3DD3. Аналоги и основные параметры
Наименование производителя: 3DD3
Тип материала: Si
Полярность: NPN
Предельные значения
Максимальная рассеиваемая мощность (Pc): 5 W
Макcимально допустимое напряжение коллектор-база (Ucb): 50 V
Макcимально допустимое напряжение коллектор-эмиттер (Uce): 30 V
Макcимально допустимое напряжение эмиттер-база (Ueb): 5 V
Макcимальный постоянный ток коллектора (Ic): 1 A
Предельная температура PN-перехода (Tj): 175 °C
Электрические характеристики
Статический коэффициент передачи тока (hFE): 15
Корпус транзистора: TO276AB
TO220
TO257
Аналоги (замена) для 3DD3
- подборⓘ биполярного транзистора по параметрам
3DD3 даташит
0.1. Size:245K lge
3dd3853.pdf 
3DD3853(NPN) TO-220F Bipolar Transistors TO-220F 1. BASE 2. COLLECTOR 3. EMITTE 1 2 3 Features High Current Gain Saturation Voltage Low Power dissipation PCW 2 W (Tamb=25 ) 25 W (Tcase=25 ) MAXIMUM RATINGS (TA=25 unless otherwise noted) Dimensions in inches and (millimeters) Symbol Parameter Value Units VCBO Collector-Base Voltage 60 V VCEO Collect
0.2. Size:460K lge
3dd3852.pdf 
3DD3852(NPN) TO-220F Bipolar Transistors TO-220F 1. BASE 2. COLLECTOR 3. EMITTE 1 2 3 Features High Current Gain Saturation Voltage Low Power dissipation PCW 2 W (Tamb=25 ) 25 W (Tcase=25 ) Dimensions in inches and (millimeters) MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base Voltage 80 V VCEO Collector-
0.4. Size:550K jilin sino
3dd3997.pdf 
NPN HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR R 3DD3997 MAIN CHARACTERISTICS Package I 30A C V 800V CEO P (TO-3P LH ) 250W C APPLICATIONS High frequency switching power supply High frequency power transform Commo
0.7. Size:178K crhj
3dd3015a1.pdf 
NPN R 3DD3015 A1 3DD3015 A1 NPN VCEO 450 V IC 1.2 A Ptot Ta=25 0.8 W
0.12. Size:178K crhj
3dd3015 a1.pdf 
NPN R 3DD3015 A1 3DD3015 A1 NPN VCEO 450 V IC 1.2 A Ptot Ta=25 0.8 W
0.19. Size:150K crhj
3dd3020 a6.pdf 
NPN R 3DD3020 A6 3DD3020 A6 NPN VCEO 450 V IC 1.5 A Ptot Tc=25 50 W
0.28. Size:150K crhj
3dd3020a6.pdf 
NPN R 3DD3020 A6 3DD3020 A6 NPN VCEO 450 V IC 1.5 A Ptot Tc=25 50 W
0.31. Size:151K china
3dd3055.pdf 
3DD3055(2N3055) NPN A B C D E F PCM TC=25 100 W ICM 15 A Tjm 175 Tstg -55 150 VCE=10V Rth 1.5 /W IC=3A V(BR)CBO ICB=5mA 80 150 200 250 350 400 V V(BR)CEO ICE=5mA 50 100 150 200 250 300 V V(BR)EBO IEB=5mA 5.0 V ICBO VCB=50V
0.32. Size:103K china
3dd31ct4.pdf 
LJ2015-46 3DD31CT4 NPN P T =25 1 W tot A I 3 A C I 5 A CM T 150 jm T -55 150 stg V I =1mA 100 V (BR)CBO CB V I =1mA 100 V (BR)CEO CE V I =1mA 5.0 V (BR)EBO EB I V =60V 50 A CEO CB I V =5V 0.1 mA EBO CE I =3A C V 1.2 V C
0.33. Size:346K lzg
3dd3150a.pdf 
2SC3150A(3DD3150A) NPN /SILICON NPN TRANSISTOR Purpose Switching regulator applications. Features High V , high speed switching, wide ASO. CEO /Absolute maximum ratings(Ta=25 ) Symbol Rating Unit V 1000 V CBO V 750 V
0.34. Size:251K lzg
3dd3853.pdf 
2SC3853(3DD3853) NPN /SILICON NPN TRANSISTOR Application Applications for pillow distortion adjustment for Color TV and low voltage adjustment . Features Low Saturation Voltage Excellent DC current characteristics /Absolute maximum ra
0.35. Size:138K lzg
3dd31a.pdf 
TIP31(3DD31) NPN /SILICON NPN TRANSISTOR Purpose Medium power linear switching applications. TIP32(3CD32) Features Complement to TIP32(3CD32). /Absolute maximum ratings(Ta=25 ) Symbol Rating Unit Symbol Rating Unit TIP31 40 V 5.
