Биполярный транзистор 3DD101 - описание производителя. Основные параметры. Даташиты.
Наименование производителя: 3DD101
Тип материала: Si
Полярность: NPN
Максимальная рассеиваемая мощность (Pc): 50 W
Макcимально допустимое напряжение коллектор-база (Ucb): 100 V
Макcимально допустимое напряжение коллектор-эмиттер (Uce): 50 V
Макcимально допустимое напряжение эмиттер-база (Ueb): 4 V
Макcимальный постоянный ток коллектора (Ic): 5 A
Предельная температура PN-перехода (Tj): 175 °C
Статический коэффициент передачи тока (hfe): 15
Корпус транзистора: TO3 TO220 TO257
3DD101 Datasheet (PDF)
3dd101.pdf
3DD101/3DD102 NPN A B C D E F PCM TC=75 50 W ICM 5 A Tjm 175 Tstg -55~150 VCE=10V Rth 2 /W IC=1.5A V(BR)CBO ICB=3mA 100 150 200 250 300 350 V V(BR)CEO ICE=3mA 50 100 150 200 250 300 V V(BR)EBO IEB=1mA 4.0 V ICBO VCB=50V 0.
3dd101b.pdf
INCHANGE Semiconductor isc Product Specificationisc Silicon NPN Power Transistor 3DD101BDESCRIPTIONWith TO-3 packagingLarge collector currentLow collector saturation voltageHigh power dissipationMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use in DC-DC converterDriver of solenoid or motorABSOLUTE
3dd101e.pdf
INCHANGE Semiconductor isc Product Specificationisc Silicon NPN Power Transistor 3DD101EDESCRIPTIONWith TO-3 packagingLarge collector currentLow collector saturation voltageHigh power dissipationMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use in DC-DC converterDriver of solenoid or motorABSOLUTE
3dd101a.pdf
isc Silicon NPN Power Transistor 3DD101ADESCRIPTIONCollector-Emitter Breakdown Voltage-: V = 100V(Min.)(BR)CEODC Current Gain-: h = 20(Min.)@I = 2AFE CCollector-Emitter Saturation Voltage-: V )= 0.8V(Max)@ I = 2.5ACE(sat CMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for power amplifier,DC-DC converter
3dd101d.pdf
INCHANGE Semiconductor isc Product Specificationisc Silicon NPN Power Transistor 3DD101DDESCRIPTIONWith TO-3 packagingLarge collector currentLow collector saturation voltageHigh power dissipationMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use in DC-DC converterDriver of solenoid or motorABSOLUTE
3dd101c.pdf
INCHANGE Semiconductor isc Product Specificationisc Silicon NPN Power Transistor 3DD101CDESCRIPTIONWith TO-3 packagingLarge collector currentLow collector saturation voltageHigh power dissipationMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use in DC-DC converterDriver of solenoid or motorABSOLUTE
Другие транзисторы... 2SA1771 , 2SA178 , 2SA1790 , 2SA1791 , 2SA1792 , 2SA1793 , 2SA1794 , 2SA1795 , 13009 , 2SA1799 , 2SA17H , 2SA18 , 2SA180 , 2SA1800 , 2SA1800O , 2SA1800R , 2SA1800Y .
