3DD3
. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: 3DD3
Material: Si
Polaridad de transistor: NPN
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 5
W
Tensión colector-base (Vcb): 50
V
Tensión colector-emisor (Vce): 30
V
Tensión emisor-base (Veb): 5
V
Corriente del colector DC máxima (Ic): 1
A
Temperatura operativa máxima (Tj): 175
°C
CARACTERÍSTICAS ELÉCTRICAS
Ganancia de corriente contínua (hfe): 15
Paquete / Cubierta:
TO276AB
TO220
TO257
- Selección de transistores por parámetros
3DD3
Datasheet (PDF)
..1. Size:150K china
3dd3.pdf 
3DD3 NPN A B C D E F PCM TC=25 5 W ICM 1 A Tjm 175 Tstg -55~150 VCE=10V Rth 30 /W IC=0.1A V(BR)CBO ICB=5mA 50 80 110 150 200 250 V V(BR)CEO ICE=5mA 30 50 80 110 150 200 V V(BR)EBO IEB=1mA 5.0 V ICBO VCB=50V 0.5 mA
0.1. Size:245K lge
3dd3853.pdf
3DD3853(NPN)TO-220F Bipolar TransistorsTO-220F1. BASE 2. COLLECTOR 3. EMITTE 1 2 3FeaturesHigh Current Gain Saturation Voltage Low Power dissipation PCW : 2 W (Tamb=25 ) 25 W (Tcase=25) MAXIMUM RATINGS (TA=25 unless otherwise noted) Dimensions in inches and (millimeters)Symbol Parameter Value UnitsVCBO Collector-Base Voltage 60 V VCEO Collect
0.2. Size:460K lge
3dd3852.pdf
3DD3852(NPN)TO-220F Bipolar TransistorsTO-220F1. BASE 2. COLLECTOR 3. EMITTE 1 2 3FeaturesHigh Current Gain Saturation Voltage Low Power dissipation PCW : 2 W (Tamb=25 ) 25 W (Tcase=25) Dimensions in inches and (millimeters)MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value UnitsVCBO Collector-Base Voltage 80 VVCEO Collector-
0.3. Size:197K jilin sino
3dd3402.pdf
www.DataSheet4U.comR NO>e'Y{X[vSgWvfSO{ D3402 NTyr'` %S:VCBO=1700V %qTSMNO:VCE(sat)=5V(max.) %_sQ^:tf=0.7S(max.) %S`'` %sORoHSNT ;N(u %i_r5u:gLQ5u _~z^SSI{He5u i 3DD3402 /f
0.4. Size:550K jilin sino
3dd3997.pdf
NPN HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR R3DD3997 MAIN CHARACTERISTICS Package I 30A CV 800V CEOP (TO-3PLH) 250W C APPLICATIONS High frequency switching power supply High frequency power transform Commo
0.5. Size:143K crhj
3dd3040a3.pdf
NPN R 3DD3040 A3 3DD3040 A3 NPN VCEO 450 V IC 2 A Ptot W TC=25 30
0.6. Size:144K crhj
3dd3040 a3.pdf
NPN R 3DD3040 A3 3DD3040 A3 NPN VCEO 450 V IC 2 A Ptot W TC=25 30
0.7. Size:178K crhj
3dd3015a1.pdf
NPN R 3DD3015 A1 3DD3015 A1 NPN VCEO 450 V IC 1.2 A Ptot Ta=25 0.8 W
0.8. Size:151K crhj
3dd3145 a6.pdf
NPN R 3DD3145 A6 3DD3145 A6 NPN VCEO 600 V IC 1.3 A Ptot TC=25 50 W
0.9. Size:146K crhj
3dd3015 a3.pdf
NPN R 3DD3015 A3 3DD3015 A3 NPN VCEO 450 V IC 1.2 A Ptot Tc=25 25 W
0.10. Size:153K crhj
3dd3145 a8.pdf
NPN R 3DD3145 A8 3DD3145 A8 NPN VCEO 700 V IC 1.3 A Ptot W TC=25 60
0.11. Size:153K crhj
3dd3150 a8.pdf
NPN R 3DD3150 A8 3DD3150 A8 NPN VCEO 800 V IC 3 A Ptot W TC=25 40
0.12. Size:178K crhj
3dd3015 a1.pdf
NPN R 3DD3015 A1 3DD3015 A1 NPN VCEO 450 V IC 1.2 A Ptot Ta=25 0.8 W
0.13. Size:153K crhj
3dd3150a8.pdf
NPN R 3DD3150 A8 3DD3150 A8 NPN VCEO 800 V IC 3 A Ptot W TC=25 40
0.14. Size:178K crhj
3dd3040 a1.pdf
