All Transistors. 3DD10 Datasheet

 

3DD10 Datasheet, Equivalent, Cross Reference Search

Type Designator: 3DD10

Material of Transistor: Si

Polarity: NPN

Maximum Collector Power Dissipation (Pc): 200 W

Maximum Collector-Emitter Voltage |Vce|: 50 V

Maximum Emitter-Base Voltage |Veb|: 5 V

Maximum Collector Current |Ic max|: 20 A

Max. Operating Junction Temperature (Tj): 175 °C

Forward Current Transfer Ratio (hFE), MIN: 15

Noise Figure, dB: -

Package: TO3

3DD10 Transistor Equivalent Substitute - Cross-Reference Search

3DD10 Datasheet (PDF)

1.1. 3dd103.pdf Size:150K _china

3DD10

3DD103 型 NPN 硅低频大功率晶体管 规范值 参数符号 测试条件 单位 A B C D E PCM TC=75℃ 50 W ICM 3 A 极 Tjm 175 ℃ 限 Tstg -55~150 ℃ 值 VCE=10V Rth 2 ℃/W IC=1.5A V(BR)CBO ICB=5mA ≥300 ≥600 ≥800 ≥1200 ≥1500 V V(BR)CEO ICE=5mA ≥200 ≥300 ≥400 ≥600 ≥800 V V(BR)EBO IEB=10mA ≥4.0 V ICBO VCB=50V ≤0.1 mA 直 流 ICE

1.2. 3dd104.pdf Size:24K _china

3DD10

Shaanxi Qunli Electric Co., Ltd Add.:No. 1 Qunli Road,Baoji City,Shaanxi,China 3DD104 NPN Silicon Low Frequency High Power Transistor Features: 1. Using triple-diffusion process.Excellent capacity in anti-burnout.Excellent second breakdown capacity. 2. Good temperature stability.Excellent thermal fatigue capability. 3. Implementation of standards: GJB33 A-97 4. Use for Low-speed sw

1.3. 3dd101.pdf Size:150K _china

3DD10

3DD101/3DD102 型 NPN 硅低频大功率晶体管 规范值 参数符号 测试条件 单位 A B C D E F PCM TC=75℃ 50 W ICM 5 A 极 Tjm 175 ℃ 限 Tstg -55~150 ℃ 值 VCE=10V Rth 2 ℃/W IC=1.5A V(BR)CBO ICB=3mA ≥100 ≥150 ≥200 ≥250 ≥300 ≥350 V V(BR)CEO ICE=3mA ≥50 ≥100 ≥150 ≥200 ≥250 ≥300 V V(BR)EBO IEB=1mA ≥4.0 V ICBO VCB=50V ≤0.

1.4. 3dd102.pdf Size:150K _china

3DD10

3DD101/3DD102 型 NPN 硅低频大功率晶体管 规范值 参数符号 测试条件 单位 A B C D E F PCM TC=75℃ 50 W ICM 5 A 极 Tjm 175 ℃ 限 Tstg -55~150 ℃ 值 VCE=10V Rth 2 ℃/W IC=1.5A V(BR)CBO ICB=3mA ≥100 ≥150 ≥200 ≥250 ≥300 ≥350 V V(BR)CEO ICE=3mA ≥50 ≥100 ≥150 ≥200 ≥250 ≥300 V V(BR)EBO IEB=1mA ≥4.0 V ICBO VCB=50V ≤0.

1.5. 3dd100.pdf Size:149K _china

3DD10

3DD99(3DD100)型 NPN 硅低频大功率晶体管 规范值 参数符号 测试条件 单位 A B C D E PCM Tc=75℃ 20 W ICM 1.5 A 极 Tjm 175 ℃ 限 Tstg -55~150 ℃ 值 VCE=10V Rth 5 ℃/W IC=0.5A V(BR)CBO ICE=1mA ≥150 ≥200 ≥250 ≥300 ≥350 V V(BR)CEO ICE=1mA ≥100 ≥150 ≥200 ≥250 ≥300 V V(BR)EBO IEB=1mA ≥5.0 V ICBO VCB=50V ≤0.5 mA 直

1.6. 3dd10.pdf Size:33K _china

3DD10

Shaanxi Qunli Electric Co., Ltd Add.:No. 1 Qunli Road,Baoji City,Shaanxi,China 3DD10, 3DD11 NPN Silicon Low Frequency High Power Transistor Features: 1. Using triple-diffusion process.Excellent capacity in anti-burnout.Excellent second breakdown capacity. 2. Good temperature stability.Excellent thermal fatigue capability. 2. Implementation of standards: GJB33 A-97, QZJ840611A, QZJ84

Datasheet: 3CK4 , 3CK5323 , 3CK9 , 3DD03T , 3DD04T , 3DD05 , 3DD05T , 3DD1 , 2N4401 , 3DD100 , 3DD101 , 3DD102 , 3DD103 , 3DD104 , 3DD11 , 3DD12 , 3DD122 .

 


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