3DD3 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

3DD3 NPN A B C D E F PCM TC=25 5 W ICM 1 A Tjm 175 Tstg -55~150 VCE=10V Rth 30 /W IC=0.1A V(BR)CBO ICB=5mA 50 80 110 150 200 250 V V(BR)CEO ICE=5mA 30 50 80 110 150 200 V V(BR)EBO IEB=1mA 5.0 V ICBO VCB=50V 0.5 mA

3DD3853(NPN)TO-220F Bipolar TransistorsTO-220F1. BASE 2. COLLECTOR 3. EMITTE 1 2 3FeaturesHigh Current Gain Saturation Voltage Low Power dissipation PCW : 2 W (Tamb=25 ) 25 W (Tcase=25) MAXIMUM RATINGS (TA=25 unless otherwise noted) Dimensions in inches and (millimeters)Symbol Parameter Value UnitsVCBO Collector-Base Voltage 60 V VCEO Collect

3DD3852(NPN)TO-220F Bipolar TransistorsTO-220F1. BASE 2. COLLECTOR 3. EMITTE 1 2 3FeaturesHigh Current Gain Saturation Voltage Low Power dissipation PCW : 2 W (Tamb=25 ) 25 W (Tcase=25) Dimensions in inches and (millimeters)MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value UnitsVCBO Collector-Base Voltage 80 VVCEO Collector-

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NPN HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR R3DD3997 MAIN CHARACTERISTICS Package I 30A CV 800V CEOP (TO-3PLH) 250W C APPLICATIONS High frequency switching power supply High frequency power transform Commo

NPN R 3DD3040 A3 3DD3040 A3 NPN VCEO 450 V IC 2 A Ptot W TC=25 30

NPN R 3DD3040 A3 3DD3040 A3 NPN VCEO 450 V IC 2 A Ptot W TC=25 30

NPN R 3DD3015 A1 3DD3015 A1 NPN VCEO 450 V IC 1.2 A Ptot Ta=25 0.8 W

NPN R 3DD3145 A6 3DD3145 A6 NPN VCEO 600 V IC 1.3 A Ptot TC=25 50 W

NPN R 3DD3015 A3 3DD3015 A3 NPN VCEO 450 V IC 1.2 A Ptot Tc=25 25 W

NPN R 3DD3145 A8 3DD3145 A8 NPN VCEO 700 V IC 1.3 A Ptot W TC=25 60

NPN R 3DD3150 A8 3DD3150 A8 NPN VCEO 800 V IC 3 A Ptot W TC=25 40

NPN R 3DD3015 A1 3DD3015 A1 NPN VCEO 450 V IC 1.2 A Ptot Ta=25 0.8 W

NPN R 3DD3150 A8 3DD3150 A8 NPN VCEO 800 V IC 3 A Ptot W TC=25 40

NPN R 3DD3040 A1 3DD3040 A1-H NPN VCEO 450 V IC 2 A Ptot Ta=25 0.8 W

NPN R 3DD3015 A3 3DD3015 A3 NPN VCEO 450 V IC 1.2 A Ptot Tc=25 25 W

NPN R 3DD3040 A4 3DD3040 A4 NPN VCEO 450 V IC 2 A Ptot W TC=25 30

NPN R 3DD3040 A6 3DD3040 A6 NPN VCEO 450 V IC 2 A Ptot W TC=25 50

NPN R 3DD3020 A4 3DD3020 A4 NPN VCEO 450 V IC 1.5 A Ptot Tc=25 30 W

NPN R 3DD3020 A6 3DD3020 A6 NPN VCEO 450 V IC 1.5 A Ptot Tc=25 50 W

NPN R 3DD3320 AN 3DD3320 AN NPN VCEO 400 V IC 15 A Ptot TC=25 120 W

NPN R 3DD3040 A7 3DD3040 A7 NPN VCEO 450 V IC 2 A Ptot W TC=25 50

NPN R 3DD3320 AN 3DD3320 AN NPN VCEO 400 V IC 15 A Ptot TC=25 120 W

NPN R 3DD3040 A6 3DD3040 A6 NPN VCEO 450 V IC 2 A Ptot W TC=25 50

NPN R 3DD3145 A6 3DD3145 A6 NPN VCEO 600 V IC 1.3 A Ptot W TC=25 50

NPN R 3DD3040 A1 3DD3040 A1-H NPN VCEO 450 V IC 2 A Ptot Ta=25 0.8 W

NPN R 3DD3040 A7 3DD3040 A7 NPN VCEO 450 V IC 2 A Ptot W TC=25 50

NPN R 3DD3145 A8 3DD3145 A8 NPN VCEO 700 V IC 1.3 A Ptot W TC=25 60

NPN R 3DD3020 A6 3DD3020 A6 NPN VCEO 450 V IC 1.5 A Ptot Tc=25 50 W

NPN R 3DD3020 A3 3DD3020 A3 NPN VCEO 450 V IC 1.5 A Ptot Tc=25 30 W

NPN R 3DD3020 A3 3DD3020 A3 NPN VCEO 450 V IC 1.5 A Ptot Tc=25 30 W

3DD3055(2N3055) NPN A B C D E F PCM TC=25 100 W ICM 15 A Tjm 175 Tstg -55~150 VCE=10V Rth 1.5 /W IC=3A V(BR)CBO ICB=5mA 80 150 200 250 350 400 V V(BR)CEO ICE=5mA 50 100 150 200 250 300 V V(BR)EBO IEB=5mA 5.0 V ICBO VCB=50V

