3DD1724 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: 3DD1724
Material: Si
Polaridad de transistor: NPN
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 60 W
Tensión colector-base (Vcb): 120 V
Tensión colector-emisor (Vce): 80 V
Tensión emisor-base (Veb): 10 V
Corriente del colector DC máxima (Ic): 5 A
Temperatura operativa máxima (Tj): 175 °C
CARACTERÍSTICAS ELÉCTRICAS
Ganancia de corriente contínua (hfe): 15
Paquete / Cubierta: TO258 TO3
Búsqueda de reemplazo de 3DD1724
3DD1724 Datasheet (PDF)
3dd1724.pdf

3DD1724 NPN PCM TC=75 60 W ICM 5 A Tjm 175 Tstg -55~150 VCE=10V Rth 1.67 /W IC=1.5A V(BR)CBO ICB=5mA 120 V V(BR)CEO ICE=7mA 80 V V(BR)EBO IEB=10mA 10 V ICBO VCB=80V 0.1 mA ICEO VCE=50V 0.5 mA IEBO VEB=4V 0.1 mA VBEsat 1.5
3dd176.pdf

3DD175/3DD176 NPN A B C D E F G PCM TC=75 300 W ICM 30 A Tjm 175 Tstg -55~150 VCE=10V Rth 0.33 /W IC=5A V(BR)CBO ICB=5mA 80 150 200 250 350 400 600 V V(BR)CEO ICE=5mA 50 100 150 200 250 300 400 V V(BR)EBO IEB=15mA 5.0 V
3dd175.pdf

3DD175/3DD176 NPN A B C D E F G PCM TC=75 300 W ICM 30 A Tjm 175 Tstg -55~150 VCE=10V Rth 0.33 /W IC=5A V(BR)CBO ICB=5mA 80 150 200 250 350 400 600 V V(BR)CEO ICE=5mA 50 100 150 200 250 300 400 V V(BR)EBO IEB=15mA 5.0 V
3dd171.pdf

Shaanxi Qunli Electric Co., Ltd Add.:No. 1 Qunli Road,Baoji City,Shaanxi,China 3DD171(172), 3DD175(176) NPN Silicon Low Frequency High Power Transistor Features: 1. Using triple-diffusion process.Excellent capacity in anti-burnout.Excellent second breakdown capacity. 2. Good temperature stability.Excellent thermal fatigue capability. 3. Implementation of standards: GJB33 A-97 4. U
Otros transistores... 3DD155 , 3DD157 , 3DD159 , 3DD162 , 3DD162-S , 3DD164 , 3DD167 , 3DD171 , TIP31C , 3DD175 , 3DD176 , 3DD2028LL , 3DD203 , 3DD204 , 3DD2073 , 3DD21 , 3DD2334 .
History: 2N4874 | BFY45 | 2N1146A | BC349 | DTS3704B | 2SC395A | SFT250
History: 2N4874 | BFY45 | 2N1146A | BC349 | DTS3704B | 2SC395A | SFT250



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