3DD1 Datasheet and Replacement

3DD1(3DF1) NPN A B C D E F G PCM Tc=25 10 W ICM 1.5 A Tjm 175 Tstg -55~175 V(BR)CBO ICB=5mA 80 150 250 350 450 600 800 V V(BR)CEO ICE=5mA 50 100 200 250 300 400 500 V V(BR)EBO IEB=1mA 6.0 V ICEO VCE=30V 0.2 mA

NPN HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTORR3DD13007K MAIN CHARACTERISTICS Package IC 8AVCEO 400VPC(TO-220) 80W APPLICATIONS Energy-saving ligh Electronic ballasts High frequency switching power supply

CASE-RATED BIPOLAR TRANSISTOR FOR TYPE 3DD1555 FOR LOW FREQUENCY R3DD1555 Package MAIN CHARACTERISTICS TO-3P(H)IS 1500 V BV CBO5 A I C5 V(max) V CE(sat)t 1 s(max) f APPLICATIONS Horizontal deflection output for color TV. 1 2 3 FEATURES

NPN HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTORR3DD13005MD MAIN CHARACTERISTICS Package IC 4AVCEO 400VPC(TO-220HF) 35WPC(TO-220) 75W APPLICATIONS Energy-saving ligh Electronic ballasts High frequency switching power supply

3DD13005 4A , 700V NPN Plastic-Encapsulated Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen & lead-free FEATURES TO-220J Power switching applications ABSOLUTE MAXIMUM RATINGS (TA=25C unless otherwise specified) Parameter Symbol Rating Unit Collector to Base Voltage V 700 V CBOCollector to Emitter Voltage VCEO 400 V

3DD13003B 1.5A , 700V NPN Plastic-Encapsulated Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen & lead-free FEATURES TO-92 Power switching applications ADMillimeter REF. Min. Max. BA 4.40 4.70 B 4.30 4.70 C 12.70 - D 3.30 3.81 Collector E 0.36 0.56 2 E CF 0.36 0.51 FG 1.27 TYP. H 1.10 - J 2

3DD13001 0.2A , 600V NPN Plastic-Encapsulated Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen & lead-free FEATURES TO-92 Power switching applications ADBCLASSIFICATION OF hFE(1) Product-Rank 3DD13001-A 3DD13001-B E CFRange 17~23 20~26 G H1Base 1113 2Collector 222Emitter 3Emitter 333

JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD TO-92 Plastic-Encapsulate Transistors 3DD13001B TRANSISTOR (NPN)FEATURE power switching applications TO-92 1. BASE 2. COLLECTOR 3. EMITTER Equivalent Circuit 1300113001=Device code S 6B S 6B=Code 1ORDERING INFORMATION Part Number Package Packing Method Pack Quantity 3DD13001B TO-92 Bulk 1000pcs/BagB-TA

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92 Plastic-Encapsulate Transistors TO-92 3DD13003B TRANSISTOR( NPN ) 1. EMITTER 2. COLLECTOR FEATURES 3. BASE power switching applications MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value UnitVCBO Collector-Base Voltage 700 V VCEO Collector-Emitter Voltage 400 V VEBO Emitter-Base Vol

JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD TO-220F Plastic-Encapsulate Transistor 3DD13007N36F TRANSISTOR (NPN)TO-220FFEATURES Power switching applications1. BASE1232. COLLECTOR3. EMITTER 13007N=Device code Equivalent Circuit Solid dot=Green moldinn compound device, if none,the normal device 13007N36F=Code36FMAXIMUM RATINGS (Ta=25 unl

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-251-3L/TO-252-2L Plastic-Encapsulate Transistors 3DD13002 TRANSISTOR (NPN) TO-251-3L TO-252-2L FEATURE 1 2 3 power switching applications 1. BASE MAXIMUM RATINGS(Ta=25 unless otherwise noted) 2. COLLECTOR Symbol Parameter Value UnitVCBO Collector -Base Voltage 600 V 3. EMITTER 1 VCEO Collector-Emi

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-252-2L Plastic-Encapsulate Transistors 3DD13003 TRANSISTOR ( NPN ) TO-252-2L FEATURES 1. BASE Power Switching Applications 2. COLLECTOR 3. EMITTER MAXIMUM RATINGS(TA=25 unless otherwise noted) Symbol Parameter Value Unit VCBO Collector-Base Voltage 700 V VCEO Collector-Emitter Voltage 400 V VEBO Emitter-Base V

JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD TO-220-3L Plastic-Encapsulate Transistor TO-220-3L 3DD13005ND66 TRANSISTOR (NPN) BASE 1 . FEATURES 2. COLLECTOR Power switching applic

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92 Plastic-Encapsulate Transistors TO-92 3DD13001 TRANSISTOR (NPN) 1. BASE 2. COLLECTOR FEATURES Power switching applications 3. EMITTER MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value UnitVCBO Collector-Base Voltage 700 V VCEO Collector-Emitter Voltage 450 V VEBO Emitter-Base Volta

JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD TO-126 Plastic-Encapsulate Transistor3DD13003N3 TRANSISTOR (NPN)TO-126 FEATURES 1 . BASE Power switching applications Good high temperature2. COLLECTOR Low saturation voltage3. EMITTER High speed switching Equivalent Circuit Logo13003N3=Device code 13003N3ORDERING INFORMATION Part Number Package Packi

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92 Plastic-Encapsulate Transistors 3DD13002B TRANSISTORNPN TO-92 FEATURE Power Switching Applications 1.EMITTER 2. COLLECTOR 3. BASE Equivalent Circuit 13002B=Device code 13002B Solid dot=Green molding compound device, XXX if none,the normal deviceXXX=Code 1ORDERING INFORMATION Par

3DD13003(NPN) TO-220 TransistorTO-2201. BASE 2. COLLECTOR 3. EMITTER 3 21Features power switching applications MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value UnitsVCBO Collector-Base Voltage 700 VVCEO Collector-Emitter Voltage 400 V Dimensions in inches and (millimeters)VEBO Emitter-Base Voltage 9 V IC Collector Current -Continuou

3DD13003(NPN) TO-126 TransistorTO-1261.BASE 2.COLLECTOR 3.EMITTER 3 2 1Features power switching applications MAXIMUM RATINGS (Ta=25 unless otherwise noted) 2.5007.4002.9001.1007.800Symbol Parameter Value Units1.500VCBO Collector-Base Voltage 700 V 3.9003.0004.100VCEO Collector-Emitter Voltage 400 V 3.20010.6000.000VEBO Emitter-Base V

3DD13005(NPN) TO-220 TransistorTO-2201. BASE 2. COLLECTOR 3. EMITTER 3 21Features power switching applications MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value UnitsVCBO Collector-Base Voltage 700 V VCEO Collector-Emitter Voltage 400 V VEBO Emitter-Base Voltage 9 V Dimensions in inches and (millimeters)IC Collector Current -Continuo

3DD13007(NPN) TO-220 TransistorTO-2201.BASE 2.COLLECTOR 3.EMITTER 3 21Features power switching applications MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value UnitsVCBO Collector-Base Voltage 700 V VCEO Collector-Emitter Voltage 400 V Dimensions in inches and (millimeters)VEBO Emitter-Base Voltage 9 V IC Collector Current -Continuous 8

3DD13003B(NPN) TO-92 Bipolar TransistorsTO-92 1. EMITTER 4.45 2. COLLECTOR 5.21 3. BASE 4.322.92 5.33MINFeatures power switching applications 3.43MIN2.412.67MAXIMUM RATINGS (TA=25 unless otherwise noted) 3.182.034.19Symbol Parameter Value Units2.671.14VCBO Collector-Base Voltage 700 V 1.402.032.67VCEO Collector-Emitter Voltage 400 V

3DD13002(NPN) TO-251/TO-252-2L TransistorTO-2511. BASE 2. COLLECTOR 3. EMITTER 1 2 3 Features power switching applications MAXIMUM RATINGS* TA=25 unless otherwise noted TO-252-2LSymbol Parameter Value UnitsVCBO Collector -Base Voltage 600 V VCEO Collector-Emitter Voltage 400 V VEBO Emitter-Base Voltage 6 V IC Collector Current -Continuous 1 A PC Collector

