0.42 0.1 0.46 0.1 Power Switching Applications 1.Base 2.Collector 3.Emitter Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector - Base Voltage VCBO 700 Collector - Emitter Voltage VCEO 400 V Emi
3dd13001.pdf
SMD Type Transistors NPN Transistors 3DD13001 Features 1.70 0.1 Collector-emitter Voltage V(BR)CEO=400V Collector Current IC=0.2A 0.42 0.1 0.46 0.1 1.Base 2.Collector 3.Emitter Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector-Base Voltage VCBO 600 V Collector-Emitter Voltage VCEO 400 V Emitter-Base Voltage VEBO 7 V Collector Current -
3dd11.pdf
Shaanxi Qunli Electric Co., Ltd Add. No. 1 Qunli Road,Baoji City,Shaanxi,China 3DD11 NPN Silicon Low Frequency High Power Transistor Features 1. Using triple-diffusion process.Excellent capacity in anti-burnout.Excellent second breakdown capacity. 2. Good temperature stability.Excellent thermal fatigue capability. 3. Implementation of standards QZJ840611 4. Use for Low-speed swit
3dd10.pdf
Shaanxi Qunli Electric Co., Ltd Add. No. 1 Qunli Road,Baoji City,Shaanxi,China 3DD10, 3DD11 NPN Silicon Low Frequency High Power Transistor Features 1. Using triple-diffusion process.Excellent capacity in anti-burnout.Excellent second breakdown capacity. 2. Good temperature stability.Excellent thermal fatigue capability. 2. Implementation of standards GJB33 A-97, QZJ840611A, QZJ84
3dd104.pdf
Shaanxi Qunli Electric Co., Ltd Add. No. 1 Qunli Road,Baoji City,Shaanxi,China 3DD104 NPN Silicon Low Frequency High Power Transistor Features 1. Using triple-diffusion process.Excellent capacity in anti-burnout.Excellent second breakdown capacity. 2. Good temperature stability.Excellent thermal fatigue capability. 3. Implementation of standards GJB33 A-97 4. Use for Low-speed sw
3dd171.pdf
Shaanxi Qunli Electric Co., Ltd Add. No. 1 Qunli Road,Baoji City,Shaanxi,China 3DD171(172), 3DD175(176) NPN Silicon Low Frequency High Power Transistor Features 1. Using triple-diffusion process.Excellent capacity in anti-burnout.Excellent second breakdown capacity. 2. Good temperature stability.Excellent thermal fatigue capability. 3. Implementation of standards GJB33 A-97 4. U
3dd162.pdf
Shaanxi Qunli Electric Co., Ltd Add. No. 1 Qunli Road,Baoji City,Shaanxi,China 3DD162(3DD163) NPN Silicon Low Frequency High Power Transistor Features 1. Using triple-diffusion process.Excellent capacity in anti-burnout.Excellent second breakdown capacity. 2. Good temperature stability.Excellent thermal fatigue capability. 3. Implementation of standards GJB33 A-97, QZJ840611A, QZJ8
3dd12.pdf
Shaanxi Qunli Electric Co., Ltd Add. No. 1 Qunli Road,Baoji City,Shaanxi,China 3DD12 NPN Silicon Low Frequency High Power Transistor Features 1. Using triple-diffusion process.Excellent capacity in anti-burnout.Excellent second breakdown capacity. 2. Good temperature stability.Excellent thermal fatigue capability. 3. Implementation of standards QZJ840611 4. Use for Low-speed swit
3dd13009a8.pdf
NPN R 3DD13009 A8 3DD13009 A8 NPN VCEO 400 V IC 12 A Ptot TC=25 100 W
3dd13003h6d.pdf
NPN R 3DD13003 H6D 3DD13003 H6D VCEO 400 V NPN IC 1.8 A Ptot Tc=25 50 W
3dd13005c7d.pdf
NPN R 3DD13005 C7D 3DD13005 C7D NPN VCEO 400 V IC 4 A Ptot TC=25 50 W
3dd13007x1.pdf
NPN R 3DD13007 X1 3DD13007 NPN VCEO 400 V IC 8 A Ptot TC=25
3dd13002b1.pdf
NPN R 3DD13002 B1 3DD13002 B1 NPN VCEO 400 V IC 0.5 A Ptot Ta=25 0.8 W
3dd13003e6d.pdf
NPN R 3DD13003 E6D 3DD13003 E6D VCEO 400 V NPN IC 1.3 A Ptot Tc=25 40 W
3dd13005grd.pdf
NPN R 3DD13005 GRD 3DD13005 GRD NPN VCEO 400 V IC 4 A Ptot TC=25 75 W
3dd13009an.pdf
3DD13009AN NPN Main Characteristics VCEO 400 V IC 12 A Ptot TC=25 120 W Applications Energy-saving light Electronic lamp ballasts Electronic transformer High frequency switching power supply TO-3P Commonly power am
3dd104e.pdf
INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor 3DD104E DESCRIPTION With TO-3 packaging Large collector current Low collector saturation voltage High power dissipation Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use in DC-DC converter Driver of solenoid or motor ABSOLUTE
3dd13009k.pdf
