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3DD101 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: 3DD101
   Material: Si
   Polaridad de transistor: NPN

ESPECIFICACIONES MÁXIMAS


   Disipación total del dispositivo (Pc): 50 W
   Tensión colector-base (Vcb): 100 V
   Tensión colector-emisor (Vce): 50 V
   Tensión emisor-base (Veb): 4 V
   Corriente del colector DC máxima (Ic): 5 A
   Temperatura operativa máxima (Tj): 175 °C

CARACTERÍSTICAS ELÉCTRICAS


   Ganancia de corriente contínua (hfe): 15
   Paquete / Cubierta: TO3 TO220 TO257
 

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3DD101 Datasheet (PDF)

 ..1. Size:150K  china
3dd101.pdf pdf_icon

3DD101

3DD101/3DD102 NPN A B C D E F PCM TC=75 50 W ICM 5 A Tjm 175 Tstg -55~150 VCE=10V Rth 2 /W IC=1.5A V(BR)CBO ICB=3mA 100 150 200 250 300 350 V V(BR)CEO ICE=3mA 50 100 150 200 250 300 V V(BR)EBO IEB=1mA 4.0 V ICBO VCB=50V 0.

 0.1. Size:183K  inchange semiconductor
3dd101b.pdf pdf_icon

3DD101

INCHANGE Semiconductor isc Product Specificationisc Silicon NPN Power Transistor 3DD101BDESCRIPTIONWith TO-3 packagingLarge collector currentLow collector saturation voltageHigh power dissipationMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use in DC-DC converterDriver of solenoid or motorABSOLUTE

 0.2. Size:182K  inchange semiconductor
3dd101e.pdf pdf_icon

3DD101

INCHANGE Semiconductor isc Product Specificationisc Silicon NPN Power Transistor 3DD101EDESCRIPTIONWith TO-3 packagingLarge collector currentLow collector saturation voltageHigh power dissipationMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use in DC-DC converterDriver of solenoid or motorABSOLUTE

 0.3. Size:191K  inchange semiconductor
3dd101a.pdf pdf_icon

3DD101

isc Silicon NPN Power Transistor 3DD101ADESCRIPTIONCollector-Emitter Breakdown Voltage-: V = 100V(Min.)(BR)CEODC Current Gain-: h = 20(Min.)@I = 2AFE CCollector-Emitter Saturation Voltage-: V )= 0.8V(Max)@ I = 2.5ACE(sat CMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for power amplifier,DC-DC converter

Otros transistores... 3CK9 , 3DD03T , 3DD04T , 3DD05 , 3DD05T , 3DD1 , 3DD10 , 3DD100 , 2N2222A , 3DD102 , 3DD103 , 3DD104 , 3DD11 , 3DD12 , 3DD122 , 3DD127D3 , 3DD127D5 .

History: 2SD1034 | 2N3250XCSM | 2N3300 | 2SC4274 | BC337-10 | KT3102G | BC327

 

 
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