3DD10 Datasheet and Replacement

   Type Designator: 3DD10
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 200 W
   Maximum Collector-Emitter Voltage |Vce|: 50 V
   Maximum Emitter-Base Voltage |Veb|: 5 V
   Maximum Collector Current |Ic max|: 20 A
   Max. Operating Junction Temperature (Tj): 175 °C
   Forward Current Transfer Ratio (hFE), MIN: 15
   Noise Figure, dB: -
   Package: TO3

3DD10 Substitution

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3DD10 Datasheet (PDF)

..1. Size:33K shaanxi
3dd10.pdf pdf_icon

Shaanxi Qunli Electric Co., Ltd Add.:No. 1 Qunli Road,Baoji City,Shaanxi,China 3DD10, 3DD11 NPN Silicon Low Frequency High Power Transistor Features: 1. Using triple-diffusion process.Excellent capacity in anti-burnout.Excellent second breakdown capacity. 2. Good temperature stability.Excellent thermal fatigue capability. 2. Implementation of standards: GJB33 A-97, QZJ840611A, QZJ84

0.1. Size:150K china
3dd103.pdf pdf_icon

3DD103 NPN A B C D E PCM TC=75 50 W ICM 3 A Tjm 175 Tstg -55~150 VCE=10V Rth 2 /W IC=1.5A V(BR)CBO ICB=5mA 300 600 800 1200 1500 V V(BR)CEO ICE=5mA 200 300 400 600 800 V V(BR)EBO IEB=10mA 4.0 V ICBO VCB=50V 0.1 mA ICE

0.2. Size:149K china
3dd100.pdf pdf_icon

3DD99(3DD100) NPN A B C D E PCM Tc=75 20 W ICM 1.5 A Tjm 175 Tstg -55~150 VCE=10V Rth 5 /W IC=0.5A V(BR)CBO ICE=1mA 150 200 250 300 350 V V(BR)CEO ICE=1mA 100 150 200 250 300 V V(BR)EBO IEB=1mA 5.0 V ICBO VCB=50V 0.5 mA

0.3. Size:150K china
3dd101.pdf pdf_icon

3DD101/3DD102 NPN A B C D E F PCM TC=75 50 W ICM 5 A Tjm 175 Tstg -55~150 VCE=10V Rth 2 /W IC=1.5A V(BR)CBO ICB=3mA 100 150 200 250 300 350 V V(BR)CEO ICE=3mA 50 100 150 200 250 300 V V(BR)EBO IEB=1mA 4.0 V ICBO VCB=50V 0.

0.4. Size:150K china
3dd102.pdf pdf_icon

0.5. Size:24K shaanxi
3dd104.pdf pdf_icon

Shaanxi Qunli Electric Co., Ltd Add.:No. 1 Qunli Road,Baoji City,Shaanxi,China 3DD104NPN Silicon Low Frequency High Power Transistor Features: 1. Using triple-diffusion process.Excellent capacity in anti-burnout.Excellent second breakdown capacity. 2. Good temperature stability.Excellent thermal fatigue capability. 3. Implementation of standards: GJB33 A-97 4. Use for Low-speed sw

0.6. Size:183K inchange semiconductor
3dd104e.pdf pdf_icon

INCHANGE Semiconductor isc Product Specificationisc Silicon NPN Power Transistor 3DD104EDESCRIPTIONWith TO-3 packagingLarge collector currentLow collector saturation voltageHigh power dissipationMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use in DC-DC converterDriver of solenoid or motorABSOLUTE

0.7. Size:182K inchange semiconductor
3dd104c.pdf pdf_icon

INCHANGE Semiconductor isc Product Specificationisc Silicon NPN Power Transistor 3DD104CDESCRIPTIONWith TO-3 packagingLarge collector currentLow collector saturation voltageHigh power dissipationMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use in DC-DC converterDriver of solenoid or motorABSOLUTE

0.8. Size:183K inchange semiconductor
3dd101b.pdf pdf_icon

INCHANGE Semiconductor isc Product Specificationisc Silicon NPN Power Transistor 3DD101BDESCRIPTIONWith TO-3 packagingLarge collector currentLow collector saturation voltageHigh power dissipationMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use in DC-DC converterDriver of solenoid or motorABSOLUTE

0.9. Size:183K inchange semiconductor
3dd104d.pdf pdf_icon

INCHANGE Semiconductor isc Product Specificationisc Silicon NPN Power Transistor 3DD104DDESCRIPTIONWith TO-3 packagingLarge collector currentLow collector saturation voltageHigh power dissipationMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use in DC-DC converterDriver of solenoid or motorABSOLUTE

0.10. Size:206K inchange semiconductor
3dd100e.pdf pdf_icon

INCHANGE Semiconductor isc Product Specificationisc Silicon NPN Power Transistor 3DD100EDESCRIPTIONWith TO-66 packagingLarge collector currentLow collector saturation voltageHigh power dissipationMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use in DC-DC converterDriver of solenoid or motorABSOLUTE

0.11. Size:182K inchange semiconductor
3dd101e.pdf pdf_icon

INCHANGE Semiconductor isc Product Specificationisc Silicon NPN Power Transistor 3DD101EDESCRIPTIONWith TO-3 packagingLarge collector currentLow collector saturation voltageHigh power dissipationMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use in DC-DC converterDriver of solenoid or motorABSOLUTE

