3DD101 Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: 3DD101

Material: Si

Polaridad de transistor: NPN

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pc): 50 W

Tensión colector-base (Vcb): 100 V

Tensión colector-emisor (Vce): 50 V

Tensión emisor-base (Veb): 4 V

Corriente del colector DC máxima (Ic): 5 A

Temperatura operativa máxima (Tj): 175 °C

CARACTERÍSTICAS ELÉCTRICAS

Ganancia de corriente contínua (hFE): 15

Encapsulados: TO3 TO220 TO257

 Búsqueda de reemplazo de 3DD101

- Selecciónⓘ de transistores por parámetros

 

3DD101 datasheet

 ..1. Size:150K  china
 3dd101.pdf pdf_icon

3DD101

3DD101/3DD102 NPN A B C D E F PCM TC=75 50 W ICM 5 A Tjm 175 Tstg -55 150 VCE=10V Rth 2 /W IC=1.5A V(BR)CBO ICB=3mA 100 150 200 250 300 350 V V(BR)CEO ICE=3mA 50 100 150 200 250 300 V V(BR)EBO IEB=1mA 4.0 V ICBO VCB=50V 0.

 0.1. Size:183K  inchange semiconductor
 3dd101b.pdf pdf_icon

3DD101

INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor 3DD101B DESCRIPTION With TO-3 packaging Large collector current Low collector saturation voltage High power dissipation Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use in DC-DC converter Driver of solenoid or motor ABSOLUTE

 0.2. Size:182K  inchange semiconductor
 3dd101e.pdf pdf_icon

3DD101

INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor 3DD101E DESCRIPTION With TO-3 packaging Large collector current Low collector saturation voltage High power dissipation Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use in DC-DC converter Driver of solenoid or motor ABSOLUTE

 0.3. Size:191K  inchange semiconductor
 3dd101a.pdf pdf_icon

3DD101

isc Silicon NPN Power Transistor 3DD101A DESCRIPTION Collector-Emitter Breakdown Voltage- V = 100V(Min.) (BR)CEO DC Current Gain- h = 20(Min.)@I = 2A FE C Collector-Emitter Saturation Voltage- V )= 0.8V(Max)@ I = 2.5A CE(sat C Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for power amplifier,DC-DC converter

MOSTRAR MÁS

Otros transistores... 3CK9, 3DD03T, 3DD04T, 3DD05, 3DD05T, 3DD1, 3DD10, 3DD100, 2SC1815, 3DD102, 3DD103, 3DD104, 3DD11, 3DD12, 3DD122, 3DD127D3, 3DD127D5