NPN R 3DD3040 A1 3DD3040 A1-H NPN VCEO 450 V IC 2 A Ptot Ta=25 0.8 W
0.15. Size:146K crhj
3dd3015a3.pdf
NPN R 3DD3015 A3 3DD3015 A3 NPN VCEO 450 V IC 1.2 A Ptot Tc=25 25 W
0.16. Size:160K crhj
3dd3040a4.pdf
NPN R 3DD3040 A4 3DD3040 A4 NPN VCEO 450 V IC 2 A Ptot W TC=25 30
0.17. Size:149K crhj
3dd3040a6.pdf
NPN R 3DD3040 A6 3DD3040 A6 NPN VCEO 450 V IC 2 A Ptot W TC=25 50
0.18. Size:160K crhj
3dd3020a4.pdf
NPN R 3DD3020 A4 3DD3020 A4 NPN VCEO 450 V IC 1.5 A Ptot Tc=25 30 W
0.19. Size:150K crhj
3dd3020 a6.pdf
NPN R 3DD3020 A6 3DD3020 A6 NPN VCEO 450 V IC 1.5 A Ptot Tc=25 50 W
0.20. Size:158K crhj
3dd3320an.pdf
NPN R 3DD3320 AN 3DD3320 AN NPN VCEO 400 V IC 15 A Ptot TC=25 120 W
0.21. Size:145K crhj
3dd3040a7.pdf
NPN R 3DD3040 A7 3DD3040 A7 NPN VCEO 450 V IC 2 A Ptot W TC=25 50
0.22. Size:159K crhj
3dd3320 an.pdf
NPN R 3DD3320 AN 3DD3320 AN NPN VCEO 400 V IC 15 A Ptot TC=25 120 W
0.23. Size:149K crhj
3dd3040 a6.pdf
NPN R 3DD3040 A6 3DD3040 A6 NPN VCEO 450 V IC 2 A Ptot W TC=25 50
0.24. Size:148K crhj
3dd3145a6.pdf
NPN R 3DD3145 A6 3DD3145 A6 NPN VCEO 600 V IC 1.3 A Ptot W TC=25 50
0.25. Size:178K crhj
3dd3040a1.pdf
NPN R 3DD3040 A1 3DD3040 A1-H NPN VCEO 450 V IC 2 A Ptot Ta=25 0.8 W
0.26. Size:146K crhj
3dd3040 a7.pdf
NPN R 3DD3040 A7 3DD3040 A7 NPN VCEO 450 V IC 2 A Ptot W TC=25 50
0.27. Size:152K crhj
3dd3145a8.pdf
NPN R 3DD3145 A8 3DD3145 A8 NPN VCEO 700 V IC 1.3 A Ptot W TC=25 60
0.28. Size:150K crhj
3dd3020a6.pdf
NPN R 3DD3020 A6 3DD3020 A6 NPN VCEO 450 V IC 1.5 A Ptot Tc=25 50 W
0.29. Size:147K crhj
3dd3020a3.pdf
NPN R 3DD3020 A3 3DD3020 A3 NPN VCEO 450 V IC 1.5 A Ptot Tc=25 30 W
0.30. Size:147K crhj
3dd3020 a3.pdf
NPN R 3DD3020 A3 3DD3020 A3 NPN VCEO 450 V IC 1.5 A Ptot Tc=25 30 W
0.31. Size:151K china
3dd3055.pdf
3DD3055(2N3055) NPN A B C D E F PCM TC=25 100 W ICM 15 A Tjm 175 Tstg -55~150 VCE=10V Rth 1.5 /W IC=3A V(BR)CBO ICB=5mA 80 150 200 250 350 400 V V(BR)CEO ICE=5mA 50 100 150 200 250 300 V V(BR)EBO IEB=5mA 5.0 V ICBO VCB=50V
0.32. Size:103K china
3dd31ct4.pdf
LJ2015-463DD31CT4 NPN P T =25 1 Wtot AI 3 ACI 5 ACMT 150 jmT -55~150 stgV I =1mA 100 V(BR)CBO CBV I =1mA 100 V(BR)CEO CEV I =1mA 5.0 V(BR)EBO EBI V =60V 50 ACEO CBI V =5V 0.1 mAEBO CEI =3ACV 1.2 VC
0.33. Size:346K lzg
3dd3150a.pdf
2SC3150A(3DD3150A) NPN /SILICON NPN TRANSISTOR : Purpose: Switching regulator applications. : Features: High V , high speed switching, wide ASO. CEO/Absolute maximum ratings(Ta=25) Symbol Rating Unit V 1000 V CBO V 750 V
0.34. Size:251K lzg
3dd3853.pdf
2SC3853(3DD3853) NPN /SILICON NPN TRANSISTOR Application: Applications for pillow distortion adjustment for Color TV and low voltage adjustment . : Features: Low Saturation VoltageExcellent DC current characteristics /Absolute maximum ra
0.35. Size:138K lzg
3dd31a.pdf
TIP31(3DD31) NPN /SILICON NPN TRANSISTOR : Purpose: Medium power linear switching applications. : TIP32(3CD32) Features: Complement to TIP32(3CD32). /Absolute maximum ratings(Ta=25) Symbol Rating Unit Symbol RatingUnitTIP31 40 V 5.