0.12. Size:209K inchange semiconductor
3dd102a.pdf pdf_icon

isc Silicon NPN Power Transistor 3DD102ADESCRIPTIONCollector-Emitter Breakdown Voltage-: V = 100V(Min.)(BR)CEODC Current Gain-: h = 20(Min.)@I = 2AFE CCollector-Emitter Saturation Voltage-: V )= 0.8V(Max)@ I = 2.5ACE(sat CMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for power amplifier , DC Transform

0.13. Size:184K inchange semiconductor
3dd100c.pdf pdf_icon

E Semiconductor isc Product Specificationisc Silicon NPN Power Transistor 3DD100CDESCRIPTIONWith TO-66 packagingLarge collector currentLow collector saturation voltageHigh power dissipationMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use in DC-DC converterDriver of solenoid or motorABSOLUTE MAXIMU

0.14. Size:184K inchange semiconductor
3dd100b.pdf pdf_icon

INCHANGE Semiconductorisc Silicon NPN Power Transistor 3DD100BDESCRIPTIONWith TO-66 packagingLarge collector currentLow collector saturation voltageHigh power dissipationMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use in DC-DC converterDriver of solenoid or motorABSOLUTE MAXIMUM RATINGS(T =25)

0.15. Size:191K inchange semiconductor
3dd101a.pdf pdf_icon

isc Silicon NPN Power Transistor 3DD101ADESCRIPTIONCollector-Emitter Breakdown Voltage-: V = 100V(Min.)(BR)CEODC Current Gain-: h = 20(Min.)@I = 2AFE CCollector-Emitter Saturation Voltage-: V )= 0.8V(Max)@ I = 2.5ACE(sat CMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for power amplifier,DC-DC converter

0.16. Size:182K inchange semiconductor
3dd102d.pdf pdf_icon

INCHANGE Semiconductor isc Product Specificationisc Silicon NPN Power Transistor 3DD102DDESCRIPTIONWith TO-3 packagingLarge collector currentLow collector saturation voltageHigh power dissipationMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use in DC-DC converterDriver of solenoid or motorFor aud

0.17. Size:182K inchange semiconductor
3dd104a.pdf pdf_icon

INCHANGE Semiconductor isc Product Specificationisc Silicon NPN Power Transistor 3DD104ADESCRIPTIONWith TO-3 packagingLarge collector currentLow collector saturation voltageHigh power dissipationMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use in DC-DC converterDriver of solenoid or motorABSOLUTE

0.18. Size:185K inchange semiconductor
3dd100d.pdf pdf_icon

INCHANGE Semiconductor isc Product Specificationisc Silicon NPN Power Transistor 3DD100DDESCRIPTIONWith TO-66 packagingLarge collector currentLow collector saturation voltageHigh power dissipationMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use in DC-DC converterDriver of solenoid or motorABSOLUTE

0.19. Size:202K inchange semiconductor
3dd103e.pdf pdf_icon

isc Silicon NPN Power Transistor 3DD103EDESCRIPTIONCollector-Emitter Breakdown Voltage-: V = 800V(Min.)(BR)CEODC Current Gain-: h = 10(Min.)@I = 1.5AFE CCollector-Emitter Saturation Voltage-: V )= 4V(Max)@ I = 3ACE(sat CMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for power amplifier , DC-DC converts

0.20. Size:182K inchange semiconductor
3dd101d.pdf pdf_icon

INCHANGE Semiconductor isc Product Specificationisc Silicon NPN Power Transistor 3DD101DDESCRIPTIONWith TO-3 packagingLarge collector currentLow collector saturation voltageHigh power dissipationMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use in DC-DC converterDriver of solenoid or motorABSOLUTE

0.21. Size:210K inchange semiconductor
3dd102c.pdf pdf_icon

isc Silicon NPN Power Transistor 3DD102CDESCRIPTIONCollector-Emitter Breakdown Voltage-: V = 150V(Min.)(BR)CEODC Current Gain-: h = 20(Min.)@I = 2AFE CCollector-Emitter Saturation Voltage-: V )= 1.5V(Max)@ I = 2.5ACE(sat CMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for power amplifier , DC Transform

0.22. Size:186K inchange semiconductor
3dd100a.pdf pdf_icon

isc Silicon NPN Power Transistor 3DD100ADESCRIPTIONWith TO-66 packagingLarge collector currentLow collector saturation voltageHigh power dissipationMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use in DC-DC converterDriver of solenoid or motorABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VA

0.23. Size:182K inchange semiconductor
3dd101c.pdf pdf_icon

INCHANGE Semiconductor isc Product Specificationisc Silicon NPN Power Transistor 3DD101CDESCRIPTIONWith TO-3 packagingLarge collector currentLow collector saturation voltageHigh power dissipationMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use in DC-DC converterDriver of solenoid or motorABSOLUTE

0.24. Size:204K inchange semiconductor
3dd104b.pdf pdf_icon

INCHANGE Semiconductor isc Product Specificationisc Silicon NPN Power Transistor 3DD104BDESCRIPTIONWith TO-3 packagingLarge collector currentLow collector saturation voltageHigh power dissipationMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use in DC-DC converterDriver of solenoid or motorABSOLUTE

Datasheet: 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .