3DD10 Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: 3DD10
Material: Si
Polaridad de transistor: NPN
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 200 W
Tensión colector-emisor (Vce): 50 V
Tensión emisor-base (Veb): 5 V
Corriente del colector DC máxima (Ic): 20 A
Temperatura operativa máxima (Tj): 175 °C
CARACTERÍSTICAS ELÉCTRICAS
Ganancia de corriente contínua (hFE): 15
Encapsulados: TO3
Búsqueda de reemplazo de 3DD10
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3DD10 datasheet
..1. Size:33K shaanxi
3dd10.pdf 
Shaanxi Qunli Electric Co., Ltd Add. No. 1 Qunli Road,Baoji City,Shaanxi,China 3DD10, 3DD11 NPN Silicon Low Frequency High Power Transistor Features 1. Using triple-diffusion process.Excellent capacity in anti-burnout.Excellent second breakdown capacity. 2. Good temperature stability.Excellent thermal fatigue capability. 2. Implementation of standards GJB33 A-97, QZJ840611A, QZJ84
0.1. Size:150K china
3dd103.pdf
3DD103 NPN A B C D E PCM TC=75 50 W ICM 3 A Tjm 175 Tstg -55 150 VCE=10V Rth 2 /W IC=1.5A V(BR)CBO ICB=5mA 300 600 800 1200 1500 V V(BR)CEO ICE=5mA 200 300 400 600 800 V V(BR)EBO IEB=10mA 4.0 V ICBO VCB=50V 0.1 mA ICE
0.3. Size:150K china
3dd101.pdf
3DD101/3DD102 NPN A B C D E F PCM TC=75 50 W ICM 5 A Tjm 175 Tstg -55 150 VCE=10V Rth 2 /W IC=1.5A V(BR)CBO ICB=3mA 100 150 200 250 300 350 V V(BR)CEO ICE=3mA 50 100 150 200 250 300 V V(BR)EBO IEB=1mA 4.0 V ICBO VCB=50V 0.
0.4. Size:150K china
3dd102.pdf
3DD101/3DD102 NPN A B C D E F PCM TC=75 50 W ICM 5 A Tjm 175 Tstg -55 150 VCE=10V Rth 2 /W IC=1.5A V(BR)CBO ICB=3mA 100 150 200 250 300 350 V V(BR)CEO ICE=3mA 50 100 150 200 250 300 V V(BR)EBO IEB=1mA 4.0 V ICBO VCB=50V 0.
0.5. Size:24K shaanxi
3dd104.pdf
Shaanxi Qunli Electric Co., Ltd Add. No. 1 Qunli Road,Baoji City,Shaanxi,China 3DD104 NPN Silicon Low Frequency High Power Transistor Features 1. Using triple-diffusion process.Excellent capacity in anti-burnout.Excellent second breakdown capacity. 2. Good temperature stability.Excellent thermal fatigue capability. 3. Implementation of standards GJB33 A-97 4. Use for Low-speed sw
0.6. Size:183K inchange semiconductor
3dd104e.pdf
INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor 3DD104E DESCRIPTION With TO-3 packaging Large collector current Low collector saturation voltage High power dissipation Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use in DC-DC converter Driver of solenoid or motor ABSOLUTE
0.7. Size:182K inchange semiconductor
3dd104c.pdf
INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor 3DD104C DESCRIPTION With TO-3 packaging Large collector current Low collector saturation voltage High power dissipation Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use in DC-DC converter Driver of solenoid or motor ABSOLUTE
0.8. Size:183K inchange semiconductor
3dd101b.pdf
INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor 3DD101B DESCRIPTION With TO-3 packaging Large collector current Low collector saturation voltage High power dissipation Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use in DC-DC converter Driver of solenoid or motor ABSOLUTE
0.9. Size:183K inchange semiconductor
3dd104d.pdf
INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor 3DD104D DESCRIPTION With TO-3 packaging Large collector current Low collector saturation voltage High power dissipation Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use in DC-DC converter Driver of solenoid or motor ABSOLUTE
0.10. Size:206K inchange semiconductor
3dd100e.pdf
INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor 3DD100E DESCRIPTION With TO-66 packaging Large collector current Low collector saturation voltage High power dissipation Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use in DC-DC converter Driver of solenoid or motor ABSOLUTE
0.11. Size:182K inchange semiconductor
3dd101e.pdf
INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor 3DD101E DESCRIPTION With TO-3 packaging Large collector current Low collector saturation voltage High power dissipation Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use in DC-DC converter Driver of solenoid or motor ABSOLUTE
0.12. Size:209K inchange semiconductor
3dd102a.pdf
isc Silicon NPN Power Transistor 3DD102A DESCRIPTION Collector-Emitter Breakdown Voltage- V = 100V(Min.) (BR)CEO DC Current Gain- h = 20(Min.)@I = 2A FE C Collector-Emitter Saturation Voltage- V )= 0.8V(Max)@ I = 2.5A CE(sat C Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for power amplifier , DC Transform