0.36. Size:138K lzg
3dd31.pdf
TIP31(3DD31) NPN /SILICON NPN TRANSISTOR : Purpose: Medium power linear switching applications. : TIP32(3CD32) Features: Complement to TIP32(3CD32). /Absolute maximum ratings(Ta=25) Symbol Rating Unit Symbol RatingUnitTIP31 40 V 5.
0.37. Size:358K lzg
3dd313.pdf
2SD313(3DD313) NPN /SILICON NPN TRANSISTOR : Purpose: Low frequency power amplifier applications. /Absolute maximum ratings(Ta=25) Symbol Rating Unit V 60 V CBO V 60 V CEO V 5.0 V EBO I 3.0 A C I 8.0 A CPP (T =25) 1.75 W C a P (T =25) 30 W C CT 150
0.38. Size:138K lzg
3dd31b.pdf
TIP31(3DD31) NPN /SILICON NPN TRANSISTOR : Purpose: Medium power linear switching applications. : TIP32(3CD32) Features: Complement to TIP32(3CD32). /Absolute maximum ratings(Ta=25) Symbol Rating Unit Symbol RatingUnitTIP31 40 V 5.
0.39. Size:138K lzg
3dd31c.pdf
TIP31(3DD31) NPN /SILICON NPN TRANSISTOR : Purpose: Medium power linear switching applications. : TIP32(3CD32) Features: Complement to TIP32(3CD32). /Absolute maximum ratings(Ta=25) Symbol Rating Unit Symbol RatingUnitTIP31 40 V 5.
0.40. Size:167K wuxi china
3dd3040a3.pdf
RNPN 3DD3040 A3 3DD3040 A3 NPN VCEO 450 V IC 2 A Ptot TC=25 30 W
0.41. Size:200K inchange semiconductor
3dd303a.pdf
isc Silicon NPN Power Transistor 3DD303ADESCRIPTIONCollector-Emitter Breakdown Voltage-: V = 40V(Min)(BR)CEOCollector-Emitter Saturation Voltage-: V = 1.5V(Max) @I = 3ACE(sat) CMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for B/W TV vertical output applications.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL
0.42. Size:201K inchange semiconductor
3dd301d.pdf
isc Silicon NPN Power Transistor 3DD301DDESCRIPTIONCollector-Emitter Breakdown Voltage-: V = 150V(Min)(BR)CEOCollector-Emitter Saturation Voltage-: V = 1.5V(Max) @I = 3ACE(sat) CMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for B/W TV vertical output applications.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL
0.43. Size:201K inchange semiconductor
3dd303b.pdf
isc Silicon NPN Power Transistor 3DD303BDESCRIPTIONCollector-Emitter Breakdown Voltage-: V = 60V(Min)(BR)CEOCollector-Emitter Saturation Voltage-: V = 0.6V(Max) @I = 0.5ACE(sat) CMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for B/W TV vertical output applications.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBO
0.44. Size:201K inchange semiconductor
3dd301c.pdf
isc Silicon NPN Power Transistor 3DD301CDESCRIPTIONCollector-Emitter Breakdown Voltage-: V = 100V(Min)(BR)CEOCollector-Emitter Saturation Voltage-: V = 2.0V(Max) @I = 3ACE(sat) CMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for B/W TV vertical output applications.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL
0.45. Size:202K inchange semiconductor
3dd301b.pdf
isc Silicon NPN Power Transistor 3DD301BDESCRIPTIONCollector-Emitter Breakdown Voltage-: V = 50V(Min)(BR)CEOCollector-Emitter Saturation Voltage-: V = 2.0V(Max) @I = 3ACE(sat) CMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for B/W TV vertical output applications.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL
0.46. Size:212K inchange semiconductor
3dd3997.pdf
isc Silicon NPN Power Transistor 3DD3997DESCRIPTIONHigh Switching SpeedHigh Breakdown Voltage-: V = 1200V(Min)(BR)CBO100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operation.APPLICATIONSHigh frequency switching power supplyHigh frequency power transformCommonly power amplifier circuitABSOLUTE MAXIMUM RATINGS(T
0.47. Size:206K inchange semiconductor
3dd303c.pdf
isc Silicon NPN Power Transistor 3DD303CDESCRIPTIONCollector-Emitter Breakdown Voltage-: V = 100V(Min)(BR)CEOCollector-Emitter Saturation Voltage-: V = 1.5V(Max) @I = 3ACE(sat) CMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for B/W TV vertical output applications.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL
Otros transistores... 2SA1771
, 2SA178
, 2SA1790
, 2SA1791
, 2SA1792
, 2SA1793
, 2SA1794
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, 2SA1799
, 2SA17H
, 2SA18
, 2SA180
, 2SA1800
, 2SA1800O
, 2SA1800R
, 2SA1800Y
.
History: KT9101AC
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