3DD13001(NPN)TO-92 Bipolar TransistorsTO-92 1. BASE 4.455.21 2. COLLECTOR 3. EMITTER 4.322.92 5.33MINFeatures power switching applications 3.43MIN2.412.67MAXIMUM RATINGS (TA=25 unless otherwise noted) 3.182.034.19Symbol Parameter Value Units2.671.14VCBO Collector -Base Voltage 600 V 1.402.03VCEO Collector-Emitter Voltage 400 V 2.67VEB

3DD13009(NPN) TO-220 TransistorTO-2201. BASE 2. COLLECTOR 3. EMITTER 3 21Features power switching applications MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value UnitsVCBO Collector-Base Voltage 700 V VCEO Collector-Emitter Voltage 400 V VEBO Emitter-Base Voltage 9 V Dimensions in inches and (millimeters)IC Collector Current -Contin

3DD13002B(NPN) TO-92 Bipolar TransistorsTO-92 1. EMITTER 4.45 5.21 2. COLLECTOR 3. BASE 4.322.92 5.33MINFeatures power switching applications 3.43MIN 2.412.67MAXIMUM RATINGS (TA=25 unless otherwise noted) 3.18Symbol Parameter Value Units2.034.192.67VCBO Collector-Base Voltage 600 V 1.141.402.03VCEO Collector-Emitter Voltage 400 V 2.67

WEITRON3DD13003BNPN Plastic-Encapsulate TransistorP b Lead(Pb)-Free1. EMITTER2. COLLECTOR3. BASEFEATURES : power switching applicationsTO-92MAXIMUM RATINGS (T unless otherwise noted)A=25CParameter Symbol Value UnitsCollector-Base Voltage VVCBO 700Collector-Emitter Voltage VVCEO 400Emitter-Base Voltage 9 VVEBOACollector Current -Continuous IC 1.5Col

3DD13002BSwitch Mode NPN TransistorsTO-921. EMITTER122. COLLECTOR33. BASEABSOLUTE MAXIMUM RATINGS (Ta=25 C)Rating SymbolValue UnitCollector-Emitter Voltage VCEO 400 VdcCollector-Base Voltage VCBO 600VdcEmitter-Base VOltage VEBO6.0 VdcCollector Current IC1.0 AdcPD 1.0Total Device Dissipation T =25 C WAJunction Temperature T 150j CStorage, Tempera

NPN HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR R3DD13009K MAIN CHARACTERISTICS Package I 12A CV 400V CEOP (TO-220C) 100W CP (TO-3PB) 120W C APPLICATIONS Energy-saving ligh Electronic ballasts High frequency switching power

NPN HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR R3DD13007K MAIN CHARACTERISTICS Package I 8A CV 400V CEOP (TO-220C) 80W C APPLICATIONS Energy-saving ligh Electronic ballasts High frequency switching power supply

NPN HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR R3DD13003A MAIN CHARACTERISTICS Package I 1.5A CV 450V CEOP (TO-92) 1W CP (DPAK/IPAK) 10W CP (TO-126) 20W C P (TO-220) 40W C TO-92-FJ TO-126 APPLICATIONS TO-220 IPAK Battery changer Electronic ballast

NPN HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTORR3DD13005A MAIN CHARACTERISTICS Package IC 4AVCEO 400VPC(TO-126) 40WPC(TO-220C) 75W APPLICATIONS Energy-saving light Electronic ballasts High frequency switching power supply

NPN HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR R3DD13005D MAIN CHARACTERISTICS Package I 4A CV 400V CEOP (TO-126/IPAK/IPAK-S3) 40W CP (TO-220/TO-220-S1) 75W C APPLICATIONS Energy-saving light Electronic ballasts High frequency swit

NPN WSRs_sQvfSO{HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTORR3DD13002S ;NSpe MAIN CHARACTERISTICS \ Package IC 1.2AVCEO 400VPC(TO-92) 1WPC(TO-126(S)) 20W(u APPLICATIONS TO-92

NPN MIDDLING VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR R3DD13003V1D APPLICATIONS Package Energy-saving ligh Electronic ballasts Electronic transformer Commonly power amplifier circuit FEATURES M

NPN HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR R3DD13007MD MAIN CHARACTERISTICS Package I 8A CV 400V CEOP (TO-220HF/220MF-K1) 45W CP (TO-220C/262/263) 80W CTO-220C TO-220C-S1 APPLICATIONS Energy-saving light Electronic ballasts High frequency swit

NPN HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR R3DD13005MD MAIN CHARACTERISTICS Package I 4A CV 400V CEOP (TO-220HF) 35W CP (TO-220) 75W C APPLICATIONS Energy-saving light Electronic ballasts High frequency switching power

NPN HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR R3DD13005ED MAIN CHARACTERISTICS Package I 4A CV 450V CEOP (IPAK/TO-126/126F/220HF) 40W CP (DPAK) 50W CP (TO-220/220C/262/263) 75W CTO-220C-S1 TO-220C TO-220 APPLICATIONS Energy-saving light Electronic ba

NPN HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTORR3DD13003E1D MAIN CHARACTERISTICS Package IC 1.5AVCEO 400VPC(TO-92) 1W APPLICATIONS Energy-saving light TO-92 Electronic ballasts High frequency switching power supply

NPN HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR R3DD13009E MAIN CHARACTERISTICS Package I 12A CV 400V CEOP (TO-220C) 100W CP (TO-3PB) 120W CTO-220C-S1 TO-220C APPLICATIONS Energy-saving ligh Electronic ballasts High fre

MJE13005P8(BR3DD13005P8F) Rev.C Feb.-2015 DATA SHEET / Descriptions TO-220F NPN Silicon NPN transistor in a TO-220F Plastic Package. / Features , High voltage capability, high speed switching. / Applications High fr

MJE13007X9(BR3DD13007X9P) Rev.C Feb.-2015 DATA SHEET / Descriptions TO-3P NPN Silicon NPN Transistor in a TO-3P Plastic Package. / Features High Speed Switching / Applications High frequency electronic lighting, switching power supply applications.

MJE13009Z8(BR3DD13009Z8F) Rev.C Feb.-2015 DATA SHEET / Descriptions TO-220F NPN Silicon NPN transistor in a TO-220F Plastic Package. / Features , High voltage capability, high speed switching. / Applications High frequency electronic lighting ballast applications.

MJE13007V8(BR3DD13007V8F) Rev.C Feb.-2015 DATA SHEET / Descriptions TO-220F NPN Silicon NPN transistor in a TO-220F Plastic Package. / Features , High voltage capability, high speed switching. / Applications High frequency electronic lighting ballast applications.

MJE13007V9(BR3DD13007V9P) Rev.C Feb.-2015 DATA SHEET / Descriptions TO-3P NPN Silicon NPN Transistor in a TO-3P Plastic Package. / Features High Speed Switching / Applications High frequency electronic lighting ballast applications. / Equivalent Circuit

MJE13007HV7(BR3DD13007HV7R) Rev.C Feb.-2015 DATA SHEET / Descriptions TO-220 NPN Silicon NPN transistor in a TO-220 Plastic Package. / Features , High voltage capability, high speed switching. / Applications High frequency electronic light

MJE13003VK1(BR3DD13003VK1K) Rev.C Feb.-2015 DATA SHEET / Descriptions TO-92 NPN Silicon NPN transistor in a TO-92 Plastic Package. / Features High Voltage Capability High Speed Switching. / Applications 110V Suitable for 110V circuit mode, fluore

MJE13002DG1(BR3DD13002DG1K) Rev.C Feb.-2015 DATA SHEET / Descriptions TO-92 NPN Silicon NPN transistor in a TO-92 Plastic Package. / Features High Voltage Capability High Speed Switching. / Applications High freque

MJE13002E1(BR3DD13002E1K) Rev.C Feb.-2015 DATA SHEET / Descriptions TO-92 NPN Silicon NPN transistor in a TO-92 Plastic Package. / Features High Voltage Capability High Speed Switching. / Applications High frequenc

MJE13009X8(BR3DD13009X8F) Rev.C Feb.-2015 DATA SHEET / Descriptions TO-220F NPN Silicon NPN transistor in a TO-220F Plastic Package. / Features , High voltage capability, high speed switching. / Applications High frequency electronic lighting ballast applications.