isc Silicon NPN Power Transistor 3DD13009K DESCRIPTION High breakdown voltage High switching speed High current capability Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Energy-saving ligh Electronic ballasts High frequency switching power supply High frequency power transform ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYM
3dd104c.pdf
INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor 3DD104C DESCRIPTION With TO-3 packaging Large collector current Low collector saturation voltage High power dissipation Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use in DC-DC converter Driver of solenoid or motor ABSOLUTE
3dd101b.pdf
INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor 3DD101B DESCRIPTION With TO-3 packaging Large collector current Low collector saturation voltage High power dissipation Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use in DC-DC converter Driver of solenoid or motor ABSOLUTE
3dd167e.pdf
INCHANGE Semiconductor isc Silicon NPN Power Transistor 3DD167E DESCRIPTION With TO-3 packaging Large collector current Low collector saturation voltage High power dissipation Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use in DC-DC converter Driver of solenoid or motor ABSOLUTE MAXIMUM RATINGS(T =25 )
3dd104d.pdf
INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor 3DD104D DESCRIPTION With TO-3 packaging Large collector current Low collector saturation voltage High power dissipation Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use in DC-DC converter Driver of solenoid or motor ABSOLUTE
3dd159f.pdf
INCHANGE Semiconductor isc Silicon NPN Power Transistor 3DD159F DESCRIPTION With TO-3 packaging Large collector current Low collector saturation voltage High power dissipation Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use in DC-DC converter Driver of solenoid or motor ABSOLUTE MAXIMUM RATINGS(T =25 )
3dd159c.pdf
INCHANGE Semiconductor isc Silicon NPN Power Transistor 3DD159C DESCRIPTION With TO-3 packaging Large collector current Low collector saturation voltage High power dissipation Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use in DC-DC converter Driver of solenoid or motor ABSOLUTE MAXIMUM RATINGS(T =25 )
3dd100e.pdf
INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor 3DD100E DESCRIPTION With TO-66 packaging Large collector current Low collector saturation voltage High power dissipation Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use in DC-DC converter Driver of solenoid or motor ABSOLUTE
3dd15d.pdf
isc Silicon NPN Power Transistor 3DD15D DESCRIPTION Collector-Emitter Breakdown Voltage- V = 200V(Min.) (BR)CEO DC Current Gain- h = 30 250(Min.)@I = 2A FE C Collector-Emitter Saturation Voltage- V )= 1.5V(Max)@ I = 2.5A CE(sat C Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for B&W TV horizontal output , r
3dd101e.pdf
INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor 3DD101E DESCRIPTION With TO-3 packaging Large collector current Low collector saturation voltage High power dissipation Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use in DC-DC converter Driver of solenoid or motor ABSOLUTE
3dd167d.pdf
INCHANGE Semiconductor isc Silicon NPN Power Transistor 3DD167D DESCRIPTION With TO-3 packaging Large collector current Low collector saturation voltage High power dissipation Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use in DC-DC converter Driver of solenoid or motor ABSOLUTE MAXIMUM RATINGS(T =25 )
3dd102a.pdf
isc Silicon NPN Power Transistor 3DD102A DESCRIPTION Collector-Emitter Breakdown Voltage- V = 100V(Min.) (BR)CEO DC Current Gain- h = 20(Min.)@I = 2A FE C Collector-Emitter Saturation Voltage- V )= 0.8V(Max)@ I = 2.5A CE(sat C Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for power amplifier , DC Transform
3dd100c.pdf
E Semiconductor isc Product Specification isc Silicon NPN Power Transistor 3DD100C DESCRIPTION With TO-66 packaging Large collector current Low collector saturation voltage High power dissipation Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use in DC-DC converter Driver of solenoid or motor ABSOLUTE MAXIMU
3dd100b.pdf
INCHANGE Semiconductor isc Silicon NPN Power Transistor 3DD100B DESCRIPTION With TO-66 packaging Large collector current Low collector saturation voltage High power dissipation Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use in DC-DC converter Driver of solenoid or motor ABSOLUTE MAXIMUM RATINGS(T =25 )
3dd15.pdf
isc Silicon NPN Power Transistor 3DD15 DESCRIPTION Collector-Emitter Breakdown Voltage- V = 60V(Min.) (BR)CEO DC Current Gain- h = 30 250(Min.)@I = 2A FE C Collector-Emitter Saturation Voltage- V )= 1.5V(Max)@ I = 2.5A CE(sat C Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for B&W TV horizontal output , reg
3dd101a.pdf
isc Silicon NPN Power Transistor 3DD101A DESCRIPTION Collector-Emitter Breakdown Voltage- V = 100V(Min.) (BR)CEO DC Current Gain- h = 20(Min.)@I = 2A FE C Collector-Emitter Saturation Voltage- V )= 0.8V(Max)@ I = 2.5A CE(sat C Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for power amplifier,DC-DC converter
3dd159a.pdf
INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor 3DD159A DESCRIPTION With TO-3 packaging Large collector current Low collector saturation voltage High power dissipation Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use in DC-DC converter Driver of solenoid or motor ABSOLUTE
3dd13009n.pdf
isc Silicon NPN Power Transistor 3DD13009N DESCRIPTION High breakdown voltage High switching speed High current capability Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Energy-saving ligh High frequency switching power supply High frequency power transform ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNI
3dd159d.pdf
INCHANGE Semiconductor isc Silicon NPN Power Transistor 3DD159D DESCRIPTION With TO-3 packaging Large collector current Low collector saturation voltage High power dissipation Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use in DC-DC converter Driver of solenoid or motor ABSOLUTE MAXIMUM RATINGS(T =25 )
3dd167f.pdf
INCHANGE Semiconductor isc Silicon NPN Power Transistor 3DD167F DESCRIPTION With TO-3 packaging Large collector current Low collector saturation voltage High power dissipation Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use in DC-DC converter Driver of solenoid or motor ABSOLUTE MAXIMUM RATINGS(T =25 )
3dd159e.pdf
INCHANGE Semiconductor isc Silicon NPN Power Transistor 3DD159E DESCRIPTION With TO-3 packaging Large collector current Low collector saturation voltage High power dissipation Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use in DC-DC converter Driver of solenoid or motor ABSOLUTE MAXIMUM RATINGS(T =25 )
3dd164f.pdf
isc Silicon NPN Power Transistor 3DD164F DESCRIPTION With TO-3 packaging Large collector current Low collector saturation voltage High power dissipation Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use in DC-DC converter Driver of solenoid or motor ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VAL
3dd102d.pdf
INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor 3DD102D DESCRIPTION With TO-3 packaging Large collector current Low collector saturation voltage High power dissipation Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use in DC-DC converter Driver of solenoid or motor For aud
3dd167c.pdf
INCHANGE Semiconductor isc Silicon NPN Power Transistor 3DD167C DESCRIPTION With TO-3 packaging Large collector current Low collector saturation voltage High power dissipation Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use in DC-DC converter Driver of solenoid or motor ABSOLUTE MAXIMUM RATINGS(T =25 )
3dd104a.pdf
INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor 3DD104A DESCRIPTION With TO-3 packaging Large collector current Low collector saturation voltage High power dissipation Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use in DC-DC converter Driver of solenoid or motor ABSOLUTE
3dd155.pdf
isc Silicon NPN Power Transistor 3DD155 DESCRIPTION DC Current Gain h = 15-120@I = 1A FE C Collector-Emitter Saturation Voltage V )= 1.0V(Max)@ I = 1A CE(sat C Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for B&W TV horizontal output , regulated power supply and power amplifier applications. ABSOLUTE MAXIMUM RA
3dd100d.pdf
INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor 3DD100D DESCRIPTION With TO-66 packaging Large collector current Low collector saturation voltage High power dissipation Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use in DC-DC converter Driver of solenoid or motor ABSOLUTE
