Биполярный транзистор 3DD264 - описание производителя. Основные параметры. Даташиты.
Наименование производителя: 3DD264
Тип материала: Si
Полярность: NPN
Максимальная рассеиваемая мощность (Pc): 100 W
Макcимально допустимое напряжение коллектор-эмиттер (Uce): 300 V
Макcимально допустимое напряжение эмиттер-база (Ueb): 5 V
Макcимальный постоянный ток коллектора (Ic): 7 A
Предельная температура PN-перехода (Tj): 175 °C
Статический коэффициент передачи тока (hfe): 7
Корпус транзистора: TO3
3DD264 Datasheet (PDF)
3dd264.pdf
Shaanxi Qunli Electric Co., Ltd Add.:No. 1 Qunli Road,Baoji City,Shaanxi,China 3DD264(266), 3DD267(269) NPN Silicon Low Frequency High Power Transistor Features: 1. Using triple-diffusion process.Excellent capacity in anti-burnout.Excellent second breakdown capacity. 2. Good temperature stability.Excellent thermal fatigue capability. 3. Implementation of standards: GJB33 A-97, QZJ84
2sd2625z9 br3dd2625z9p.pdf
2SD2625Z9(BR3DD2625Z9P) Rev.C Feb.-2015 DATA SHEET / Descriptions TO-3P NPN Silicon NPN Transistor in a TO-3P Plastic Package. / Features High Speed Switching / Applications High frequency electronic lighting ballast applications. / Equivalent Circuit /
2sd2625v9 br3dd2625v9p.pdf
2SD2625V9(BR3DD2625V9P) Rev.C Feb.-2015 DATA SHEET / Descriptions TO-3P NPN Silicon NPN Transistor in a TO-3P Plastic Package. / Features High Speed Switching / Applications High frequency electronic lighting ballast applications. / Equivalent Circuit /
2sd2625x9 br3dd2625x9p.pdf
2SD2625X9(BR3DD2625X9P) Rev.C Feb.-2015 DATA SHEET / Descriptions TO-3P NPN Silicon NPN Transistor in a TO-3P Plastic Package. / Features High Speed Switching / Applications High frequency electronic lighting ballast applications. / Equivalent Circuit /
3dd260.pdf
3DD260 NPN A B C D E F PCM TC=75 50 W ICM 3.5 A Tjm 175 Tstg -55~150 VCE=10V Rth 2 /W IC=1.5A V(BR)CBO ICB=3mA 500 700 900 1100 1300 1500 V V(BR)CEO ICE=3mA 300 400 500 600 700 800 V V(BR)EBO IEB=1mA 5.0 V ICBO VCB=100V 0.
3dd2655.pdf
3DD2655(3SC2655) NPN A B C D E PCM Tc=75 0.9 W ICM 2 A Tjm 175 Tstg -55~150 VCE=10V Rth 111 /W IC=0.2A V(BR)CBO ICB=0.1mA 20 35 50 80 120 V V(BR)CEO ICE=0.1mA 20 35 50 80 120 V V(BR)EBO IEB=0.1mA 4.0 V ICBO VCB=10V 20 A
3dd262.pdf
Shaanxi Qunli Electric Co., Ltd Add.:No. 1 Qunli Road,Baoji City,Shaanxi,China 3DD262(3DD263)NPN Silicon Low Frequency High Power Transistor Features: 1. Using triple-diffusion process.Excellent capacity in anti-burnout.Excellent second breakdown capacity. 2. Good temperature stability.Excellent thermal fatigue capability. 3. Implementation of standards: GJB33 A-97, QZJ840611A, QZJ8
3dd267.pdf
Shaanxi Qunli Electric Co., Ltd Add.:No. 1 Qunli Road,Baoji City,Shaanxi,China 3DD267(3DD269)NPN Silicon Low Frequency High Power Transistor Features: 1. Using triple-diffusion process.Excellent capacity in anti-burnout.Excellent second breakdown capacity. 2. Good temperature stability.Excellent thermal fatigue capability. 3. Implementation of standards: GJB33 A-97, QZJ840611A, QZJ8
Другие транзисторы... 2SA1801 , 2SA1802 , 2SA1802A , 2SA1803 , 2SA1803O , 2SA1803R , 2SA1804 , 2SA1804O , BD777 , 2SA1805 , 2SA1805O , 2SA1805R , 2SA1806 , 2SA181 , 2SA1810 , 2SA1810B , 2SA1810C .
Список транзисторов
Обновления
BJT: SBT42 | 2SA200-Y | 2SA200-O | 2SD882-Q | 2SD882-P | 2SD882-E | 2SC945-L | 2SC945-H | 2SC4226-R23 | 2SC3357-F | 2SC3357-E | 2SC3356-R26 | 2SC3356-R24 | 2SC3356-R23 | 2SB772-Q | 2SB772-P | 2SB772-E | 2SA1015-L | 2SA1015-H | HSS8550 | HSS8050