MJE13007X7(BR3DD13007X7R) Rev.C Feb.-2015 DATA SHEET / Descriptions TO-220 NPN Silicon NPN transistor in a TO-220 Plastic Package. / Features , High voltage capability, high speed switching. / Applications High frequency electronic lightin

MJE13005P7(BR3DD13005P7R) Rev.C Feb.-2015 DATA SHEET / Descriptions TO-220 NPN Silicon NPN transistor in a TO-220 Plastic Package. / Features , High voltage capability, high speed switching. / Applications High frequency electronic lightin

MJE13009X7(BR3DD13009X7R) Rev.C Feb.-2015 DATA SHEET / Descriptions TO-220 NPN Silicon NPN transistor in a TO-220 Plastic Package. / Features , High voltage capability, high speed switching. / Applications High frequency electronic lighting ballast applications .

MJE13007X8(BR3DD13007X8F) Rev.C Feb.-2015 DATA SHEET / Descriptions TO-220F NPN Silicon NPN transistor in a TO-220F Plastic Package. / Features , High voltage capability, high speed switching. / Applications High frequency electronic light

MJE13009X9(BR3DD13009X9P) Rev.C Feb.-2015 DATA SHEET / Descriptions TO-3P NPN Silicon NPN Transistor in a TO-3P Plastic Package. / Features High Speed Switching / Applications High frequency electronic lighting ballast applications. / Equivalent Circuit

MJE13005T8(BR3DD13005T8F) Rev.C Feb.-2015 DATA SHEET / Descriptions TO-220F NPN Silicon NPN transistor in a TO-220F Plastic Package. / Features , High voltage capability, high speed switching. / Applications High frequency electronic light

MJE13005LP7(BR3DD13005LP7R) Rev.C Feb.-2015 DATA SHEET / Descriptions TO-220 NPN Silicon NPN transistor in a TO-220 Plastic Package. / Features , High voltage capability, high speed switching. / Applications High frequency electronic light

MJE13003VK7(BR3DD13003VK7R) Rev.C Feb.-2015 DATA SHEET / Descriptions TO-220 NPN Silicon NPN transistor in a TO-220 Plastic Package. / Features RoHS High voltage capability, high speed switching, wide soa, RoHS compliant. / Applications 110V