3dd13009nl.pdf
isc Silicon NPN Power Transistor 3DD13009NL DESCRIPTION High breakdown voltage High switching speed High current capability Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Energy-saving ligh High frequency switching power supply High frequency power transform ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UN
3dd103e.pdf
isc Silicon NPN Power Transistor 3DD103E DESCRIPTION Collector-Emitter Breakdown Voltage- V = 800V(Min.) (BR)CEO DC Current Gain- h = 10(Min.)@I = 1.5A FE C Collector-Emitter Saturation Voltage- V )= 4V(Max)@ I = 3A CE(sat C Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for power amplifier , DC-DC converts
3dd167a.pdf
INCHANGE Semiconductor isc Silicon NPN Power Transistor 3DD167A DESCRIPTION With TO-3 packaging Large collector current Low collector saturation voltage High power dissipation Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use in DC-DC converter Driver of solenoid or motor ABSOLUTE MAXIMUM RATINGS(T =25 )
3dd13009.pdf
INCHANGE Semiconductor isc Silicon NPN Power Transistor 3DD13009 DESCRIPTION Collector Emitter Sustaining Voltage V = 400V(Min.) CEO(SUS) Collector Saturation Voltage V = 1.5 (Max) @ I = 8.0A CE(sat) C Switching Time t = 0.7 s(Max.)@ I = 8.0A f C 100% tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Desig
3dd159b.pdf
INCHANGE Semiconductor isc Silicon NPN Power Transistor 3DD159B DESCRIPTION With TO-3 packaging Large collector current Low collector saturation voltage High power dissipation Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use in DC-DC converter Driver of solenoid or motor ABSOLUTE MAXIMUM RATINGS(T =25 )
3dd167b.pdf
INCHANGE Semiconductor isc Silicon NPN Power Transistor 3DD167B DESCRIPTION With TO-3 packaging Large collector current Low collector saturation voltage High power dissipation Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use in DC-DC converter Driver of solenoid or motor ABSOLUTE MAXIMUM RATINGS(T =25 )
3dd15b.pdf
isc Silicon NPN Power Transistor 3DD15B DESCRIPTION Collector-Emitter Breakdown Voltage- V = 100V(Min.) (BR)CEO DC Current Gain- h = 30 250(Min.)@I = 2A FE C Collector-Emitter Saturation Voltage- V )= 1.5V(Max)@ I = 2.5A CE(sat C Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for B&W TV horizontal output , r
3dd101d.pdf
INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor 3DD101D DESCRIPTION With TO-3 packaging Large collector current Low collector saturation voltage High power dissipation Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use in DC-DC converter Driver of solenoid or motor ABSOLUTE
3dd102c.pdf
isc Silicon NPN Power Transistor 3DD102C DESCRIPTION Collector-Emitter Breakdown Voltage- V = 150V(Min.) (BR)CEO DC Current Gain- h = 20(Min.)@I = 2A FE C Collector-Emitter Saturation Voltage- V )= 1.5V(Max)@ I = 2.5A CE(sat C Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for power amplifier , DC Transform
3dd100a.pdf
isc Silicon NPN Power Transistor 3DD100A DESCRIPTION With TO-66 packaging Large collector current Low collector saturation voltage High power dissipation Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use in DC-DC converter Driver of solenoid or motor ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VA
3dd101c.pdf
INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor 3DD101C DESCRIPTION With TO-3 packaging Large collector current Low collector saturation voltage High power dissipation Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use in DC-DC converter Driver of solenoid or motor ABSOLUTE
3dd104b.pdf
INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor 3DD104B DESCRIPTION With TO-3 packaging Large collector current Low collector saturation voltage High power dissipation Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use in DC-DC converter Driver of solenoid or motor ABSOLUTE
Otros transistores... 3CK35, 3CK4, 3CK5323, 3CK9, 3DD03T, 3DD04T, 3DD05, 3DD05T, S8550, 3DD10, 3DD100, 3DD101, 3DD102, 3DD103, 3DD104, 3DD11, 3DD12
History: FJN4311R
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