LJ2015-463DD31CT4 NPN P T =25 1 Wtot AI 3 ACI 5 ACMT 150 jmT -55~150 stgV I =1mA 100 V(BR)CBO CBV I =1mA 100 V(BR)CEO CEV I =1mA 5.0 V(BR)EBO EBI V =60V 50 ACEO CBI V =5V 0.1 mAEBO CEI =3ACV 1.2 VC

2SC3150A(3DD3150A) NPN /SILICON NPN TRANSISTOR : Purpose: Switching regulator applications. : Features: High V , high speed switching, wide ASO. CEO/Absolute maximum ratings(Ta=25) Symbol Rating Unit V 1000 V CBO V 750 V

2SC3853(3DD3853) NPN /SILICON NPN TRANSISTOR Application: Applications for pillow distortion adjustment for Color TV and low voltage adjustment . : Features: Low Saturation VoltageExcellent DC current characteristics /Absolute maximum ra

TIP31(3DD31) NPN /SILICON NPN TRANSISTOR : Purpose: Medium power linear switching applications. : TIP32(3CD32) Features: Complement to TIP32(3CD32). /Absolute maximum ratings(Ta=25) Symbol Rating Unit Symbol RatingUnitTIP31 40 V 5.

TIP31(3DD31) NPN /SILICON NPN TRANSISTOR : Purpose: Medium power linear switching applications. : TIP32(3CD32) Features: Complement to TIP32(3CD32). /Absolute maximum ratings(Ta=25) Symbol Rating Unit Symbol RatingUnitTIP31 40 V 5.

2SD313(3DD313) NPN /SILICON NPN TRANSISTOR : Purpose: Low frequency power amplifier applications. /Absolute maximum ratings(Ta=25) Symbol Rating Unit V 60 V CBO V 60 V CEO V 5.0 V EBO I 3.0 A C I 8.0 A CPP (T =25) 1.75 W C a P (T =25) 30 W C CT 150

TIP31(3DD31) NPN /SILICON NPN TRANSISTOR : Purpose: Medium power linear switching applications. : TIP32(3CD32) Features: Complement to TIP32(3CD32). /Absolute maximum ratings(Ta=25) Symbol Rating Unit Symbol RatingUnitTIP31 40 V 5.

TIP31(3DD31) NPN /SILICON NPN TRANSISTOR : Purpose: Medium power linear switching applications. : TIP32(3CD32) Features: Complement to TIP32(3CD32). /Absolute maximum ratings(Ta=25) Symbol Rating Unit Symbol RatingUnitTIP31 40 V 5.

RNPN 3DD3040 A3 3DD3040 A3 NPN VCEO 450 V IC 2 A Ptot TC=25 30 W

isc Silicon NPN Power Transistor 3DD303ADESCRIPTIONCollector-Emitter Breakdown Voltage-: V = 40V(Min)(BR)CEOCollector-Emitter Saturation Voltage-: V = 1.5V(Max) @I = 3ACE(sat) CMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for B/W TV vertical output applications.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL

isc Silicon NPN Power Transistor 3DD301DDESCRIPTIONCollector-Emitter Breakdown Voltage-: V = 150V(Min)(BR)CEOCollector-Emitter Saturation Voltage-: V = 1.5V(Max) @I = 3ACE(sat) CMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for B/W TV vertical output applications.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL

isc Silicon NPN Power Transistor 3DD303BDESCRIPTIONCollector-Emitter Breakdown Voltage-: V = 60V(Min)(BR)CEOCollector-Emitter Saturation Voltage-: V = 0.6V(Max) @I = 0.5ACE(sat) CMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for B/W TV vertical output applications.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBO

isc Silicon NPN Power Transistor 3DD301CDESCRIPTIONCollector-Emitter Breakdown Voltage-: V = 100V(Min)(BR)CEOCollector-Emitter Saturation Voltage-: V = 2.0V(Max) @I = 3ACE(sat) CMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for B/W TV vertical output applications.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL

isc Silicon NPN Power Transistor 3DD301BDESCRIPTIONCollector-Emitter Breakdown Voltage-: V = 50V(Min)(BR)CEOCollector-Emitter Saturation Voltage-: V = 2.0V(Max) @I = 3ACE(sat) CMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for B/W TV vertical output applications.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL

isc Silicon NPN Power Transistor 3DD3997DESCRIPTIONHigh Switching SpeedHigh Breakdown Voltage-: V = 1200V(Min)(BR)CBO100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operation.APPLICATIONSHigh frequency switching power supplyHigh frequency power transformCommonly power amplifier circuitABSOLUTE MAXIMUM RATINGS(T

isc Silicon NPN Power Transistor 3DD303CDESCRIPTIONCollector-Emitter Breakdown Voltage-: V = 100V(Min)(BR)CEOCollector-Emitter Saturation Voltage-: V = 1.5V(Max) @I = 3ACE(sat) CMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for B/W TV vertical output applications.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL