3DD10 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: 3DD10
Material: Si
Polaridad de transistor: NPN
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 200 W
Tensión colector-emisor (Vce): 50 V
Tensión emisor-base (Veb): 5 V
Corriente del colector DC máxima (Ic): 20 A
Temperatura operativa máxima (Tj): 175 °C
CARACTERÍSTICAS ELÉCTRICAS
Ganancia de corriente contínua (hfe): 15
Empaquetado / Estuche: TO3
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3DD10 Datasheet (PDF)
1.1. 3dd103.pdf 
Size:150K _china
3DD103 型 NPN 硅低频大功率晶体管 规范值 参数符号 测试条件 单位 A B C D E PCM TC=75℃ 50 W ICM 3 A 极 Tjm 175 ℃ 限 Tstg -55~150 ℃ 值 VCE=10V Rth 2 ℃/W IC=1.5A V(BR)CBO ICB=5mA ≥300 ≥600 ≥800 ≥1200 ≥1500 V V(BR)CEO ICE=5mA ≥200 ≥300 ≥400 ≥600 ≥800 V V(BR)EBO IEB=10mA ≥4.0 V ICBO VCB=50V ≤0.1 mA 直 流 ICE
1.2. 3dd104.pdf Size:24K _china
Shaanxi Qunli Electric Co., Ltd Add.:No. 1 Qunli Road,Baoji City,Shaanxi,China 3DD104 NPN Silicon Low Frequency High Power Transistor Features: 1. Using triple-diffusion process.Excellent capacity in anti-burnout.Excellent second breakdown capacity. 2. Good temperature stability.Excellent thermal fatigue capability. 3. Implementation of standards: GJB33 A-97 4. Use for Low-speed sw
1.3. 3dd101.pdf Size:150K _china
3DD101/3DD102 型 NPN 硅低频大功率晶体管 规范值 参数符号 测试条件 单位 A B C D E F PCM TC=75℃ 50 W ICM 5 A 极 Tjm 175 ℃ 限 Tstg -55~150 ℃ 值 VCE=10V Rth 2 ℃/W IC=1.5A V(BR)CBO ICB=3mA ≥100 ≥150 ≥200 ≥250 ≥300 ≥350 V V(BR)CEO ICE=3mA ≥50 ≥100 ≥150 ≥200 ≥250 ≥300 V V(BR)EBO IEB=1mA ≥4.0 V ICBO VCB=50V ≤0.
1.4. 3dd102.pdf Size:150K _china
3DD101/3DD102 型 NPN 硅低频大功率晶体管 规范值 参数符号 测试条件 单位 A B C D E F PCM TC=75℃ 50 W ICM 5 A 极 Tjm 175 ℃ 限 Tstg -55~150 ℃ 值 VCE=10V Rth 2 ℃/W IC=1.5A V(BR)CBO ICB=3mA ≥100 ≥150 ≥200 ≥250 ≥300 ≥350 V V(BR)CEO ICE=3mA ≥50 ≥100 ≥150 ≥200 ≥250 ≥300 V V(BR)EBO IEB=1mA ≥4.0 V ICBO VCB=50V ≤0.
1.5. 3dd100.pdf Size:149K _china
3DD99(3DD100)型 NPN 硅低频大功率晶体管 规范值 参数符号 测试条件 单位 A B C D E PCM Tc=75℃ 20 W ICM 1.5 A 极 Tjm 175 ℃ 限 Tstg -55~150 ℃ 值 VCE=10V Rth 5 ℃/W IC=0.5A V(BR)CBO ICE=1mA ≥150 ≥200 ≥250 ≥300 ≥350 V V(BR)CEO ICE=1mA ≥100 ≥150 ≥200 ≥250 ≥300 V V(BR)EBO IEB=1mA ≥5.0 V ICBO VCB=50V ≤0.5 mA 直
1.6. 3dd10.pdf Size:33K _china
Shaanxi Qunli Electric Co., Ltd Add.:No. 1 Qunli Road,Baoji City,Shaanxi,China 3DD10, 3DD11 NPN Silicon Low Frequency High Power Transistor Features: 1. Using triple-diffusion process.Excellent capacity in anti-burnout.Excellent second breakdown capacity. 2. Good temperature stability.Excellent thermal fatigue capability. 2. Implementation of standards: GJB33 A-97, QZJ840611A, QZJ84
Otros transistores... 2SC4323 , 2SC4324 , 2SC4325 , 2SC4326 , 2SC4327 , 2SC4328 , 2SC4329 , 2SC433 , BC237 , 2SC4331 , 2SC4332 , 2SC4333 , 2SC4334 , 2SC4335 , 2SC4336 , 2SC4337 , 2SC4338 .
