3DD1724 Specs and Replacement
Type Designator: 3DD1724
Material of Transistor: Si
Polarity: NPN
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 60 W
Maximum Collector-Base Voltage |Vcb|: 120 V
Maximum Collector-Emitter Voltage |Vce|: 80 V
Maximum Emitter-Base Voltage |Veb|: 10 V
Maximum Collector Current |Ic max|: 5 A
Max. Operating Junction Temperature (Tj): 175 °C
Electrical Characteristics
Forward Current Transfer Ratio (hFE), MIN: 15
3DD1724 Substitution
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3DD1724 datasheet
3DD1724 NPN PCM TC=75 60 W ICM 5 A Tjm 175 Tstg -55 150 VCE=10V Rth 1.67 /W IC=1.5A V(BR)CBO ICB=5mA 120 V V(BR)CEO ICE=7mA 80 V V(BR)EBO IEB=10mA 10 V ICBO VCB=80V 0.1 mA ICEO VCE=50V 0.5 mA IEBO VEB=4V 0.1 mA VBEsat 1.5... See More ⇒
3DD175/3DD176 NPN A B C D E F G PCM TC=75 300 W ICM 30 A Tjm 175 Tstg -55 150 VCE=10V Rth 0.33 /W IC=5A V(BR)CBO ICB=5mA 80 150 200 250 350 400 600 V V(BR)CEO ICE=5mA 50 100 150 200 250 300 400 V V(BR)EBO IEB=15mA 5.0 V ... See More ⇒
3DD175/3DD176 NPN A B C D E F G PCM TC=75 300 W ICM 30 A Tjm 175 Tstg -55 150 VCE=10V Rth 0.33 /W IC=5A V(BR)CBO ICB=5mA 80 150 200 250 350 400 600 V V(BR)CEO ICE=5mA 50 100 150 200 250 300 400 V V(BR)EBO IEB=15mA 5.0 V ... See More ⇒
Shaanxi Qunli Electric Co., Ltd Add. No. 1 Qunli Road,Baoji City,Shaanxi,China 3DD171(172), 3DD175(176) NPN Silicon Low Frequency High Power Transistor Features 1. Using triple-diffusion process.Excellent capacity in anti-burnout.Excellent second breakdown capacity. 2. Good temperature stability.Excellent thermal fatigue capability. 3. Implementation of standards GJB33 A-97 4. U... See More ⇒
Detailed specifications: 3DD155, 3DD157, 3DD159, 3DD162, 3DD162-S, 3DD164, 3DD167, 3DD171, A733, 3DD175, 3DD176, 3DD2028LL, 3DD203, 3DD204, 3DD2073, 3DD21, 3DD2334
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