3DD13002B1 Todos los transistores

 

3DD13002B1 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: 3DD13002B1
   Material: Si
   Polaridad de transistor: NPN

ESPECIFICACIONES MÁXIMAS


   Disipación total del dispositivo (Pc): 0.8 W
   Tensión colector-base (Vcb): 600 V
   Tensión colector-emisor (Vce): 400 V
   Tensión emisor-base (Veb): 9 V
   Corriente del colector DC máxima (Ic): 0.5 A
   Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   Transición de frecuencia (ft): 5 MHz
   Ganancia de corriente contínua (hfe): 15
   Paquete / Cubierta: TO92

 Búsqueda de reemplazo de transistor bipolar 3DD13002B1

 

3DD13002B1 Datasheet (PDF)

 ..1. Size:182K  crhj
3dd13002b1.pdf

3DD13002B1
3DD13002B1

NPN R 3DD13002 B1 3DD13002 B1 NPN VCEO 400 V IC 0.5 A Ptot Ta=25 0.8 W

 ..2. Size:197K  wuxi china
3dd13002b1.pdf

3DD13002B1
3DD13002B1

NPN R 3DD13002 B1 3DD13002 B1 NPN VCEO 400 V IC 0.5 A Ptot Ta=25 0.8 W

 0.1. Size:178K  crhj
3dd13002b1-7.pdf

3DD13002B1
3DD13002B1

NPN R 3DD13002 B1-7 3DD13002 B1-7 VCEO 450 V NPN IC 0.5 A Ptot Ta=25 0.7 W

 0.2. Size:183K  crhj
3dd13002b1d.pdf

3DD13002B1
3DD13002B1

NPN R 3DD13002 B1D 3DD13002 B1D VCEO 400 V NPN IC 0.5 A Ptot Ta=25 0.8 W

 5.1. Size:842K  jiangsu
3dd13002b.pdf

3DD13002B1
3DD13002B1

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92 Plastic-Encapsulate Transistors 3DD13002B TRANSISTORNPN TO-92 FEATURE Power Switching Applications 1.EMITTER 2. COLLECTOR 3. BASE Equivalent Circuit 13002B=Device code 13002B Solid dot=Green molding compound device, XXX if none,the normal deviceXXX=Code 1ORDERING INFORMATION Par

 5.2. Size:398K  lge
3dd13002b.pdf

3DD13002B1
3DD13002B1

3DD13002B(NPN) TO-92 Bipolar TransistorsTO-92 1. EMITTER 4.45 5.21 2. COLLECTOR 3. BASE 4.322.92 5.33MINFeatures power switching applications 3.43MIN 2.412.67MAXIMUM RATINGS (TA=25 unless otherwise noted) 3.18Symbol Parameter Value Units2.034.192.67VCBO Collector-Base Voltage 600 V 1.141.402.03VCEO Collector-Emitter Voltage 400 V 2.67

 5.3. Size:149K  wietron
3dd13002b.pdf

3DD13002B1
3DD13002B1

3DD13002BSwitch Mode NPN TransistorsTO-921. EMITTER122. COLLECTOR33. BASEABSOLUTE MAXIMUM RATINGS (Ta=25 C)Rating SymbolValue UnitCollector-Emitter Voltage VCEO 400 VdcCollector-Base Voltage VCBO 600VdcEmitter-Base VOltage VEBO6.0 VdcCollector Current IC1.0 AdcPD 1.0Total Device Dissipation T =25 C WAJunction Temperature T 150j CStorage, Tempera

Otros transistores... 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .

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History: DTC123EM

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