3DD264
. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: 3DD264
Material: Si
Polaridad de transistor: NPN
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 100
W
Tensión colector-emisor (Vce): 300
V
Tensión emisor-base (Veb): 5
V
Corriente del colector DC máxima (Ic): 7
A
Temperatura operativa máxima (Tj): 175
°C
CARACTERÍSTICAS ELÉCTRICAS
Ganancia de corriente contínua (hfe): 7
Paquete / Cubierta:
TO3
Búsqueda de reemplazo de transistor bipolar 3DD264
3DD264
Datasheet (PDF)
..1. Size:32K shaanxi
3dd264.pdf 
Shaanxi Qunli Electric Co., Ltd Add.:No. 1 Qunli Road,Baoji City,Shaanxi,China 3DD264(266), 3DD267(269) NPN Silicon Low Frequency High Power Transistor Features: 1. Using triple-diffusion process.Excellent capacity in anti-burnout.Excellent second breakdown capacity. 2. Good temperature stability.Excellent thermal fatigue capability. 3. Implementation of standards: GJB33 A-97, QZJ84
9.1. Size:456K blue-rocket-elect
2sd2625z9 br3dd2625z9p.pdf
2SD2625Z9(BR3DD2625Z9P) Rev.C Feb.-2015 DATA SHEET / Descriptions TO-3P NPN Silicon NPN Transistor in a TO-3P Plastic Package. / Features High Speed Switching / Applications High frequency electronic lighting ballast applications. / Equivalent Circuit /
9.2. Size:457K blue-rocket-elect
2sd2625v9 br3dd2625v9p.pdf
2SD2625V9(BR3DD2625V9P) Rev.C Feb.-2015 DATA SHEET / Descriptions TO-3P NPN Silicon NPN Transistor in a TO-3P Plastic Package. / Features High Speed Switching / Applications High frequency electronic lighting ballast applications. / Equivalent Circuit /
9.3. Size:445K blue-rocket-elect
2sd2625x9 br3dd2625x9p.pdf
2SD2625X9(BR3DD2625X9P) Rev.C Feb.-2015 DATA SHEET / Descriptions TO-3P NPN Silicon NPN Transistor in a TO-3P Plastic Package. / Features High Speed Switching / Applications High frequency electronic lighting ballast applications. / Equivalent Circuit /
9.4. Size:151K china
3dd260.pdf
3DD260 NPN A B C D E F PCM TC=75 50 W ICM 3.5 A Tjm 175 Tstg -55~150 VCE=10V Rth 2 /W IC=1.5A V(BR)CBO ICB=3mA 500 700 900 1100 1300 1500 V V(BR)CEO ICE=3mA 300 400 500 600 700 800 V V(BR)EBO IEB=1mA 5.0 V ICBO VCB=100V 0.
9.5. Size:133K china
3dd2655.pdf
3DD2655(3SC2655) NPN A B C D E PCM Tc=75 0.9 W ICM 2 A Tjm 175 Tstg -55~150 VCE=10V Rth 111 /W IC=0.2A V(BR)CBO ICB=0.1mA 20 35 50 80 120 V V(BR)CEO ICE=0.1mA 20 35 50 80 120 V V(BR)EBO IEB=0.1mA 4.0 V ICBO VCB=10V 20 A
9.6. Size:26K shaanxi
3dd262.pdf
Shaanxi Qunli Electric Co., Ltd Add.:No. 1 Qunli Road,Baoji City,Shaanxi,China 3DD262(3DD263)NPN Silicon Low Frequency High Power Transistor Features: 1. Using triple-diffusion process.Excellent capacity in anti-burnout.Excellent second breakdown capacity. 2. Good temperature stability.Excellent thermal fatigue capability. 3. Implementation of standards: GJB33 A-97, QZJ840611A, QZJ8
9.7. Size:26K shaanxi
3dd267.pdf
Shaanxi Qunli Electric Co., Ltd Add.:No. 1 Qunli Road,Baoji City,Shaanxi,China 3DD267(3DD269)NPN Silicon Low Frequency High Power Transistor Features: 1. Using triple-diffusion process.Excellent capacity in anti-burnout.Excellent second breakdown capacity. 2. Good temperature stability.Excellent thermal fatigue capability. 3. Implementation of standards: GJB33 A-97, QZJ840611A, QZJ8
Otros transistores... 2SA1771
, 2SA178
, 2SA1790
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, 2SA1800O
, 2SA1800R
, 2SA1800Y
.