0.13. Size:184K inchange semiconductor
3dd100c.pdf
E Semiconductor isc Product Specification isc Silicon NPN Power Transistor 3DD100C DESCRIPTION With TO-66 packaging Large collector current Low collector saturation voltage High power dissipation Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use in DC-DC converter Driver of solenoid or motor ABSOLUTE MAXIMU
0.14. Size:184K inchange semiconductor
3dd100b.pdf
INCHANGE Semiconductor isc Silicon NPN Power Transistor 3DD100B DESCRIPTION With TO-66 packaging Large collector current Low collector saturation voltage High power dissipation Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use in DC-DC converter Driver of solenoid or motor ABSOLUTE MAXIMUM RATINGS(T =25 )
0.15. Size:191K inchange semiconductor
3dd101a.pdf
isc Silicon NPN Power Transistor 3DD101A DESCRIPTION Collector-Emitter Breakdown Voltage- V = 100V(Min.) (BR)CEO DC Current Gain- h = 20(Min.)@I = 2A FE C Collector-Emitter Saturation Voltage- V )= 0.8V(Max)@ I = 2.5A CE(sat C Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for power amplifier,DC-DC converter
0.16. Size:182K inchange semiconductor
3dd102d.pdf
INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor 3DD102D DESCRIPTION With TO-3 packaging Large collector current Low collector saturation voltage High power dissipation Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use in DC-DC converter Driver of solenoid or motor For aud
0.17. Size:182K inchange semiconductor
3dd104a.pdf
INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor 3DD104A DESCRIPTION With TO-3 packaging Large collector current Low collector saturation voltage High power dissipation Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use in DC-DC converter Driver of solenoid or motor ABSOLUTE
0.18. Size:185K inchange semiconductor
3dd100d.pdf
INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor 3DD100D DESCRIPTION With TO-66 packaging Large collector current Low collector saturation voltage High power dissipation Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use in DC-DC converter Driver of solenoid or motor ABSOLUTE
0.19. Size:202K inchange semiconductor
3dd103e.pdf
isc Silicon NPN Power Transistor 3DD103E DESCRIPTION Collector-Emitter Breakdown Voltage- V = 800V(Min.) (BR)CEO DC Current Gain- h = 10(Min.)@I = 1.5A FE C Collector-Emitter Saturation Voltage- V )= 4V(Max)@ I = 3A CE(sat C Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for power amplifier , DC-DC converts
0.20. Size:182K inchange semiconductor
3dd101d.pdf
INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor 3DD101D DESCRIPTION With TO-3 packaging Large collector current Low collector saturation voltage High power dissipation Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use in DC-DC converter Driver of solenoid or motor ABSOLUTE
0.21. Size:210K inchange semiconductor
3dd102c.pdf
isc Silicon NPN Power Transistor 3DD102C DESCRIPTION Collector-Emitter Breakdown Voltage- V = 150V(Min.) (BR)CEO DC Current Gain- h = 20(Min.)@I = 2A FE C Collector-Emitter Saturation Voltage- V )= 1.5V(Max)@ I = 2.5A CE(sat C Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for power amplifier , DC Transform
0.22. Size:186K inchange semiconductor
3dd100a.pdf
isc Silicon NPN Power Transistor 3DD100A DESCRIPTION With TO-66 packaging Large collector current Low collector saturation voltage High power dissipation Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use in DC-DC converter Driver of solenoid or motor ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VA
0.23. Size:182K inchange semiconductor
3dd101c.pdf
INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor 3DD101C DESCRIPTION With TO-3 packaging Large collector current Low collector saturation voltage High power dissipation Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use in DC-DC converter Driver of solenoid or motor ABSOLUTE
0.24. Size:204K inchange semiconductor
3dd104b.pdf
INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor 3DD104B DESCRIPTION With TO-3 packaging Large collector current Low collector saturation voltage High power dissipation Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use in DC-DC converter Driver of solenoid or motor ABSOLUTE
Otros transistores... 3CK4, 3CK5323, 3CK9, 3DD03T, 3DD04T, 3DD05, 3DD05T, 3DD1, 2SC4793, 3DD100, 3DD101, 3DD102, 3DD103, 3DD104, 3DD11, 3DD12, 3DD122