0.36. Size:138K lzg
3dd31.pdf 
TIP31(3DD31) NPN /SILICON NPN TRANSISTOR Purpose Medium power linear switching applications. TIP32(3CD32) Features Complement to TIP32(3CD32). /Absolute maximum ratings(Ta=25 ) Symbol Rating Unit Symbol Rating Unit TIP31 40 V 5.
0.37. Size:358K lzg
3dd313.pdf 
2SD313(3DD313) NPN /SILICON NPN TRANSISTOR Purpose Low frequency power amplifier applications. /Absolute maximum ratings(Ta=25 ) Symbol Rating Unit V 60 V CBO V 60 V CEO V 5.0 V EBO I 3.0 A C I 8.0 A CP P (T =25 ) 1.75 W C a P (T =25 ) 30 W C C T 150
0.38. Size:138K lzg
3dd31b.pdf 
TIP31(3DD31) NPN /SILICON NPN TRANSISTOR Purpose Medium power linear switching applications. TIP32(3CD32) Features Complement to TIP32(3CD32). /Absolute maximum ratings(Ta=25 ) Symbol Rating Unit Symbol Rating Unit TIP31 40 V 5.
0.39. Size:138K lzg
3dd31c.pdf 
TIP31(3DD31) NPN /SILICON NPN TRANSISTOR Purpose Medium power linear switching applications. TIP32(3CD32) Features Complement to TIP32(3CD32). /Absolute maximum ratings(Ta=25 ) Symbol Rating Unit Symbol Rating Unit TIP31 40 V 5.
0.41. Size:200K inchange semiconductor
3dd303a.pdf 
isc Silicon NPN Power Transistor 3DD303A DESCRIPTION Collector-Emitter Breakdown Voltage- V = 40V(Min) (BR)CEO Collector-Emitter Saturation Voltage- V = 1.5V(Max) @I = 3A CE(sat) C Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for B/W TV vertical output applications. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL
0.42. Size:201K inchange semiconductor
3dd301d.pdf 
isc Silicon NPN Power Transistor 3DD301D DESCRIPTION Collector-Emitter Breakdown Voltage- V = 150V(Min) (BR)CEO Collector-Emitter Saturation Voltage- V = 1.5V(Max) @I = 3A CE(sat) C Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for B/W TV vertical output applications. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL
0.43. Size:201K inchange semiconductor
3dd303b.pdf 
isc Silicon NPN Power Transistor 3DD303B DESCRIPTION Collector-Emitter Breakdown Voltage- V = 60V(Min) (BR)CEO Collector-Emitter Saturation Voltage- V = 0.6V(Max) @I = 0.5A CE(sat) C Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for B/W TV vertical output applications. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBO
0.44. Size:201K inchange semiconductor
3dd301c.pdf 
isc Silicon NPN Power Transistor 3DD301C DESCRIPTION Collector-Emitter Breakdown Voltage- V = 100V(Min) (BR)CEO Collector-Emitter Saturation Voltage- V = 2.0V(Max) @I = 3A CE(sat) C Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for B/W TV vertical output applications. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL
0.45. Size:202K inchange semiconductor
3dd301b.pdf 
isc Silicon NPN Power Transistor 3DD301B DESCRIPTION Collector-Emitter Breakdown Voltage- V = 50V(Min) (BR)CEO Collector-Emitter Saturation Voltage- V = 2.0V(Max) @I = 3A CE(sat) C Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for B/W TV vertical output applications. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL
0.46. Size:212K inchange semiconductor
3dd3997.pdf 
isc Silicon NPN Power Transistor 3DD3997 DESCRIPTION High Switching Speed High Breakdown Voltage- V = 1200V(Min) (BR)CBO 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation. APPLICATIONS High frequency switching power supply High frequency power transform Commonly power amplifier circuit ABSOLUTE MAXIMUM RATINGS(T
0.47. Size:206K inchange semiconductor
3dd303c.pdf 
isc Silicon NPN Power Transistor 3DD303C DESCRIPTION Collector-Emitter Breakdown Voltage- V = 100V(Min) (BR)CEO Collector-Emitter Saturation Voltage- V = 1.5V(Max) @I = 3A CE(sat) C Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for B/W TV vertical output applications. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL
Другие транзисторы: 3DD259, 3DD260, 3DD262, 3DD264, 3DD2655, 3DD267, 3DD271, 3DD275, 9014, 3DD3015A1, 3DD3015A3, 3DD3020A3, 3DD3020A4, 3DD3020A6, 3DD3040A1, 3DD3040A3, 3DD3040A4
