3DD10 Datasheet, Equivalent, Cross Reference Search
Type Designator: 3DD10
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 200 W
Maximum Collector-Emitter Voltage |Vce|: 50 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 20 A
Max. Operating Junction Temperature (Tj): 175 °C
Forward Current Transfer Ratio (hFE), MIN: 15
Noise Figure, dB: -
Package: TO3
3DD10 Transistor Equivalent Substitute - Cross-Reference Search
3DD10 Datasheet (PDF)
1.1. 3dd103.pdf 
Size:150K _china
3DD103 型 NPN 硅低频大功率晶体管 规范值 参数符号 测试条件 单位 A B C D E PCM TC=75℃ 50 W ICM 3 A 极 Tjm 175 ℃ 限 Tstg -55~150 ℃ 值 VCE=10V Rth 2 ℃/W IC=1.5A V(BR)CBO ICB=5mA ≥300 ≥600 ≥800 ≥1200 ≥1500 V V(BR)CEO ICE=5mA ≥200 ≥300 ≥400 ≥600 ≥800 V V(BR)EBO IEB=10mA ≥4.0 V ICBO VCB=50V ≤0.1 mA 直 流 ICE
1.2. 3dd104.pdf Size:24K _china
Shaanxi Qunli Electric Co., Ltd Add.:No. 1 Qunli Road,Baoji City,Shaanxi,China 3DD104 NPN Silicon Low Frequency High Power Transistor Features: 1. Using triple-diffusion process.Excellent capacity in anti-burnout.Excellent second breakdown capacity. 2. Good temperature stability.Excellent thermal fatigue capability. 3. Implementation of standards: GJB33 A-97 4. Use for Low-speed sw
1.3. 3dd101.pdf Size:150K _china
3DD101/3DD102 型 NPN 硅低频大功率晶体管 规范值 参数符号 测试条件 单位 A B C D E F PCM TC=75℃ 50 W ICM 5 A 极 Tjm 175 ℃ 限 Tstg -55~150 ℃ 值 VCE=10V Rth 2 ℃/W IC=1.5A V(BR)CBO ICB=3mA ≥100 ≥150 ≥200 ≥250 ≥300 ≥350 V V(BR)CEO ICE=3mA ≥50 ≥100 ≥150 ≥200 ≥250 ≥300 V V(BR)EBO IEB=1mA ≥4.0 V ICBO VCB=50V ≤0.
1.4. 3dd102.pdf Size:150K _china
3DD101/3DD102 型 NPN 硅低频大功率晶体管 规范值 参数符号 测试条件 单位 A B C D E F PCM TC=75℃ 50 W ICM 5 A 极 Tjm 175 ℃ 限 Tstg -55~150 ℃ 值 VCE=10V Rth 2 ℃/W IC=1.5A V(BR)CBO ICB=3mA ≥100 ≥150 ≥200 ≥250 ≥300 ≥350 V V(BR)CEO ICE=3mA ≥50 ≥100 ≥150 ≥200 ≥250 ≥300 V V(BR)EBO IEB=1mA ≥4.0 V ICBO VCB=50V ≤0.
1.5. 3dd100.pdf Size:149K _china
3DD99(3DD100)型 NPN 硅低频大功率晶体管 规范值 参数符号 测试条件 单位 A B C D E PCM Tc=75℃ 20 W ICM 1.5 A 极 Tjm 175 ℃ 限 Tstg -55~150 ℃ 值 VCE=10V Rth 5 ℃/W IC=0.5A V(BR)CBO ICE=1mA ≥150 ≥200 ≥250 ≥300 ≥350 V V(BR)CEO ICE=1mA ≥100 ≥150 ≥200 ≥250 ≥300 V V(BR)EBO IEB=1mA ≥5.0 V ICBO VCB=50V ≤0.5 mA 直
1.6. 3dd10.pdf Size:33K _china
Shaanxi Qunli Electric Co., Ltd Add.:No. 1 Qunli Road,Baoji City,Shaanxi,China 3DD10, 3DD11 NPN Silicon Low Frequency High Power Transistor Features: 1. Using triple-diffusion process.Excellent capacity in anti-burnout.Excellent second breakdown capacity. 2. Good temperature stability.Excellent thermal fatigue capability. 2. Implementation of standards: GJB33 A-97, QZJ840611A, QZJ84
Datasheet: 2N3181 , 2N3182 , 2N3183 , 2N3184 , 2N3185 , 2N3186 , 2N3187 , 2N3188 , BC547B , 2N319 , 2N3190 , 2N3191 , 2N3192 , 2N3193 , 2N3194 , 2N3195 , 2N3196 .