NPN R 3DD13005 C9D 3DD13005 C9D NPN VCEO 400 V IC 4 A Ptot TC=25 75 W

NPN R 3DD128F H6D 3DD128F H6D VCEO 200 V NPN IC 3.5 A Ptot TC=25 50 W

NPN R 3DD13003 H1D 3DD13003 H1D VCEO 400 V NPN IC 1.8 A Ptot Ta=25 0.8 W

NPN R 3DD13005 N8D 3DD13005 N8D NPN VCEO 400 V IC 4 A Ptot TC=25 75 W

NPN R 3DD13003 J6D 3DD13003 J6D NPN VCEO 400 V IC 2 A Ptot W TC=25 50

NPN R 3DD13001 A1 3DD13001 A1 NPN VCEO 400 V IC 0.25 A Ptot Ta=25 0.8 W

NPN R 3DD13007 Z8 3DD13007 Z8 NPN VCEO 200 V IC 8 A Ptot TC=25 75 W

NPN R 3DD13003 M8D 3DD13003 M8D NPN VCEO 400 V IC 2 A Ptot W TC=25 60

NPN R 3DD128F H8D 3DD128F H8D VCEO 200 V NPN IC 3.5 A Ptot TC=25 60 W

NPN R 3DD13002 B1-7 3DD13002 B1-7 VCEO 450 V NPN IC 0.5 A Ptot Ta=25 0.7 W

NPN R 3DD13005 B3 3DD13005 B3 NPN VCEO 450 V IC 2.5 A Ptot TC=25 40 W

NPN R 3DD13003 H8D 3DD13003 H8D VCEO 400 V NPN IC 1.8 A Ptot TC=25 60 W

NPN R 3DD13009 A8 3DD13009 A8 NPN VCEO 400 V IC 12 A Ptot TC=25 100 W

NPN R 3DD13002 B1-7 3DD13002 B1-7 VCEO 450 V NPN IC 0.5 A Ptot Ta=25 0.7 W

NPN R 3DD128F H8D 3DD128F H8D VCEO 200 V NPN IC 3.5 A Ptot TC=25 60 W

NPN R 3DD13003 F3D 3DD13003 F3D VCEO 400 V NPN IC 1.5 A Ptot Tc=25 30 W

NPN R 3DD13012 AN 3DD13012 AN NPN VCEO 400 V IC 15 A Ptot TC=25 120 W

NPN R 3DD13007 Y8 3DD13007 Y8 NPN VCEO 340 V IC 7 A Ptot W TC=25 80

NPN R 3DD13003 H1D 3DD13003 H1D VCEO 400 V NPN IC 1.8 A Ptot Ta=25 0.8 W

NPN R 3DD13007 B8 3DD13007 B8 NPN VCEO 400 V IC 8 A Ptot W TC=25 80

NPN R 3DD13003 SUD 3DD13003 SUD VCEO 200 V NPN IC 1.5 A Ptot Ta=25 0.5 W

NPN R 3DD13005 A1 3DD13005 A1 NPN VCEO 400 V IC 3 A Ptot Ta=25 0.8 W

NPN R 3DD13005 F8-1 3DD13005 F8-1 VCEO 450 V NPN IC 6 A Ptot TC=25 80 W

NPN R 3DD13003 VUD 3DD13003 VUD VCEO 200 V NPN IC 1.5 A Ptot Ta=25 0.5 W

NPN R 3DD128 A8D 3DD128 A8D NPN VCEO 200 V IC 5 A Ptot TC=25 60 W

NPN R 3DD13005 F9-1 3DD13005 F9-1 VCEO 450 V NPN IC 6 A Ptot TC=25 80 W

NPN R 3DD13007 B8 3DD13007 B8 NPN VCEO 400 V IC 8 A Ptot W TC=25 80

NPN R 3DD13009 C8 3DD13009 C8 NPN VCEO 400 V IC 12 A Ptot TC=25 100 W

NPN R 3DD13003 K8 3DD13003 K8 NPN VCEO 400 V IC 1.8 A Ptot TC=25 60 W

NPN R 3DD128F A7D 3DD128F A7D NPN VCEO 200 V IC 5 A , Ptot TC=25 50 W

NPN R 3DD13005 F7 3DD13005 F7 NPN VCEO 400 V IC 6 A Ptot TC=25 65 W

NPN R 3DD13007 Z7 3DD13007 Z7 NPN VCEO 200 V IC 8 A Ptot TC=25 50 W

NPN R 3DD13003 U1D 3DD13003 U1D VCEO 200 V NPN IC 1.8 A Ptot Ta=25 0.8 W

NPN R 3DD13005 P8D 3DD13005 P8D VCEO 400 V NPN IC 2.5 A Ptot TC=25 60 W

NPN R 3DD128 A8D 3DD128 A8D NPN VCEO 200 V IC 5 A Ptot TC=25 60 W

NPN R 3DD13003 H6D 3DD13003 H6D VCEO 400 V NPN IC 1.8 A Ptot Tc=25 50 W

NPN R 3DD13005 F8 3DD13005 F8 NPN VCEO 400 V IC 6 A Ptot TC=25 80 W

NPN R 3DD13003 X1 3DD13003 X1 NPN VCEO 400 V IC 2 A Ptot W TC=25 50

NPN R 3DD13005 C7D 3DD13005 C7D NPN VCEO 400 V IC 4 A Ptot TC=25 50 W

NPN R 3DD13012 A8 3DD13012 A8 NPN VCEO 400 V IC 15 A Ptot TC=25 100 W

NPN R 3DD13009 X8D 3DD13009 X8D VCEO 200 V NPN IC 12 A Ptot TC=25 100 W

NPN R 3DD13009 AN 3DD13009 AN NPN VCEO 400 V IC 12 A Ptot TC=25 120 W

NPN R 3DD13003 U3D 3DD13003 U3D VCEO 200 V NPN IC 1.8 A Ptot TC=25 30 W

NPN R 3DD13003 M6D 3DD13003 M6D NPN VCEO 400 V IC 2 A Ptot TC=25 50 W

NPN R 3DD13005 C9D 3DD13005 C9D NPN VCEO 400 V IC 4 A Ptot TC=25 75 W

NPN R 3DD13003 E6D 3DD13003 E6D VCEO 400 V NPN IC 1.3 A Ptot Tc=25 40 W

NPN R 3DD13009 C8 3DD13009 C8 NPN VCEO 400 V IC 12 A Ptot TC=25 100 W

NPN R 3DD13012 AN 3DD13012 AN NPN VCEO 400 V IC 15 A Ptot TC=25 120 W

NPN R 3DD13005 C8D 3DD13005 C8D NPN VCEO 400 V IC 4 A Ptot TC=25 75 W

NPN R 3DD13003 J6D 3DD13003 J6D NPN VCEO 400 V IC 2 A Ptot W TC=25 50

NPN R 3DD13003 K8 3DD13003 K8 NPN VCEO 400 V IC 1.8 A Ptot TC=25 60 W

NPN R 3DD13005 N7D 3DD13005 N7D NPN VCEO 400 V IC 4 A Ptot W TC=25 60

R NPN 3DD13003H3D1 3DD13003H3D NPN VCEO 400 V IC 1.8 A Ptot TC=25

NPN R 3DD13009 A8 3DD13009 A8 NPN VCEO 400 V IC 12 A Ptot TC=25 100 W

NPN R 3DD13003 U6D 3DD13003 U6D VCEO 200 V NPN IC 1.8 A Ptot TC=25 35 W

NPN R 3DD13005 F7 3DD13005 F7 NPN VCEO 400 V IC 6 A Ptot TC=25 65 W

NPN R 3DD13005 C8D 3DD13005 C8D NPN VCEO 400 V IC 4 A Ptot TC=25 75 W

NPN R 3DD127 D3 3DD127 D3 NPN VCEO 400 V IC 2.5 A Ptot TC=25 40 W

RNPN 3DD13003V6D 1 3DD13003V6D NPN

NPN R 3DD13003 VUD 3DD13003 VUD VCEO 200 V NPN IC 1.5 A Ptot Ta=25 0.5 W

NPN R 3DD13005 C7D 3DD13005 C7D NPN VCEO 400 V IC 4 A Ptot TC=25 50 W

NPN R 3DD13003 S1D 3DD13003 S1D VCEO 200 V NPN IC 1.5 A Ptot Ta=25 0.8 W

NPN R 3DD13003 F6D 3DD13003 F6D VCEO 400 V NPN IC 1.5 A Ptot Tc=25 50 W

NPN R 3DD13007 H8D 3DD13007 H8D NPN VCEO 400 V IC 9 A Ptot W TC=25 90

NPN R 3DD13005 F8 3DD13005 F8 NPN VCEO 400 V IC 6 A Ptot TC=25 80 W

NPN R 3DD128F H5D 3DD128F H5D VCEO 200 V NPN IC 3.5 A Ptot TC=25 50 W

NPN R 3DD13005 F9-1 3DD13005 F9-1 VCEO 450 V NPN IC 6 A Ptot TC=25 80 W

NPN R 3DD13001 P 3DD13001 P NPN VCEO 400 V IC 0.17 A Ptot Ta=25 0.6 W

NPN R 3DD13003 SUD 3DD13003 SUD VCEO 200 V NPN IC 1.5 A Ptot Ta=25 0.5 W

NPN R 3DD128F H3D 3DD128F H3D VCEO 200 V NPN IC 3.5 A Ptot TC=25 40 W

NPN R 3DD13007 X1 3DD13007 X1 NPN VCEO 400 V IC 8 A Ptot W TC=25 80

NPN R 3DD13003 V1D 3DD13003 V1D VCEO 200 V NPN IC 1.5 A Ptot Ta=25 0.8 W

NPN R 3DD13005 B3 3DD13005 B3 NPN VCEO 450 V IC 2.5 A Ptot TC=25 40 W

NPN R 3DD13005 G3D 3DD13005 G3D NPN VCEO 400 V IC 4 A Ptot W TC=25 40

NPN R 3DD13003 W3D 3DD13003 W3D VCEO 200 V NPN IC 2 A Ptot TC=25 35 W

NPN R 3DD13003 J7D 3DD13003 J7D NPN VCEO 400 V IC 2 A Ptot TC=25 50 W

NPN R 3DD13003 J8D 3DD13003 J8D NPN VCEO 400 V IC 2 A Ptot W TC=25 60

NPN R 3DD13005 P8D 3DD13005 P8D VCEO 400 V NPN IC 2.5 A Ptot TC=25 60 W

NPN R 3DD127 D5 3DD127 D5 NPN VCEO 400 V IC 2.5 A Ptot W TC=25 40

NPN R 3DD13007 X1 3DD13007 X1 NPN VCEO 400 V IC 8 A Ptot W TC=25 80

NPN R 3DD13001 A1 3DD13001 A1 NPN VCEO 400 V IC 0.25 A Ptot Ta=25 0.8 W

NPN R 3DD13003 F1D 3DD13003 F1D VCEO 400 V NPN IC 1.5 A Ptot Ta=25 0.8 W

NPN R 3DD127D 3DD127D NPN VCEO 400 V IC 2.5 A Ptot TC=25 50 W

NPN R 3DD13002 R1D 3DD13003 R1D VCEO 200 V NPN IC 1 A Ptot Ta=25 0.7 W

NPN R 3DD13003 S1D 3DD13003 S1D VCEO 200 V NPN IC 1.5 A Ptot Ta=25 0.8 W

NPN R 3DD13005 GRD 3DD13005 GRD NPN VCEO 400 V IC 4 A Ptot TC=25 75 W

NPN R 3DD13009 AN 3DD13009 AN NPN VCEO 400 V IC 12 A Ptot TC=25 120 W

NPN R 3DD13007 Z7 3DD13007 Z7 NPN VCEO 200 V IC 8 A Ptot TC=25 50 W

NPN R 3DD13005 G7D 3DD13005 G7D NPN VCEO 400 V IC 4 A Ptot W TC=25 50

NPN R 3DD13005 G3D 3DD13005 G3D NPN VCEO 400 V IC 4 A Ptot W TC=25 40

NPN R 3DD13005 G8D 3DD13005 G8D NPN VCEO 400 V IC 4 A Ptot W TC=25 75

NPN R 3DD13003 K6 3DD13003 K6 NPN VCEO 400 V IC 1.8 A Ptot TC=25 50 W

NPN R 3DD13003 U6D 3DD13003 U6D VCEO 200 V NPN IC 1.8 A Ptot TC=25 35 W

NPN R 3DD13003 M6D 3DD13003 M6D NPN VCEO 400 V IC 2 A Ptot W TC=25 50

NPN R 3DD13003 F6D 3DD13003 F6D VCEO 400 V NPN IC 1.5 A Ptot Tc=25 50 W

NPN R 3DD13002 B1 3DD13002 B1 NPN VCEO 400 V IC 0.5 A Ptot Ta=25 0.8 W

NPN R 3DD128F 3DD128F NPN VCEO 200 V IC 4 A Ptot TC=25 50 W

NPN R 3DD13002 RUD 3DD13003 RUD VCEO 200 V NPN IC 1 A Ptot Ta=25 0.5 W

NPN R 3DD13003 K6 3DD13003 K6 NPN VCEO 400 V IC 1.8 A Ptot TC=25 50 W

NPN R 3DD13003 W3D 3DD13003 W3D VCEO 200 V NPN IC 2 A Ptot TC=25 35 W

NPN R 3DD13005 G7D 3DD13005 G7D NPN VCEO 400 V IC 4 A Ptot W TC=25 50

NPN R 3DD127 D5 3DD127 D5 NPN VCEO 400 V IC 2.5 A Ptot W TC=25 40

NPN R 3DD128F H6D 3DD128F H6D VCEO 200 V NPN IC 3.5 A Ptot TC=25 50 W

NPN R 3DD13005 A7 3DD13005 A7 NPN VCEO 400 V IC 3 A Ptot W TC=25 40

NPN R 3DD13005 B5 3DD13005 B5 NPN VCEO 450 V IC 2.5 A Ptot TC=25 50 W

NPN R 3DD13009 X8D 3DD13009 X8D VCEO 200 V NPN IC 12 A Ptot TC=25 100 W

NPN R 3DD13003 H6D 3DD13003 H6D VCEO 400 V NPN IC 1.8 A Ptot Tc=25 50 W

NPN R 3DD13003 H8D 3DD13003 H8D VCEO 400 V NPN IC 1.8 A Ptot TC=25 60 W

NPN R 3DD13005 C3D 3DD13005 C3D NPN VCEO 400 V IC 4 A Ptot TC=25 40 W

NPN R 3DD13005 N7D 3DD13005 N7D NPN VCEO 400 V IC 4 A Ptot TC=25 60 W

NPN R 3DD13003 D 3DD13003 D NPN VCEO 400 V IC 2.5 A Ptot TC=25 50 W

NPN R 3DD13003 X1 3DD13003 X1 NPN VCEO 400 V IC 2 A Ptot W TC=25 50

NPN R 3DD128 Y8D 3DD128 Y8D NPN VCEO 200 V IC 4 A Ptot TC=25 60 W

NPN R 3DD13012 A8 3DD13012 A8 NPN VCEO 400 V IC 15 A Ptot TC=25 100 W

NPN R 3DD13003 U1D 3DD13003 U1D VCEO 200 V NPN IC 1.8 A Ptot Ta=25 0.8 W

NPN R 3DD128 Y8D 3DD128 Y8D NPN VCEO 200 V IC 4 A Ptot TC=25 60 W

NPN R 3DD13005 C3D 3DD13005 C3D NPN VCEO 400 V IC 4 A Ptot TC=25 40 W

NPN R 3DD13005 N8D 3DD13005 N8D NPN VCEO 400 V IC 4 A Ptot W TC=25 75

NPN R 3DD128F A7D 3DD128F A7D NPN VCEO 200 V IC 5 A , Ptot TC=25 50 W

NPN R 3DD13003 F3D 3DD13003 F3D VCEO 400 V NPN IC 1.5 A Ptot Tc=25 30 W

NPN R 3DD13003 W6D 3DD13003 W6D VCEO 200 V NPN IC 2 A Ptot TC=25 40 W

NPN R 3DD13007 H8D 3DD13007 H8D NPN VCEO 400 V IC 9 A Ptot W TC=25 90

NPN R 3DD13007 Z8 3DD13007 Z8 NPN VCEO 200 V IC 8 A Ptot TC=25 75 W

NPN R 3DD13002 B1D 3DD13002 B1D VCEO 400 V NPN IC 0.5 A Ptot Ta=25 0.8 W

NPN R 3DD13003 W6D 3DD13003 W6D VCEO 200 V NPN IC 2 A Ptot TC=25 40 W

NPN R 3DD13005 A1 3DD13005 A1 NPN VCEO 400 V IC 3 A Ptot Ta=25 0.8 W

NPN R 3DD13005 F8-1 3DD13005 F8-1 VCEO 450 V NPN IC 6 A Ptot TC=25 80 W

NPN R 3DD13002 RUD 3DD13003 RUD VCEO 200 V NPN IC 1 A Ptot Ta=25 0.5 W

NPN R 3DD128F H5D 3DD128F H5D VCEO 200 V NPN IC 3.5 A Ptot TC=25 50 W

NPN R 3DD13002 B1 3DD13002 B1 NPN VCEO 400 V IC 0.5 A Ptot Ta=25 0.8 W

NPN R 3DD13005 A3 3DD13005 A3 NPN VCEO 400 V IC 3 A Ptot W TC=25 40

NPN R 3DD13005 A7 3DD13005 A7 NPN VCEO 400 V IC 3 A Ptot W TC=25 40

NPN R 3DD127 D3 3DD127 D3 NPN VCEO 400 V IC 2.5 A Ptot W TC=25 40

NPN R 3DD13003 E6D 3DD13003 E6D VCEO 400 V NPN IC 1.3 A Ptot Tc=25 40 W

NPN R 3DD13005 GRD 3DD13005 GRD NPN VCEO 400 V IC 4 A Ptot TC=25 75 W

NPN R 3DD13003 M8D 3DD13003 M8D NPN VCEO 400 V IC 2 A Ptot W TC=25 60

NPN R 3DD13007 B8D 3DD13007 B8D NPN VCEO 400 V IC 7 A Ptot TC=25 80 W

NPN R 3DD13005 A3 3DD13005 A3 NPN VCEO 400 V IC 3 A Ptot W TC=25 40

NPN R 3DD13003 V1D 3DD13003 V1D VCEO 200 V NPN IC 1.5 A Ptot Ta=25 0.8 W

NPN R 3DD13001 P1 3DD13001 P1 NPN VCEO 400 V IC 0.2 A Ptot Ta=25 0.6 W

NPN R 3DD13003 F1D 3DD13003 F1D VCEO 400 V NPN IC 1.5 A Ptot Ta=25 0.8 W

NPN R 3DD13003 U3D 3DD13003 U3D VCEO 200 V NPN IC 1.8 A Ptot TC=25 30 W

NPN R 3DD13003 J8D 3DD13003 J8D NPN VCEO 400 V IC 2 A Ptot W TC=25 60

NPN R 3DD13007 Y8 3DD13007 Y8 NPN VCEO 340 V IC 7 A Ptot W TC=25 80

NPN R 3DD128F H3D 3DD128F H3D VCEO 200 V NPN IC 3.5 A Ptot TC=25 40 W

NPN R 3DD13005 B5 3DD13005 B5 NPN VCEO 450 V IC 2.5 A Ptot TC=25 50 W

NPN R 3DD13005 G8D 3DD13005 G8D NPN VCEO 400 V IC 4 A Ptot W TC=25 75

3DD103 NPN A B C D E PCM TC=75 50 W ICM 3 A Tjm 175 Tstg -55~150 VCE=10V Rth 2 /W IC=1.5A V(BR)CBO ICB=5mA 300 600 800 1200 1500 V V(BR)CEO ICE=5mA 200 300 400 600 800 V V(BR)EBO IEB=10mA 4.0 V ICBO VCB=50V 0.1 mA ICE

3DD99(3DD100) NPN A B C D E PCM Tc=75 20 W ICM 1.5 A Tjm 175 Tstg -55~150 VCE=10V Rth 5 /W IC=0.5A V(BR)CBO ICE=1mA 150 200 250 300 350 V V(BR)CEO ICE=1mA 100 150 200 250 300 V V(BR)EBO IEB=1mA 5.0 V ICBO VCB=50V 0.5 mA

3DD164 NPN A B C D E F G PCM TC=75 100 W ICM 10 A Tjm 175 Tstg -55~150 VCE=10V Rth 1 /W IC=3A V(BR)CBO ICB=5mA 80 150 200 250 350 400 600 V V(BR)CEO ICE=5mA 50 100 150 200 250 300 400 V V(BR)EBO IEB=5mA 5.0 V ICBO VCB=5

3DD1724 NPN PCM TC=75 60 W ICM 5 A Tjm 175 Tstg -55~150 VCE=10V Rth 1.67 /W IC=1.5A V(BR)CBO ICB=5mA 120 V V(BR)CEO ICE=7mA 80 V V(BR)EBO IEB=10mA 10 V ICBO VCB=80V 0.1 mA ICEO VCE=50V 0.5 mA IEBO VEB=4V 0.1 mA VBEsat 1.5

3DD175/3DD176 NPN A B C D E F G PCM TC=75 300 W ICM 30 A Tjm 175 Tstg -55~150 VCE=10V Rth 0.33 /W IC=5A V(BR)CBO ICB=5mA 80 150 200 250 350 400 600 V V(BR)CEO ICE=5mA 50 100 150 200 250 300 400 V V(BR)EBO IEB=15mA 5.0 V

3DD157 NPN A B C D E F G PCM TC=75 30 W ICM 3 A Tjm 175 Tstg -55~150 VCE=10V Rth 3.3 /W IC=1A V(BR)CBO ICB=3mA 80 150 200 250 350 400 600 V V(BR)CEO ICE=3mA 50 100 150 200 250 300 400 V V(BR)EBO IEB=1mA 5.0 V ICBO VCB=5

3DD153 NPN A B C D E F G PCM TC=75 10 W ICM 1.5 A Tjm 175 Tstg -55~150 VCE=10V Rth 10 /W IC=0.2A V(BR)CBO ICB=1mA 80 150 200 250 350 400 600 V V(BR)CEO ICE=1mA 50 100 150 200 250 300 400 V V(BR)EBO IEB=0.5mA 5.0 V ICBO

3DD15 NPN A B C D E F PCM TC=75 50 W ICM 5 A Tjm 175 Tstg -55~150 VCE=10V Rth 2.0 /W IC=1A V(BR)CBO ICB5mA 60 150 200 300 400 500 V V(BR)CEO ICE5mA 60 100 120 200 300 350 V V(BR)EBO IEB5mA 4.0 V ICBO VCB=50V

3DD175/3DD176 NPN A B C D E F G PCM TC=75 300 W ICM 30 A Tjm 175 Tstg -55~150 VCE=10V Rth 0.33 /W IC=5A V(BR)CBO ICB=5mA 80 150 200 250 350 400 600 V V(BR)CEO ICE=5mA 50 100 150 200 250 300 400 V V(BR)EBO IEB=15mA 5.0 V

3DD137(BD137) NPN PCM Tc70 8 W ICM 2 A Tjm 150 Tstg -55~150 VCE=10V Rth 10 /W IC=0.2A V(BR)CBO ICB=0.1mA 60 V V(BR)CEO ICE=0.1mA 60 V V(BR)EBO IEB=0.1mA 5.0 V ICBO VCB=30V 0.1 A IEBO VEB=5V 0.01 A Ic=0.5A VCEsat 0.5 V

3DD122(TIP122) NPN PCM Tc=25 65 W 5 I A 8 Tjm 150 Tstg -55~150 VCE=10V Rth 1.9 /W IC=1.5A V(BR)CBO ICB=2mA 100 V V(BR)CEO ICE=10mA 100 V V(BR)EBO IEB=1mA 5.0 V VCB= 100V 0.2 ICBO VCB= 0.5V mA BRCBO2.0 Tc=125

3DD167 NPN A B C D E F G PCM TC=75 150 W ICM 15 A Tjm 175 Tstg -55~150 VCE=10V Rth 0.66 /W IC=5A V(BR)CBO ICB=5mA 80 150 200 250 350 400 600 V V(BR)CEO ICE=5mA 50 100 150 200 250 300 400 V V(BR)EBO IEB=5mA 5.0 V ICBO VC

3DD159 NPN A B C D E F G PCM TC=75 50 W ICM 5 A Tjm 175 Tstg -55~150 VCE=10V Rth 2 /W IC=1.5A V(BR)CBO ICB=3mA 80 150 200 250 350 400 600 V V(BR)CEO ICE=3mA 50 100 150 200 250 300 400 V V(BR)EBO IEB=1mA 5.0 V ICBO VCB=5

3DD101/3DD102 NPN A B C D E F PCM TC=75 50 W ICM 5 A Tjm 175 Tstg -55~150 VCE=10V Rth 2 /W IC=1.5A V(BR)CBO ICB=3mA 100 150 200 250 300 350 V V(BR)CEO ICE=3mA 50 100 150 200 250 300 V V(BR)EBO IEB=1mA 4.0 V ICBO VCB=50V 0.

3DD101/3DD102 NPN A B C D E F PCM TC=75 50 W ICM 5 A Tjm 175 Tstg -55~150 VCE=10V Rth 2 /W IC=1.5A V(BR)CBO ICB=3mA 100 150 200 250 300 350 V V(BR)CEO ICE=3mA 50 100 150 200 250 300 V V(BR)EBO IEB=1mA 4.0 V ICBO VCB=50V 0.

3DD14A(BUS14A) NPN PCM TC=25 250 W ICM 50 A Tjm 175 Tstg -55~175 V(BR)CEO ICE5mA 450 V V(BR)EBO IEB1mA 7.0 V IEBO VEB=9V 10 mA VBEsat 1.7 IC=16A V IB=3.2A VCEsat 1.5 VCE=10V fT IC=0.2A 7.0 MHz fo=1.0MHz

3DD155 NPN A B C D E F G PCM TC=75 20 W ICM 2 A Tjm 175 Tstg -55~150 VCE=10V Rth 5 /W IC=0.5A V(BR)CBO ICB=1mA 80 150 200 250 350 400 600 V V(BR)CEO ICE=1mA 50 100 150 200 250 300 400 V V(BR)EBO IEB=0.5mA 5.0 V ICBO VCB

3DD162-S NPN PCM Tc=25 75 W ICM 5 A Tjm 175 Tstg -55~150 VCE=10V Rth 2.0 /W Ic=1.5A 25Tc75 V(BR)CBO ICB=5mA 80 V V(BR)CEO ICE=5mA 80 V V(BR)EBO IEB=5mA 5.0 V ICBO VCB=80V, 50 A ICEO VCE=70V 1.0 mA IEBO VEB=5.0V 0.5 m

3DD151 NPN A B C D E F G PCM TC=75 5 W ICM 1 A Tjm 175 Tstg -55~150 VCE=10V Rth 20 /W IC=0.1A V(BR)CBO ICB=1mA 80 150 200 250 350 400 600 V V(BR)CEO ICE=1mA 50 100 150 200 250 300 400 V V(BR)EBO IEB=0.1mA 5.0 V ICBO VCB

SMD rDIP Ty Trans storSMD Type TransistorSMD Type TransistoCSMDTyppee Tra n s iis tIorsTypeProduct specification3DD13007 FeaturesTO-263Unit: mm High Speed Switching+0.24.57-0.2+0.11.27-0.1 Suitable for Switching Regulator and Motor Control+0.10.1max1.27-0.11 32+0.10.81-0.12.541. BASE+0.22.54-0.2 +0.1 +0.25.08-0.1 0.4-0.22. COLLE

SMD Type TransistorsNPN Transistors3DD130021.70 0.1 Features Collector Current Capability IC=1A Collector Emitter Voltage VCEO=400V Power Switching Applications0.42 0.10.46 0.11.Base2.Collector3.Emitter Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collector - Base Voltage VCBO 600 Collector - Emitter Voltage VCEO 400 V Emitt

SMD Type TransistorsNPN Transistors3DD130031.70 0.1 Features Collector Current Capability IC=1.5A Collector Emitter Voltage VCEO=400V0.42 0.10.46 0.1 Power Switching Applications1.Base2.Collector3.Emitter Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collector - Base Voltage VCBO 700 Collector - Emitter Voltage VCEO 400 V Emi

SMD Type TransistorsNPN Transistors3DD13001 Features1.70 0.1 Collector-emitter Voltage: V(BR)CEO=400V Collector Current: IC=0.2A0.42 0.10.46 0.11.Base2.Collector3.Emitter Absolute Maximum Ratings Ta = 25Parameter Symbol Rating UnitCollector-Base Voltage VCBO 600 VCollector-Emitter Voltage VCEO 400 VEmitter-Base Voltage VEBO 7 VCollector Current -

Shaanxi Qunli Electric Co., Ltd Add.:No. 1 Qunli Road,Baoji City,Shaanxi,China 3DD11NPN Silicon Low Frequency High Power Transistor Features: 1. Using triple-diffusion process.Excellent capacity in anti-burnout.Excellent second breakdown capacity. 2. Good temperature stability.Excellent thermal fatigue capability. 3. Implementation of standards: QZJ840611 4. Use for Low-speed swit

Shaanxi Qunli Electric Co., Ltd Add.:No. 1 Qunli Road,Baoji City,Shaanxi,China 3DD10, 3DD11 NPN Silicon Low Frequency High Power Transistor Features: 1. Using triple-diffusion process.Excellent capacity in anti-burnout.Excellent second breakdown capacity. 2. Good temperature stability.Excellent thermal fatigue capability. 2. Implementation of standards: GJB33 A-97, QZJ840611A, QZJ84

Shaanxi Qunli Electric Co., Ltd Add.:No. 1 Qunli Road,Baoji City,Shaanxi,China 3DD104NPN Silicon Low Frequency High Power Transistor Features: 1. Using triple-diffusion process.Excellent capacity in anti-burnout.Excellent second breakdown capacity. 2. Good temperature stability.Excellent thermal fatigue capability. 3. Implementation of standards: GJB33 A-97 4. Use for Low-speed sw

Shaanxi Qunli Electric Co., Ltd Add.:No. 1 Qunli Road,Baoji City,Shaanxi,China 3DD171(172), 3DD175(176) NPN Silicon Low Frequency High Power Transistor Features: 1. Using triple-diffusion process.Excellent capacity in anti-burnout.Excellent second breakdown capacity. 2. Good temperature stability.Excellent thermal fatigue capability. 3. Implementation of standards: GJB33 A-97 4. U

Shaanxi Qunli Electric Co., Ltd Add.:No. 1 Qunli Road,Baoji City,Shaanxi,China 3DD162(3DD163)NPN Silicon Low Frequency High Power Transistor Features: 1. Using triple-diffusion process.Excellent capacity in anti-burnout.Excellent second breakdown capacity. 2. Good temperature stability.Excellent thermal fatigue capability. 3. Implementation of standards: GJB33 A-97, QZJ840611A, QZJ8

Shaanxi Qunli Electric Co., Ltd Add.:No. 1 Qunli Road,Baoji City,Shaanxi,China 3DD12NPN Silicon Low Frequency High Power Transistor Features: 1. Using triple-diffusion process.Excellent capacity in anti-burnout.Excellent second breakdown capacity. 2. Good temperature stability.Excellent thermal fatigue capability. 3. Implementation of standards: QZJ840611 4. Use for Low-speed swit

NPN R 3DD13003 M8D 3DD13003 M8D NPN VCEO 400 V IC 2 A Ptot TC=25 60 W

NPN R 3DD13009 A8 3DD13009 A8 NPN VCEO 400 V IC 12 A Ptot TC=25 100 W

NPN R 3DD13003 H6D 3DD13003 H6D VCEO 400 V NPN IC 1.8 A Ptot Tc=25 50 W

NPN R 3DD13003 F6 3DD13003 F6 NPN VCEO 400 V IC 1.5 A Ptot Tc=25 50 W

NPN R 3DD13005 C7D 3DD13005 C7D NPN VCEO 400 V IC 4 A Ptot TC=25 50 W

NPN R 3DD13007 X1 3DD13007 NPN VCEO 400 V IC 8 A Ptot TC=25

NPN R 3DD13003 F1D 3DD13003 F1D VCEO 400 V NPN IC 1.5 A Ptot Ta=25 0.8 W

NPN R 3DD13009 AN 3DD13009 AN NPN VCEO 400 V IC 12 A Ptot TC=25 120 W

NPN R 3DD13002 B1 3DD13002 B1 NPN VCEO 400 V IC 0.5 A Ptot Ta=25 0.8 W

NPN R 3DD13003 E1D 3DD13003 E1D VCEO 400 V NPN IC 1.3 A Ptot Ta=25 0.8 W

NPN R 3DD13003 E6D 3DD13003 E6D VCEO 400 V NPN IC 1.3 A Ptot Tc=25 40 W

NPN R 3DD13005 GRD 3DD13005 GRD NPN VCEO 400 V IC 4 A Ptot TC=25 75 W

3DD13009ANNPN Main Characteristics VCEO 400 V IC 12 A Ptot TC=25 120 W Applications Energy-saving light Electronic lamp ballasts Electronic transformer High frequency switching power supplyTO-3P Commonly power am

INCHANGE Semiconductor isc Product Specificationisc Silicon NPN Power Transistor 3DD104EDESCRIPTIONWith TO-3 packagingLarge collector currentLow collector saturation voltageHigh power dissipationMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use in DC-DC converterDriver of solenoid or motorABSOLUTE

isc Silicon NPN Power Transistor 3DD13009KDESCRIPTIONHigh breakdown voltageHigh switching speedHigh current capabilityMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSEnergy-saving lighElectronic ballastsHigh frequency switching power supplyHigh frequency power transformABSOLUTE MAXIMUM RATINGS(T =25)aSYM

INCHANGE Semiconductor isc Product Specificationisc Silicon NPN Power Transistor 3DD104CDESCRIPTIONWith TO-3 packagingLarge collector currentLow collector saturation voltageHigh power dissipationMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use in DC-DC converterDriver of solenoid or motorABSOLUTE

INCHANGE Semiconductor isc Product Specificationisc Silicon NPN Power Transistor 3DD101BDESCRIPTIONWith TO-3 packagingLarge collector currentLow collector saturation voltageHigh power dissipationMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use in DC-DC converterDriver of solenoid or motorABSOLUTE

INCHANGE Semiconductorisc Silicon NPN Power Transistor 3DD167EDESCRIPTIONWith TO-3 packagingLarge collector currentLow collector saturation voltageHigh power dissipationMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use in DC-DC converterDriver of solenoid or motorABSOLUTE MAXIMUM RATINGS(T =25)

INCHANGE Semiconductor isc Product Specificationisc Silicon NPN Power Transistor 3DD104DDESCRIPTIONWith TO-3 packagingLarge collector currentLow collector saturation voltageHigh power dissipationMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use in DC-DC converterDriver of solenoid or motorABSOLUTE

INCHANGE Semiconductorisc Silicon NPN Power Transistor 3DD159FDESCRIPTIONWith TO-3 packagingLarge collector currentLow collector saturation voltageHigh power dissipationMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use in DC-DC converterDriver of solenoid or motorABSOLUTE MAXIMUM RATINGS(T =25)

INCHANGE Semiconductorisc Silicon NPN Power Transistor 3DD159CDESCRIPTIONWith TO-3 packagingLarge collector currentLow collector saturation voltageHigh power dissipationMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use in DC-DC converterDriver of solenoid or motorABSOLUTE MAXIMUM RATINGS(T =25)

INCHANGE Semiconductor isc Product Specificationisc Silicon NPN Power Transistor 3DD100EDESCRIPTIONWith TO-66 packagingLarge collector currentLow collector saturation voltageHigh power dissipationMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use in DC-DC converterDriver of solenoid or motorABSOLUTE

isc Silicon NPN Power Transistor 3DD15DDESCRIPTIONCollector-Emitter Breakdown Voltage-: V = 200V(Min.)(BR)CEODC Current Gain-: h = 30~250(Min.)@I = 2AFE CCollector-Emitter Saturation Voltage-: V )= 1.5V(Max)@ I = 2.5ACE(sat CMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for B&W TV horizontal output , r

INCHANGE Semiconductor isc Product Specificationisc Silicon NPN Power Transistor 3DD101EDESCRIPTIONWith TO-3 packagingLarge collector currentLow collector saturation voltageHigh power dissipationMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use in DC-DC converterDriver of solenoid or motorABSOLUTE

INCHANGE Semiconductorisc Silicon NPN Power Transistor 3DD167DDESCRIPTIONWith TO-3 packagingLarge collector currentLow collector saturation voltageHigh power dissipationMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use in DC-DC converterDriver of solenoid or motorABSOLUTE MAXIMUM RATINGS(T =25)

isc Silicon NPN Power Transistor 3DD102ADESCRIPTIONCollector-Emitter Breakdown Voltage-: V = 100V(Min.)(BR)CEODC Current Gain-: h = 20(Min.)@I = 2AFE CCollector-Emitter Saturation Voltage-: V )= 0.8V(Max)@ I = 2.5ACE(sat CMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for power amplifier , DC Transform

E Semiconductor isc Product Specificationisc Silicon NPN Power Transistor 3DD100CDESCRIPTIONWith TO-66 packagingLarge collector currentLow collector saturation voltageHigh power dissipationMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use in DC-DC converterDriver of solenoid or motorABSOLUTE MAXIMU

INCHANGE Semiconductorisc Silicon NPN Power Transistor 3DD100BDESCRIPTIONWith TO-66 packagingLarge collector currentLow collector saturation voltageHigh power dissipationMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use in DC-DC converterDriver of solenoid or motorABSOLUTE MAXIMUM RATINGS(T =25)

isc Silicon NPN Power Transistor 3DD15DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = 60V(Min.)(BR)CEODC Current Gain-: h = 30~250(Min.)@I = 2AFE CCollector-Emitter Saturation Voltage-: V )= 1.5V(Max)@ I = 2.5ACE(sat CMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for B&W TV horizontal output , reg

isc Silicon NPN Power Transistor 3DD101ADESCRIPTIONCollector-Emitter Breakdown Voltage-: V = 100V(Min.)(BR)CEODC Current Gain-: h = 20(Min.)@I = 2AFE CCollector-Emitter Saturation Voltage-: V )= 0.8V(Max)@ I = 2.5ACE(sat CMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for power amplifier,DC-DC converter

INCHANGE Semiconductor isc Product Specificationisc Silicon NPN Power Transistor 3DD159ADESCRIPTIONWith TO-3 packagingLarge collector currentLow collector saturation voltageHigh power dissipationMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use in DC-DC converterDriver of solenoid or motorABSOLUTE

isc Silicon NPN Power Transistor 3DD13009NDESCRIPTIONHigh breakdown voltageHigh switching speedHigh current capabilityMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSEnergy-saving lighHigh frequency switching power supplyHigh frequency power transformABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNI

INCHANGE Semiconductorisc Silicon NPN Power Transistor 3DD159DDESCRIPTIONWith TO-3 packagingLarge collector currentLow collector saturation voltageHigh power dissipationMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use in DC-DC converterDriver of solenoid or motorABSOLUTE MAXIMUM RATINGS(T =25)

INCHANGE Semiconductorisc Silicon NPN Power Transistor 3DD167FDESCRIPTIONWith TO-3 packagingLarge collector currentLow collector saturation voltageHigh power dissipationMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use in DC-DC converterDriver of solenoid or motorABSOLUTE MAXIMUM RATINGS(T =25)

INCHANGE Semiconductorisc Silicon NPN Power Transistor 3DD159EDESCRIPTIONWith TO-3 packagingLarge collector currentLow collector saturation voltageHigh power dissipationMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use in DC-DC converterDriver of solenoid or motorABSOLUTE MAXIMUM RATINGS(T =25)

isc Silicon NPN Power Transistor 3DD164FDESCRIPTIONWith TO-3 packagingLarge collector currentLow collector saturation voltageHigh power dissipationMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use in DC-DC converterDriver of solenoid or motorABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VAL

INCHANGE Semiconductor isc Product Specificationisc Silicon NPN Power Transistor 3DD102DDESCRIPTIONWith TO-3 packagingLarge collector currentLow collector saturation voltageHigh power dissipationMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use in DC-DC converterDriver of solenoid or motorFor aud

INCHANGE Semiconductorisc Silicon NPN Power Transistor 3DD167CDESCRIPTIONWith TO-3 packagingLarge collector currentLow collector saturation voltageHigh power dissipationMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use in DC-DC converterDriver of solenoid or motorABSOLUTE MAXIMUM RATINGS(T =25)

INCHANGE Semiconductor isc Product Specificationisc Silicon NPN Power Transistor 3DD104ADESCRIPTIONWith TO-3 packagingLarge collector currentLow collector saturation voltageHigh power dissipationMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use in DC-DC converterDriver of solenoid or motorABSOLUTE

isc Silicon NPN Power Transistor 3DD155DESCRIPTIONDC Current Gain: h = 15-120@I = 1AFE CCollector-Emitter Saturation Voltage: V )= 1.0V(Max)@ I = 1ACE(sat CMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for B&W TV horizontal output , regulated powersupply and power amplifier applications.ABSOLUTE MAXIMUM RA

INCHANGE Semiconductor isc Product Specificationisc Silicon NPN Power Transistor 3DD100DDESCRIPTIONWith TO-66 packagingLarge collector currentLow collector saturation voltageHigh power dissipationMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use in DC-DC converterDriver of solenoid or motorABSOLUTE

isc Silicon NPN Power Transistor 3DD13009NLDESCRIPTIONHigh breakdown voltageHigh switching speedHigh current capabilityMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSEnergy-saving lighHigh frequency switching power supplyHigh frequency power transformABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UN

isc Silicon NPN Power Transistor 3DD103EDESCRIPTIONCollector-Emitter Breakdown Voltage-: V = 800V(Min.)(BR)CEODC Current Gain-: h = 10(Min.)@I = 1.5AFE CCollector-Emitter Saturation Voltage-: V )= 4V(Max)@ I = 3ACE(sat CMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for power amplifier , DC-DC converts

INCHANGE Semiconductorisc Silicon NPN Power Transistor 3DD167ADESCRIPTIONWith TO-3 packagingLarge collector currentLow collector saturation voltageHigh power dissipationMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use in DC-DC converterDriver of solenoid or motorABSOLUTE MAXIMUM RATINGS(T =25)

INCHANGE Semiconductorisc Silicon NPN Power Transistor 3DD13009DESCRIPTIONCollectorEmitter Sustaining Voltage: V = 400V(Min.)CEO(SUS)Collector Saturation Voltage: V = 1.5 (Max) @ I = 8.0ACE(sat) CSwitching Time: t = 0.7s(Max.)@ I = 8.0Af C100% testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesig

INCHANGE Semiconductorisc Silicon NPN Power Transistor 3DD159BDESCRIPTIONWith TO-3 packagingLarge collector currentLow collector saturation voltageHigh power dissipationMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use in DC-DC converterDriver of solenoid or motorABSOLUTE MAXIMUM RATINGS(T =25)

INCHANGE Semiconductorisc Silicon NPN Power Transistor 3DD167BDESCRIPTIONWith TO-3 packagingLarge collector currentLow collector saturation voltageHigh power dissipationMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use in DC-DC converterDriver of solenoid or motorABSOLUTE MAXIMUM RATINGS(T =25)

isc Silicon NPN Power Transistor 3DD15BDESCRIPTIONCollector-Emitter Breakdown Voltage-: V = 100V(Min.)(BR)CEODC Current Gain-: h = 30~250(Min.)@I = 2AFE CCollector-Emitter Saturation Voltage-: V )= 1.5V(Max)@ I = 2.5ACE(sat CMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for B&W TV horizontal output , r

INCHANGE Semiconductor isc Product Specificationisc Silicon NPN Power Transistor 3DD101DDESCRIPTIONWith TO-3 packagingLarge collector currentLow collector saturation voltageHigh power dissipationMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use in DC-DC converterDriver of solenoid or motorABSOLUTE

isc Silicon NPN Power Transistor 3DD102CDESCRIPTIONCollector-Emitter Breakdown Voltage-: V = 150V(Min.)(BR)CEODC Current Gain-: h = 20(Min.)@I = 2AFE CCollector-Emitter Saturation Voltage-: V )= 1.5V(Max)@ I = 2.5ACE(sat CMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for power amplifier , DC Transform

isc Silicon NPN Power Transistor 3DD100ADESCRIPTIONWith TO-66 packagingLarge collector currentLow collector saturation voltageHigh power dissipationMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use in DC-DC converterDriver of solenoid or motorABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VA

INCHANGE Semiconductor isc Product Specificationisc Silicon NPN Power Transistor 3DD101CDESCRIPTIONWith TO-3 packagingLarge collector currentLow collector saturation voltageHigh power dissipationMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use in DC-DC converterDriver of solenoid or motorABSOLUTE

INCHANGE Semiconductor isc Product Specificationisc Silicon NPN Power Transistor 3DD104BDESCRIPTIONWith TO-3 packagingLarge collector currentLow collector saturation voltageHigh power dissipationMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use in DC-DC converterDriver of solenoid or motorABSOLUTE